GB/T 42709.7-2023 English PDF

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GB/T 42709.7-2023: Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 42709.7-2023	494	Add to Cart	5 days	Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection	Valid

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SJ/T 11281   GB/T 18910.2   GB/T 42706.2   GB/T 42706.5   GB/T 42709.19   

Basic data

Standard ID: GB/T 42709.7-2023 (GB/T42709.7-2023)
Description (Translated English): Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L40
Classification of International Standard: 31.200
Word Count Estimation: 26,295
Date of Issue: 2023-05-23
Date of Implementation: 2023-12-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 42709.7-2023: Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31:200 CCSL40 National Standards of People's Republic of China Semiconductor Devices Micro-Electro-Mechanical Devices Part 7: For radio frequency control and selection MEMS Bulk Acoustic Wave Filters and Diplexers (IEC 62047-7:2011, IDT) Released on 2023-05-23 2023-12-01 Implementation State Administration for Market Regulation Released by the National Standardization Management Committee

table of contents

Preface I Introduction II 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 3:1 Basic terms 1 3:2 BAW Filter Terminology 2 3:3 Bulk Acoustic Wave Duplexer Terminology 3 3:4 Terminology of characteristic parameters 4 4 Basic ratings and characteristics 10 4:1 Resonator, filter and duplexer notation 10 4:2 Other information 10 5 Test method 10 5:1 Test Step 10 5:2 Radio frequency characteristics 12 5:3 Reliability test method 15 Appendix A (Informative) Geometry of BAW Resonators 17 Appendix B (informative) Working principle of bulk acoustic wave resonator 18 Reference 20

foreword

This document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents" drafting: This document is Part 7 of GB/T 42709 "Microelectronic Mechanical Devices for Semiconductor Devices": GB/T 42709 has been issued with Lower part: --- Part 5: RF MEMS switches; --- Part 7: MEMS bulk acoustic wave filters and duplexers for radio frequency control and selection; --- Part 19: Electronic compass: This document is equivalent to IEC 62047-7:2011 "Microelectronic Mechanical Devices for Semiconductor Devices Part 7: For RF Control and Selection Selected MEMS Bulk Acoustic Wave Filters and Diplexers": The following minimal editorial changes have been made to this document: ---According to the textual description of formula (3) in IEC 62047-7:2011, modify the denominator of formula (3) from parallel resonance frequency to series joint resonant frequency: Please note that some contents of this document may refer to patents: The issuing agency of this document assumes no responsibility for identifying patents: This document is proposed and managed by the Ministry of Industry and Information Technology of the People's Republic of China: This document is drafted by: China Institute of Electronics Standardization, China Electronic Information Industry Group Co:, Ltd:, Hebei Mattel Electronics Division Technology Co:, Ltd:, Peking University, Beijing Bichuang Technology Co:, Ltd:, Tianjin University: The main drafters of this document: Liu Ruobing, Li Bo, Cui Bo, Liang Yanqing, Zhang Wei, Chen Demin, Yang Qingrui:

