GB/T 4326-2006 English PDF

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GB/T 4326-2006: Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Status: Valid

GB/T 4326: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 4326-2006	419	Add to Cart	3 days	Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient	Valid
GB/T 4326-1984	519	Add to Cart	4 days	Extrinsic semiconductor single crystals--Measurement of Hall mobility and Hall coefficient	Obsolete

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Basic data

Standard ID: GB/T 4326-2006 (GB/T4326-2006)
Description (Translated English): Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H17
Classification of International Standard: 77.040.01
Word Count Estimation: 16,170
Date of Issue: 2006-07-18
Date of Implementation: 2006-11-01
Older Standard (superseded by this standard): GB/T 4326-1984
Adopted Standard: ASTM F76, NEQ
Regulation (derived from): China National Standard Approval Announcement 2006 No.8 (Total No.95)
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard applies to the measurement of single crystal semiconductor material extrinsic Hall coefficient, carrier Hall mobility, resistivity and carrier concentration. Measurement methods specified in this standard only within a limited range of germanium, silicon, gallium arsenide and gallium phosphide single crystal materials laboratory side volume, but the method is also applicable to other semiconductor single crystal materials, under normal circumstances for high resistivity at room temperature of the semiconductor single crystal material 10 �� cm test.

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