GB/T 45719-2025 English PDF

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GB/T 45719-2025: Semiconductor devices - Hot carrier test on metal-oxide semiconductor (MOS) transistors
Status: Valid

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Basic data

Standard ID: GB/T 45719-2025 (GB/T45719-2025)
Description (Translated English): Semiconductor devices - Hot carrier test on metal-oxide semiconductor (MOS) transistors
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L40
Classification of International Standard: 31.080.01
Word Count Estimation: 14,172
Date of Issue: 2025-05-30
Date of Implementation: 2025-09-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 45719-2025: Semiconductor devices - Hot carrier test on metal-oxide semiconductor (MOS) transistors

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.080.01 CCSL40 National Standard of the People's Republic of China Semiconductor Device Metal Oxide Semiconductor (MOS) Hot carrier testing of transistors transistors transistors,IDT) Released on 2025-05-30 2025-09-01 Implementation State Administration for Market Regulation The National Standardization Administration issued

Table of contents

Preface III 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Symbols and abbreviations 1 5 Test Structure 2 6 Stress time 2 7 Stress conditions 2 8 Sample size 3 9 Temperature 3 10 Failure criteria 3 11 Lifetime Assessment Method 3 12 Lifetime requirements 4 13 Report 4 References 6

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting. This document is equivalent to IEC 62416.2010 "Hot carrier test for MOS transistors in semiconductor devices". This document adds two chapters. “Normative References” and “Terms and Definitions”. The following minimal editorial changes were made to this document. --- In order to coordinate with the existing standards, the name of the standard is changed to "Thermal Carrier Experiment. Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This document was drafted by. the Fifth Electronic Research Institute of the Ministry of Industry and Information Technology, Xidian University, National University of Defense Technology, Hebei Beixin Semiconductor Conductor Technology Co., Ltd. and the 58th Electronic Research Institute of China Electronics Technology Group Corporation. The main drafters of this document are. Lu Guoguang, Zhang Xiaowen, Lin Xiaoling, You Hailong, Yang Shaohua, Peng Chao, Xiao Qingzhong, Wei Qinru, Lai Ping, Liang Bin, Zhang Kui, Zhao Wenbin, and Jin Lihua. Semiconductor Device Metal Oxide Semiconductor (MOS) Hot carrier testing of transistors

1 Scope

This document describes a hot carrier test method for NMOS and PMOS transistors at the wafer level. The purpose of this test is to determine the Whether the individual transistors in the process meet the required lifetime of hot carrier injection effects.

2 Normative references

This document has no normative references.

3 Terms and definitions

There are no terms or definitions that require definition in this document.

4 Symbols and abbreviations

The following symbols and abbreviations apply to this document. (C)MOS. Complementary MOS. gm(μA/V). transconductance of MOS transistor. gm,max(μA/V). Maximum transconductance of MOS transistor. gm,max(MOST). gm,max(L=W) of square MOS transistor. Ib (μA). substrate current of MOS transistor. Ids(μA). drain-source current of MOS transistor. Ids,sat (μA). saturated drain-source current when Vgs = Vds = Vds,use_max; measured without changing the source and drain during stress. Ids,sat_forward is measured, and Ids,sat_reverse is measured under the condition of changing the positions of the source and drain. Ig(nA). Gate current of MOS transistor. L(μm). The length of the gate of a MOS transistor. L(MOST). The length of a square MOS transistor (L=W). Leff (μm). The effective electrical channel length of a MOS transistor. For a given channel length L, Leff is determined by the large square MOS transistor. gm,max is determined (W=L≫Lnominal). Lnominal (μm). The minimum length allowed by process design rules. MOS. Metal Oxide Semiconductor. NMOS. n-channel MOS transistor. PMOS. p-channel MOS transistor. τ(s)Τ. Lifetime of MOS transistor. Vbs(V). Body-source voltage of MOS transistor. Vds(V). drain-source voltage of MOS transistor. Vgs(V). Gate-source voltage of MOS transistor. ......

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