Introduction

This document is applicable to MEMS bulk acoustic wave resonators, filters and duplexers: The terms, definitions, symbols, structures, and test methods of industrial equipment are helpful to better guide practitioners in related industries in product development, testing, and testing: Use etc: to work: GB/T 42709 "Microelectronic Mechanical Devices for Semiconductor Devices" is proposed to consist of the following parts: --- Part 2: Tensile test methods for film materials: The purpose is to specify the tensile test method for MEMS thin film materials: --- Part 3: Film standard test piece for tensile test: The purpose is to specify test pieces for tensile testing of MEMS thin film materials related requirements: --- Part 5: RF MEMS switches: The purpose is to specify the term definitions, characteristic requirements, and testing methods of RF MEMS switches: law etc: --- Part 6: Thin film material axial fatigue test method: The purpose is to specify the axial fatigue test of MEMS thin film materials method: --- Part 7: MEMS bulk acoustic wave filters and duplexers for radio frequency control and selection: The purpose is to specify the MEMS body Definition of terms, characteristic requirements, test methods, etc: of acoustic wave resonators, filters and duplexers: --- Part 8: Strip bending test method for the measurement of film tensile properties: The purpose is to specify the method used to measure the tensile properties of films Strip bend test method: --- Part 9: MEMS wafer bonding strength test method: The purpose is to specify the bonding strength test method for MEMS wafers: --- Part 11: Test method for linear thermal expansion coefficient of suspended MEMS materials: The purpose is to specify the Test method for coefficient of linear thermal expansion: --- Part 12: Flexural fatigue test method for thin film materials using MEMS structural resonance method: The purpose is to specify MEMS thin Membrane material flexural fatigue test method: --- Part 13: MEMS structure adhesion strength test method: The purpose is to specify the adhesion strength test of MEMS structure method: --- Part 16: Wafer curvature and cantilever beam deflection test method for MEMS film residual stress: The purpose is to stipulate Two test methods of wafer curvature and cantilever beam deflection for MEMS film residual stress: --- Part 19: Electronic compass: The purpose is to specify the term definitions, characteristic requirements, test methods, etc: of the electronic compass: --- Part 21: MEMS thin film material Poisson's ratio test method: The purpose is to specify the Poisson's ratio test of MEMS thin film materials method: --- Part 22: Electromechanical tensile test methods for conductive films on flexible substrates: The purpose is to specify the characteristics of MEMS conductive thin film materials Tensile test method for electromechanical properties: --- Part 26: Description and test methods of micro-grooves and needle structures: The purpose is to specify the description of MEMS microgroove and needle structure description and test methods: --- Part 27: MCT test method for bond strength of glass fused structures: The purpose is to specify the bond strength of the glass frit structure Degree of MCT test method: --- Part 29: Test method for electromechanical relaxation of suspended conductive films at room temperature: The purpose is to specify the suspended conductance of MEMS devices Test method for electromechanical relaxation of electromechanical thin films at room temperature: --- Part 32: MEMS resonator nonlinear vibration test method: The purpose is to specify the nonlinear vibration of MEMS resonators performance testing method: --- Part 35: Test methods for electrical characteristics of flexible electromechanical devices bending deformation: The purpose is to specify the bending deformation of flexible electromechanical devices State electrical characteristics test method: --- Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric films: The purpose is to specify the MEMS piezoelectric film Environmental and dielectric withstand performance test methods: --- Part 38: Test method for adhesion strength of metal powder paste in MEMS interconnection: The purpose is to specify the gold in the MEMS interconnection It is a test method for the adhesion strength of powder paste: --- Part 40: MEMS inertial shock switch threshold test method: The purpose is to specify the threshold of MEMS inertial shock switch Test Methods: Semiconductor Devices Micro-Electro-Mechanical Devices Part 7: For radio frequency control and selection MEMS Bulk Acoustic Wave Filters and Diplexers

1 Scope

This document defines terms and definitions for MEMS bulk acoustic wave resonators, filters and diplexers for radio frequency control and selection, and gives Describes the basic ratings and characteristics, and describes the test methods used to evaluate and determine its performance: This document specifies the requirements for bulk acoustic wave resonators, filters Test methods and general requirements for duplexers for quality assessment of capability approval procedures or qualification approval procedures:

2 Normative references

This document has no normative references:

3 Terms and Definitions

The following terms and definitions apply to this document: 3:1 Basic terms 3:1:1 Bulk acoustic wave bulkacousticwave; BAW Sound waves propagating inside a solid: 3:1:2 Bulk Acoustic Wave Resonator BAWresonator Devices utilizing bulk acoustic resonance: NOTE: The bulk acoustic wave resonator consists of upper and lower electrodes and a piezoelectric material in the middle, as shown in Figure 1: The upper and lower electrodes can be in the vertical direction of the piezoelectric film vibration: The gas-solid interface of the two electrodes of the film bulk acoustic resonator (FBAR), or the two electrodes of the solid-state fabricated resonator (SMR) are the acoustic Bragg reflector and gas-solid interface: Description of index number: Electrode --- the connector for the piezoelectric film body to output charges to the external circuit; Piezoelectric film --- the main layer of the bulk acoustic wave resonator; AC Power --- Provides electrical excitation for the bulk acoustic wave resonator: Figure 1 Basic structure of bulk acoustic wave resonator ......

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