GB/T 42709.5-2023 English PDFUS$624.00 · In stock
Delivery: <= 6 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 42709.5-2023: Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches Status: Valid
Basic dataStandard ID: GB/T 42709.5-2023 (GB/T42709.5-2023)Description (Translated English): Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: L40 Classification of International Standard: 31.200 Word Count Estimation: 33,371 Date of Issue: 2023-05-23 Date of Implementation: 2023-09-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 42709.5-2023: Semiconductor devices - Micro-electromechanical devices - Part 5: RF MEMS switches---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. ICS 31:200 CCSL40 National Standards of People's Republic of China Semiconductor Devices Micro-Electro-Mechanical Devices Part 5: RF MEMS switches Part 5:RFMEMSswitches (IEC 62047-5:2011, IDT) Released on 2023-05-23 2023-09-01 implementation State Administration for Market Regulation Released by the National Standardization Management Committee table of contentsPreface III Introduction IV 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 3:1 Switching terminology 2 3:2 Switch Structure Terminology 2 3:3 Terminology of drive mode 2 3:4 Switch Network Structure Terminology 2 3:5 Reliability Terminology 3 3:6 Terminology of electrical characteristics 3 4 Basic ratings and characteristics 5 4:1 Identification and type description 5 4:2 Applications and Specifications 5 4:3 Limit values and operating conditions 5 4:4 DC and RF characteristics 6 4:5 Mechanical and environmental characteristics 6 4:6 Additional information 6 5 Test method 6 5:1 General 6 5:2 DC characteristics 7 5:3 Radio frequency characteristics 10 5:4 Switching characteristics 14 6 Reliability14 6:1 General 14 6:2 Life cycle 15 6:3 Temperature cycling 16 6:4 High temperature and high humidity test 16 6:5 Impact test 17 6:6 Vibration test 17 6:7 Electrostatic discharge susceptibility test 17 Appendix A (Informative) General Description of RF MEMS Switches 18 Appendix B (Informative) Geometry of RF MEMS Switches 19 Appendix C (Informative) Encapsulation of RF MEMS Switches 22 Appendix D (Informative) Failure Mechanism of RF MEMS Switches 23 Appendix E (Informative) Applications of RF MEMS Switches 24 Appendix F (Informative) Test Procedures for RF MEMS Switches 25 Appendix NA (informative) This document is compared with IEC 62047-5:2011 chapter number 26forewordThis document is in accordance with the provisions of GB/T 1:1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents" drafting: This document is part 5 of GB/T 42709 "Microelectronic Mechanical Devices for Semiconductor Devices": GB/T 42709 has been issued with Lower part: --- Part 5: RF MEMS switches; --- Part 7: MEMS bulk acoustic wave filters and duplexers for radio frequency control and selection; --- Part 19: Electronic compass: This document is equivalent to IEC 62047-5:2011 "Microelectronic Mechanical Devices for Semiconductor Devices Part 5: RF MEMS switch": The following minimal editorial changes have been made to this document: --- Incorporate the clauses involved in the contents of the IEC 62047-5:2011/Cor1:2012 errata: Double lines (‖) are marked: --- Added Appendix NA (informative): Please note that some contents of this document may refer to patents: The issuing agency of this document assumes no responsibility for identifying patents: This document is proposed and managed by the Ministry of Industry and Information Technology of the People's Republic of China: This document is drafted by: China Institute of Electronics Standardization, China Electronics Corporation, Peking University, Beijing Bi Chuang Technology Co:, Ltd:, Hebei Mattel Electronic Technology Co:, Ltd: The main drafters of this document: Liu Ruobing, Li Bo, Zhang Wei, Chen Demin, Cui Bo, Zhai Xiaofei:IntroductionThis document is applicable to RF MEMS switches, and specifies the terms, definitions, Symbols and parameter testing methods, etc:, are conducive to better guiding practitioners in related industries in product development, testing, and use: GB/T 42709 "Microelectronic Mechanical Devices for Semiconductor Devices" is proposed to consist of the following parts: --- Part 2: Tensile test methods for film materials: The purpose is to specify the tensile test method for MEMS thin film materials: --- Part 3: Film standard test piece for tensile test: The purpose is to specify test pieces for tensile testing of MEMS thin film materials related requirements: --- Part 5: RF MEMS switches: The purpose is to specify the term definitions, characteristic requirements, and testing methods of RF MEMS switches: law etc: --- Part 6: Thin film material axial fatigue test method: The purpose is to specify the axial fatigue test of MEMS thin film materials method: --- Part 7: MEMS bulk acoustic wave filters and duplexers for radio frequency control and selection: The purpose is to specify the MEMS body Definition of terms, characteristic requirements, test methods, etc: of acoustic wave resonators, filters and duplexers: --- Part 8: Strip bending test method for the measurement of film tensile properties: The purpose is to specify the method used to measure the tensile properties of films Strip bend test method: --- Part 9: MEMS wafer bonding strength test method: The purpose is to specify the bonding strength test method for MEMS wafers: --- Part 11: Test method for linear thermal expansion coefficient of suspended MEMS materials: The purpose is to specify