GB/T 1558-2023 English PDF

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GB/T 1558-2023: Test method for substitutional carbon content in silicon by infrared absorption
Status: Valid

GB/T 1558: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 1558-2023	209	Add to Cart	3 days	Test method for substitutional carbon content in silicon by infrared absorption	Valid
GB/T 1558-2009	319	Add to Cart	3 days	Test method for substitutional atomic carbon content of silicon by infrared absorption	Obsolete
GB/T 1558-1997	319	Add to Cart	3 days	Test method for substitutional atomic carbon content of silicon by infrared absorption	Obsolete
GB 1558-1983	199	Add to Cart	2 days	The method of determining substitutional carbon content in silicon by infrared absorption	Obsolete

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Basic data

Standard ID: GB/T 1558-2023 (GB/T1558-2023)
Description (Translated English): Test method for substitutional carbon content in silicon by infrared absorption
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H17
Classification of International Standard: 77.040
Word Count Estimation: 10,143
Date of Issue: 2023-12-28
Date of Implementation: 2024-07-01
Older Standard (superseded by this standard): GB/T 1558-2009
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 1558-2023: Test method for substitutional carbon content in silicon by infrared absorption

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77:040 CCSH17 National Standards of People's Republic of China Replace GB/T 1558-2009 Infrared absorption test method for substituted carbon content in silicon Published on 2023-12-28 2024-07-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Foreword

This document complies with the provisions of GB/T 1:1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting: This document replaces GB/T 1558-2009 "Infrared absorption measurement method for substituted carbon atom content in silicon": With GB/T 1558-2009 In comparison, in addition to structural adjustments and editorial changes, the main technical changes are as follows: a) Changed the scope (see Chapter 1, Chapter 1 of the:2009 edition); b) Changes in terms and definitions (see Chapter 3, Chapter 3 of the:2009 edition); c) The method principle has been changed (see Chapter 4, Chapter 4 of the:2009 edition); d) The content of interference factors has been changed (see 5:2, 5:3, 5:4, 5:6, 5:2, 5:3, 5:4, 5:6 of the:2009 version), and the content of interference factors has been added: Capacity (see 5:8, 5:9, 5:10, 5:11, 5:12, 5:13); e) Added test conditions (see Chapter 6); f) The requirements for instruments and equipment have been changed (see 7:2, 6:2 of the:2009 version), and the requirements for "window materials" and "thermometers" have been deleted (see:2009 version Version 6:4, 6:5); g) The sample has been changed (see Chapter 8, Chapter 7 of the:2009 edition); h) The test procedures have been changed (see Chapter 9, Chapter 8 of the:2009 edition); i) Changed the precision (see Chapter 11, Chapter 10 of the:2009 edition); j) The test report has been changed (see Chapter 12, Chapter 11 of the:2009 edition); k) Added Appendix A (see Appendix A): Please note that some content in this document may be subject to patents: The publisher of this document assumes no responsibility for identifying patents: This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards It was jointly proposed and coordinated by the Materials Branch of the Chemistry Technical Committee (SAC/TC203/SC2): This document was drafted by: China Electronics Technology Group Corporation No: 46 Research Institute, Qinghai Xincei Technology Co:, Ltd:, Tianjin Zhonghuan Leading Materials Technology Co:, Ltd:, Zhejiang Jinruihong Technology Co:, Ltd:, Shandong Youyan Semiconductor Materials Co:, Ltd:, Zhejiang Haina Semiconductor Co:, Ltd: Co:, Ltd:, Bruker (Beijing) Technology Co:, Ltd:, China Institute of Metrology, Nonferrous Metals Technology and Economic Research Institute Co:, Ltd:, Kai Huaxian Inspection and Testing Institute, Sichuan Yongxiang New Energy Co:, Ltd:, Asia Silicon Industry (Qinghai) Co:, Ltd:, Xinjiang Xinte New Energy Material Inspection Testing Center Co:, Ltd:, Shaanxi Nonferrous Tianhongruike Silicon Materials Co:, Ltd:, China Jinghua (Tianjin) Semiconductor Materials Co:, Ltd:, Zhejiang Zhongjing Electronics Co:, Ltd:, Yiwu Limai New Materials Co:, Ltd:, Hunan Sanan Semiconductor Co:, Ltd: The main drafters of this document: Li Jing, He Xuankun, Liu Lina, Li Suqing, Suo Kainan, Ma Chunxi, Xue Xinlu, Zhang Xuenna, Zhang Haiying, Sun Yunzhe, Wang Yanjun, Shen Yijun, Zhao Yue, Wang Junfeng, Li Lanlan, Zou Jianqiu, Xu Shunbo, Li Shouqin, Zhang Baoshun, Liu Guoxia, Xu Yan, Li Mingda, Lu Yong, Pi Kunlin, Du Weihua: This document was first published in 1979, revised for the first time in:1997, revised for the second time in:2009, and this is the third revision: Infrared absorption test method for substituted carbon content in silicon

1 Scope

This document describes the infrared absorption test method for the content of substituted carbon atoms in silicon: This document is applicable to p-type silicon single-crystal wafers with a resistivity greater than 3Ω·cm and n-type silicon single-crystal wafers with a resistivity greater than 1Ω·cm: Test of carbon atom content (test range at room temperature: 5×1015cm-3 to the maximum solid solubility of carbon atoms in silicon; measured when the temperature is lower than 80K Test range: not less than 5×1014cm-3):

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text: Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document: GB/T 8170 Numerical rounding rules and expression and determination of limit values GB/T 8322 Molecular absorption spectrometry terminology GB/T 14264 Semiconductor material terminology GB/T 29057 Procedure for evaluating polycrystalline silicon rods using zone melting crystal pulling method and spectral analysis method GB/T 35306 Determination of carbon and oxygen content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy

3 Terms and definitions

The terms and definitions defined in GB/T 14264 and GB/T 8322 and the following apply to this document: 3:1 backgroundspectrum backgroundspectrum In an infrared spectrometer, a single beam is used to measure the spectral lines obtained without the presence of a sample: Note: Usually includes nitrogen, air and other information: 3:2 baselinebaseline Tangents taken from the minimum absorbance points on either side of the carbon peak in the test spectrum: 3:3 baselineabsorbance The baseline value at the wavenumber corresponding to the carbon peak from which the absorption peak height is calculated: 3:4 referencespectrum Spectrum of the reference sample: Note: When testing with a double-beam spectrometer, place the reference sample in the sample optical path and obtain the result when the reference optical path is empty; when testing with a Fourier transform infrared spectrometer and a single When using a beam spectrometer, the spectrum is obtained by subtracting the background spectrum from the spectrum of the reference sample: 3:5 sample spectrum samplespectrum Spectrum of the test sample: ......

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