GB/T 41852-2022 English PDF

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GB/T 41852-2022: Semiconductor devices-Micro-electromechanical devices - Bend-and shear-type test methods of measuring adhesive strength for MEMS structures
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 41852-2022	244	Add to Cart	3 days	Semiconductor devices-Micro-electromechanical devices - Bend-and shear-type test methods of measuring adhesive strength for MEMS structures	Valid

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Basic data

Standard ID: GB/T 41852-2022 (GB/T41852-2022)
Description (Translated English): Semiconductor devices-Micro-electromechanical devices - Bend-and shear-type test methods of measuring adhesive strength for MEMS structures
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L55
Classification of International Standard: 31.080.99
Word Count Estimation: 14,129
Date of Issue: 2022-10-14
Date of Implementation: 2022-10-12
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 41852-2022: Semiconductor devices-Micro-electromechanical devices - Bend-and shear-type test methods of measuring adhesive strength for MEMS structures

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Semiconductor devices-Micro-electromechanical devices -- Bend-and shear-type test methods of measuring adhesive strength for MEMS structures ICS 31.080.99 CCSL55 National Standards of People's Republic of China Semiconductor deviceMicro-electromechanical deviceMEMS structure Flexural and shear test methods for bond strength devices-Part 13.Bend-andshear-typetestmethodsof 2022-10-12 Released 2022-10-12 Implementation State Administration for Market Regulation Released by the National Standardization Administration directory Preface I 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Test method 1 4.1 General 1 4.2 Data Analysis 3 5 Test equipment 4 5.1 General 4 5.2 Actuator 4 5.3 Load Cell 4 5.4 Calibration system 4 5.5 Logger 4 6 Sample 4 6.1 Specimen design 4 6.2 Specimen Preparation 5 7 Test conditions 5 7.1 Installation method 5 7.2 Test speed 5 7.3 Specimen calibration 5 7.4 Test Environment 6 8 Test report 6 Appendix A (Informative) Technical Background 7 Reference 10

foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents" drafted. This document is identical to IEC 62047-13.2012 "Semiconductor Devices Microelectromechanical Devices Part 13.MEMS Structural Bonding Flexural and shear test methods for additional strength". The following minimal editorial changes have been made to this document. a) In order to harmonize with the existing standards, the name of the standard is changed to "Bend of Bonding Strength of Semiconductor Devices, Micro-Electro-Mechanical Devices, MEMS Structures". Curve and Shear Test Methods"; b) Added the explanation of "lc" and "D" in formula (1); c) Added the description of the index symbols for the diagrams in Appendix A. Please note that some content of this document may be patented. The issuing agency of this document assumes no responsibility for identifying patents. This document is proposed and managed by the National Standardization Technical Committee of Microelectromechanical Technology (SAC/TC336). This document is drafted by. The Thirteenth Research Institute of China Electronics Technology Group Corporation, Hebei Beitai Electronic Technology Co., Ltd., China Machinery Productivity Promotion Center Co., Ltd., Shaoxing SMIC Manufacturing Co., Ltd., Wuhan Feien Microelectronics Co., Ltd., Jiangsu Zixin New Materials Research Institute Co., Ltd., Ningbo Zhilun Electronics Co., Ltd. The main drafters of this document. Li Qian, Wang Weiqiang, Li Genzi, Gu Feng, Shan Weizhong, Zhou Jia, Li Zhidong, Cui Bo, Wu Yaxiao, Tian Songjie, Li Fanliang, Pan Anyu, Mao Shu. Semiconductor deviceMicro-electromechanical deviceMEMS structure Flexural and shear test methods for bond strength

1 Scope

This document specifies a test method for measuring the bond strength between microscale elements and substrates using cylindrical specimens. This document applies to substrates The upper width and thickness of the microstructures between 1 μm and 1 mm were tested for bonding strength. The micro-sized unit of MEMS device is a laminated fine film produced on the substrate by deposition, electroplating, gluing, photolithography and other processes. composed of graphics. MEMS devices contain a large number of interfaces between dissimilar materials that occasionally decompose during fabrication or use. Floor. Material cohesion at the bonding interface determines the bond strength, in addition, defects and residual stresses near the interface vary with process conditions The change greatly affects the bond strength. This document specifies the bond strength test method for micro-scale elements to facilitate the optimization of MEMS devices. material and process conditions. Due to the wide range of materials and sizes that make up MEMS devices, instruments for measuring micro-scale units have not been fully promoted. This document does not impose specific restrictions on the materials, dimensions and properties of the test specimens.

2 Normative references

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document. IEC 62047-2.2006 Semiconductor devices Microelectromechanical devices Part 2.Tensile test methods for thin film materials (Semicon- als)

3 Terms and Definitions

The following terms and definitions apply to this document. 3.1 Bending bond strength adhesivebendstrength Nominal strength of bonded area in bending mode. 3.2 The nominal strength of the bond area in shear mode.

4 Test methods

4.1 General This document specifies the test method for the bond strength between a cylindrical specimen (see Figure 1) and a substrate. Apply displacement or stress at constant velocity On the columnar specimen, the stress at the delamination interface was measured to analyze the bond strength between the columnar specimen and the substrate. with tapered tip ......

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