GB/T 44797-2025 English PDF

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GB/T 44797-2025: Microwave hybrid integrated circuits - Synthesized frequency sources
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 44797-2025	279	Add to Cart	3 days	Microwave hybrid integrated circuits - Synthesized frequency sources	Valid

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Basic data

Standard ID: GB/T 44797-2025 (GB/T44797-2025)
Description (Translated English): Microwave hybrid integrated circuits - Synthesized frequency sources
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L57
Classification of International Standard: 31.200
Word Count Estimation: 14,130
Date of Issue: 2025-01-24
Date of Implementation: 2025-01-24
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 44797-2025: Microwave hybrid integrated circuits - Synthesized frequency sources

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.200 CCSL57 National Standard of the People's Republic of China Microwave Hybrid Integrated Circuit Synthesized Frequency Source Released on 2025-01-24 2025-01-24 Implementation State Administration for Market Regulation The National Standardization Administration issued

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting. Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Technical Committee for Integrated Circuit Standardization (SAC/TC599). This document was drafted by. China Electronics Technology Group Corporation No. 13 Research Institute, China Electronics Technology Standardization Institute, Hefei Baodong Power Technology Co., Ltd., Anhui Songling Electric Co., Ltd., Shenzhen Jinhongxing Technology Co., Ltd., Shandong Zhongzhike Standardization Research Institute Co., Ltd., Anhui Dayan Semiconductor Technology Co., Ltd. The main drafters of this document are. Zhu Dacheng, Guo Wensheng, Jiang Xudong, Zhang Jiacheng, Wang Qi, Chen Lingling, Cui Congjun and Wu Xianbin. Microwave Hybrid Integrated Circuit Synthesized Frequency Source

1 Scope

This document specifies the definition, technical requirements, inspection rules and markings of synthetic frequency sources and describes the test methods. This document applies to synthetic frequency sources designed and manufactured using microwave hybrid integrated circuit technology.

2 Normative references

The contents of the following documents constitute the essential clauses of this document through normative references in this document. For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document. GB/T 2423.1-2008 Environmental testing for electric and electronic products Part 2.Test methods Test A. Low temperature GB/T 2423.2-2008 Environmental testing for electric and electronic products Part 2.Test methods Test B. High temperature GB/T 4937.3-2012 Mechanical and climatic test methods for semiconductor devices Part 3.External visual inspection GB/T 4937.21-2018 Mechanical and climatic test methods for semiconductor devices Part 21.Solderability GB/T 8976-1996 General specification for thin-film integrated circuits and hybrid thin-film integrated circuits GB/T 9178-1988 Integrated Circuit Terminology GB/T 11498-2018 Semiconductor device integrated circuits Part 21.Sectional specification for film integrated circuits and hybrid film integrated circuits (Use the Identification and Approval Process) GB/T 13062-2018 Semiconductor device integrated circuits Part 21-1.Film integrated circuits and hybrid film integrated circuits Blank Detailed Specifications (using the Approval Procedure) GB/T 35002-2018 Microwave circuit frequency source test method

3 Terms and definitions

The terms and definitions defined in GB/T 9178-1988 and the following apply to this document. 3.1 The frequency source generated by frequency synthesis technology is to obtain a large number of frequencies that are similar to the reference base frequency by performing some mathematical operations on the reference base frequency. The signal with the same accuracy of the standard frequency can be obtained, and then the required frequency can be selected according to actual needs. Note. Synthetic frequency sources are mainly divided into three types according to different synthesis principles. direct synthetic frequency source, phase-locked synthetic frequency source, and direct digital synthetic frequency source.

4 Parameter classification and characteristic requirements

4.1 Static parameters The static parameters of the synthesized frequency source should include the supply current. 4.2 Dynamic Parameters The dynamic parameter indicators of the synthetic frequency source are as follows. ......

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