the Test method for coefficient of linear thermal expansion: --- Part 12: Flexural fatigue test method for thin film materials using MEMS structural resonance method: The purpose is to specify MEMS thin Membrane material flexural fatigue test method: --- Part 13: MEMS structure adhesion strength test method: The purpose is to specify the adhesion strength test of MEMS structure method: --- Part 16: Wafer curvature and cantilever beam deflection test method for MEMS film residual stress: The purpose is to stipulate Two test methods of wafer curvature and cantilever beam deflection for MEMS film residual stress: --- Part 19: Electronic compass: The purpose is to specify the term definitions, characteristic requirements, test methods, etc: of the electronic compass: --- Part 21: MEMS thin film material Poisson's ratio test method: The purpose is to specify the Poisson's ratio test of MEMS thin film materials method: --- Part 22: Electromechanical tensile test methods for conductive films on flexible substrates: The purpose is to specify the characteristics of MEMS conductive thin film materials Tensile test method for electromechanical properties: --- Part 26: Description and test methods of micro-grooves and needle structures: The purpose is to specify the description of MEMS microgroove and needle structure description and test methods: --- Part 27: MCT test method for bond strength of glass fused structures: The purpose is to specify the bond strength of the glass frit structure Degree of MCT test method: --- Part 29: Test method for electromechanical relaxation of suspended conductive films at room temperature: The purpose is to specify the suspended conductance of MEMS devices Test method for electromechanical relaxation of electromechanical thin films at room temperature: --- Part 32: MEMS resonator nonlinear vibration test method: The purpose is to specify the nonlinear vibration of MEMS resonators performance testing method: --- Part 35: Test methods for electrical characteristics of flexible electromechanical devices bending deformation: The purpose is to specify the bending deformation of flexible electromechanical devices State electrical characteristics test method: --- Part 36: Environmental and dielectric withstand test methods for MEMS piezoelectric films: The purpose is to specify the MEMS piezoelectric film Environmental and dielectric withstand performance test methods: --- Part 38: Test method for adhesion strength of metal powder paste in MEMS interconnection: The purpose is to specify the gold in the MEMS interconnection It is a test method for the adhesion strength of powder paste: --- Part 40: MEMS inertial shock switch threshold test method: The purpose is to specify the threshold of MEMS inertial shock switch Test Methods: Semiconductor Devices Micro-Electro-Mechanical Devices Part 5: RF MEMS switches1 ScopeThis document defines the terms, definitions and symbols used to evaluate and determine the basic ratings and characteristics of RF MEMS switches, and describes Parameter test method: This document is applicable to various types of RF MEMS switches: See Appendix A for general descriptions of RF MEMS switches: by contact Classification, including DC contact type switch and capacitive contact type switch; classification by structure, including series switch and parallel switch, RF MEMS switch See Appendix B for the description of the geometric structure of the switch; according to the classification of the switch network, it includes single-pole single-throw switches, single-pole double-throw switches, and double-pole double-throw switches; Classification of drive methods, including electrostatic drive switches, thermoelectric drive switches, electromagnetic drive switches, and piezoelectric drive switches: RF MEMS Switches In multi-band or multi-mode mobile phones, smart radar systems, reconfigurable RF devices and systems, SDR (software defined radio) phones, test equipment It is widely used in equipment, tunable devices and systems, satellites, etc: For the application description of RF MEMS switches, see Appendix E:2 Normative referencesThe contents of the following documents constitute the essential provisions of this document through normative references in the text: Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document: GB/T 4937:12-2018 Mechanical and climatic test methods for semiconductor devices Part 12: Frequency sweep vibration (IEC 60749-12: 2002, IDT) GB/T 4937:27-2023 Mechanical and climatic test methods for semiconductor devices Part 27: Electrostatic discharge (ESD) susceptibility Test mechanical model (MM) (IEC 60749-27:2012, IDT) Note: GB/T 20870:1-2007 Semiconductor Devices Part 16-1: Microwave Integrated Circuit Amplifiers (IEC 60747-16-1:2001, IDT) IEC 60749-5:20171) Mechanical and climatic test methods for semiconductor devices Part 5: Steady-state temperature and humidity bias life test midity bias life test) 1) IEC 60749-5:2004 is replaced by the current version, and the referenced content has no technical difference: 2) IEC 60749-10:2002 is replaced by the current version, and the referenced content has no technical difference:3 Terms and DefinitionsThe following terms and definitions apply to this document: ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 42709.5-2023_English be delivered?Answer: Upon your order, we will start to translate GB/T 42709.5-2023_English as soon as possible, and keep you informed of the progress. 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