GB/T 1554-2009 English PDFUS$489.00 · In stock
Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 1554-2009: Testing method for crystallographic perfection of silicon by preferential etch techniques Status: Valid GB/T 1554: Historical versions
Basic dataStandard ID: GB/T 1554-2009 (GB/T1554-2009)Description (Translated English): Testing method for crystallographic perfection of silicon by preferential etch techniques Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H80 Classification of International Standard: 29.045 Word Count Estimation: 21,248 Date of Issue: 2009-10-30 Date of Implementation: 2010-06-01 Older Standard (superseded by this standard): GB/T 1554-1995 Quoted Standard: GB/T 14264; YS/T 209 Regulation (derived from): National Standard Approval Announcement 2009 No.12 (Total No.152) Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China Summary: This standard specifies the technical inspection method preferential etching silicon crystal integrity. GB/T 1554-2009: Testing method for crystallographic perfection of silicon by preferential etch techniques---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Testing method for crystallographic perfection of silicon by preferential etch techniques ICS 29.045 H80 National Standards of People's Republic of China Replacing GB/T 1554-1995 Crystallographic perfection of silicon by preferential etch test methods Posted 2009-10-30 2010-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released ForewordThis standard replaces GB/T 1554-1995 "crystallographic perfection of silicon by preferential etch test methods." This standard compared with GB/T 1554-1995, the main changes are as follows. --- Added "The method is also applicable to a silicon single crystal film"; --- Added "Terms and Definitions", "disturbing factors" chapter; --- Chapter 4 the last sentence "with the naked eye and optical microscope observation" to "visually combined with metallurgical microscope Observed"; --- Original standard "in Table 1 four commonly used chemical polishing liquid formula," delete, chemical polishing liquid ratio was modified, deleted acid Recipes; and the content of the various reagents and materials to level modifications; adds weight ratios were 50% CrO3 and 10% CrO3 The ratio of the standard solution; an increase of crystal defects show common etchant comparative table; increase based SEMIMF1809-0704 Several international common non-chromium, chromium etching solution formulation, application and suitability classification comparative table; --- Chapter 9 of the original GB/T 1554-1995 "on (111) surface defects show" in the resistivity of not less than 0.2Ω · cm sample decay of Eclipse time changed 10min ~ 15min; "(100) surface defects show" in the sample and the resistivity of not less than 0.2Ω · cm of electrical Corrosion resistance of the sample time of less than 0.2Ω · cm's all changed 10min ~ 15min; increasing the (110) plane of indications; increase Added to the heavily doped samples show defects; increase the "m" shaped measuring method in selecting the measuring point defects observed in. Appendix A of this standard is an informative annex. This standard by the National Standardization Technical Committee of semiconductor equipment and materials proposed. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Emei Semiconductor Material Factory. The main drafters of this standard. He Lanying, Wang Yan, Zhang Huijian, Liu Yang. This standard replaces the standards previously issued as follows. --- GB 1554-1979, GB/T 1554-1995. --- GB 4057-1983. Crystallographic perfection of silicon by preferential etch test methods1 ScopeThis standard specifies the test method preferential etching silicon crystal integrity. This standard applies to the crystal orientation of < 111>, < 100> or < 110>, resistivity of 10-3 Ω · cm ~ 104 Ω · cm, dislocation density in Monocrystalline silicon ingot or wafer inspection natively defects 105cm-2 between 0cm-2 ~. The method is also applied to Si wafers.2 Normative referencesThe following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. GB/T 14264 semiconductor material terms YS/T 209 native silicon material defect map3 Terms and DefinitionsTerms and definitions GB/T 14264 in the provisions applicable to this standard.4 principle of the methodThe display method using chemical preferential etching crystalline defects. Samples were preferred etch solution, in the defective position is etched shallow pit Or mound, at the macro may compose a certain pattern in the micro presented as discrete corrosion pits or mound. Combined with the use of visual inspection microscope They were observed.5 disturbances5.1 etchant place for too long, there are volatile, precipitate phenomenon, affecting the corrosion effect. 5.2 Corrosion Corrosion time is too short, the dislocation was not obvious; etching time is too long, pitting corrosion and easy to expand, on the surface roughness, it is not clear background Clarity, features not obvious, dislocations are difficult to observe. 5.3 Corrosion corrosion, high temperature, the reaction speed is fast, and the reaction was easily attached to the surface of the sample affect the observed defects. 5.4 corrosion, the sample placed on the way the results of observations also has some influence, if corrosion resistance to hydrofluoric acid in the sample container upright, Etching bath may be generated in the surface of the sample, observe the effect of the defect.6 Reagents and materials6.1 trioxide, chemically pure. 6.2 hydrofluoric acid, chemically pure. 6.3 nitric acid, chemically pure. 6.4 acetic acid, chemically pure. 6.5 pure water resistivity greater than 10MΩ · cm (25 ℃). Chemical etching polishing liquid ratio of 6.6. HF.HNO3 = 1. (3 ~ 5) (volume ratio). 6.7 chromic acid solution A. Weigh 500g of chromium trioxide in a beaker with water completely dissolved, transferred to 1000mL volumetric flask, diluted with water To the mark, and mix. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 1554-2009_English be delivered?Answer: Upon your order, we will start to translate GB/T 1554-2009_English as soon as possible, and keep you informed of the progress. The lead time is typically 2 ~ 4 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 1554-2009_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 1554-2009_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.Question 3: Does the price include tax/VAT?Answer: Yes. 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