GB/T 4058-2009 English PDF

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GB/T 4058-2009: Test method for detection of oxidation induced defects in polished silicon wafers
Status: Valid

GB/T 4058: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 4058-2009	439	Add to Cart	4 days	Test method for detection of oxidation induced defects in polished silicon wafers	Valid
GB/T 4058-1995	359	Add to Cart	3 days	Test method for detection of oxidation induced defects in polished silicon wafers	Obsolete
GB/T 4058-1983	RFQ	ASK	3 days	Single crystal silicon--Detection of microdefects--Hot oxidation-etching technique	Obsolete

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GB/T 12963   GB/T 29055   GB/T 16596   GB/T 8756   GB/T 1554   GB/T 4061   

Basic data

Standard ID: GB/T 4058-2009 (GB/T4058-2009)
Description (Translated English): Test method for detection of oxidation induced defects in polished silicon wafers
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H80
Classification of International Standard: 29.045
Word Count Estimation: 19,163
Date of Issue: 2009-10-30
Date of Implementation: 2010-06-01
Older Standard (superseded by this standard): GB/T 4058-1995
Quoted Standard: GB/T 1554; GB/T 14264; YS/T 209
Regulation (derived from): National Standard Approval Announcement 2009 No.12 (Total No.152)
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the polished silicon oxide induced defects in test methods. This standard is applicable to the detection of polished silicon surface area analog induced oxidation processes or enhanced crystal defects. Inspection monocrystalline silicon oxide induced defects can also refer to this method.

GB/T 4058-2009: Test method for detection of oxidation induced defects in polished silicon wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for detection of oxidation induced defects in polished silicon wafers ICS 29.045 H80 National Standards of People's Republic of China Replacing GB/T 4058-1995 Polished silicon oxide induced defects in test methods Posted 2009-10-30 2010-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard replaces GB/T 4058-1995 "Test Method polished silicon oxide induced defects." This standard compared with GB/T 4058-1995, the main changes are as follows. --- Range increased oxidation test silicon single crystal induced defects; --- Increasing the reference standard; --- Added "Terms and Definitions" chapter; --- Original standard "in Table 1 four commonly used chemical polishing liquid formula," deleted, in Chapter 5 of the chemical polishing liquid ratio was revised Modify, delete, acetic acid formulation; increase the preparation of chromic acid solution A, Sirtl etching solution preparation and Wright etching solution; increased Several international common non-chromium, chromium etching solution formulation, application and suitability classification comparative table; --- By oxidation procedure to replace the original standard procedures oxidation; increasing the (111) surface defect display method, and Wright rot Etching time etching solution of the (111) plane and the (100) surface display method to distinguish the defect; a display (100) surface defects increases Wright etch solution method; --- Increasing the "m" shaped measuring method in defects observed in the selected measuring point. Appendix A of this standard is an informative annex. This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Emei Semiconductor Material Factory. The main drafters of this standard. He Lanying, Wang Yan, Zhang Huijian, Liu Yang. This standard replaces the standards previously issued as follows. --- GB 4058-1983, GB/T 4058-1995; --- GB 6622-1986, GB 6623-1986. Polished silicon oxide induced defects in test methods

1 Scope

This standard specifies the polished silicon oxide induced defects in test methods. This standard is applicable to the detection zone in the surface of polished silicon wafers Analog oxidation process induced or enhanced crystal defects. Inspection oxidation induced defects in silicon single crystal can also refer to this method.

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. GB/T 1554 crystallographic perfection of silicon by preferential etch test methods GB/T 14264 semiconductor material terms YS/T 209 native silicon material defect map

3 Terms and Definitions

Terms and definitions GB/T 14264 in the provisions applicable to this standard.

4 principle of the method

Oxidizing conditions Analog technology, the use of oxidation dressed or expand wafer defects, or both, followed by preferential etching solution Display defects, and observation by microscopy.

5 Reagents and materials

5.1 trioxide, pure class distinctions. 5.2 hydrofluoric acid, pure class distinctions. 5.3 nitric acid, pure class distinctions. 5.4 ammonia, pure class distinctions. 5.5 hydrochloric acid, pure class distinctions. 5.6 hydrogen peroxide, pure class distinctions. 5.7 pure water resistivity greater than 10MΩ · cm (25 ℃). 5.8 acetic acid, pure class distinctions. 5.9 copper nitrate, pure class distinctions. 5.10 cleaning solution # 1. water. aqueous ammonia. hydrogen peroxide = 1 pixel in horizontal (volume ratio). 5.11 cleaning solution # 2. water. hydrochloric acid. hydrogen peroxide = 1 pixel in horizontal (volume ratio). Chemical polishing liquid ratio 5.12. HF.HNO3 = 1. (3 ~ 5) (ratio by volume). 5.13 chromic acid Solution A. chromium trioxide 500g weighed into a beaker of water after complete dissolution, transferred to 1000mL volumetric flask, dilute with water Diluted to volume, and mix (see GB/T 1554). 5.14 chromic acid solution B. Weigh 75g of chromium trioxide in the beaker, after dissolved in water and transferred to 1000mL volumetric flask, dilute to the mark with water Degree, and mix. 5.15 Sirtl etching solution. chromic acid solution A (5.13). hydrofluoric acid = 1/1 (volume ratio), the preparation before use. ......

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