GB/T 36360-2018 English PDFUS$279.00 ยท In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 36360-2018: Semiconductor optoelectronic devices -- Blank detail specification for middle power light-emitting diodes Status: Valid
Basic dataStandard ID: GB/T 36360-2018 (GB/T36360-2018)Description (Translated English): Semiconductor optoelectronic devices -- Blank detail specification for middle power light-emitting diodes Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: L53 Classification of International Standard: 31.260 Word Count Estimation: 14,16 Date of Issue: 2018-06-07 Date of Implementation: 2019-01-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 36360-2018: Semiconductor optoelectronic devices -- Blank detail specification for middle power light-emitting diodes---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Semiconductor optoelectronic devices--Blank detail specification for middle power light-emitting diodes ICS 31.260 L53 National Standards of People's Republic of China Semiconductor optoelectronic device Medium power LED blank detail specification Published on.2018-06-07 2019-01-01 implementation State market supervision and administration China National Standardization Administration issued ForewordThis standard was drafted in accordance with the rules given in GB/T 1.1-2009. Please note that some of the contents of this document may involve patents. The issuing organization of this document is not responsible for identifying these patents. This standard is under the jurisdiction of the Ministry of Industry and Information Technology (Electronics) of the People's Republic of China. This standard was drafted. China Electronics Technology Standardization Institute, China Electronics Technology Group Corporation, the thirteenth research institute, National Semiconductor Device Quality Supervision and Inspection Center, Xiamen Sanan Optoelectronics Technology Co., Ltd. The main drafters of this standard. Liu Xiujuan, Zhao Ying, Huang Jie, Peng Hao, Zhao Min, Zhang Ruixia, Shao Xiaojuan. Semiconductor optoelectronic device Medium power LED blank detail specificationIntroductionThis blank detail specification is one of a series of blank detailed specifications for semiconductor optoelectronic devices. Related documents. GB/T 2423.1-2008 Environmental testing of electric and electronic products - Part 2. Test methods Test A. Low temperature GB/T 2423.3-2016 Environmental testing - Part 2. Test method test Cab. constant damp heat test GB/T 2423.4-2008 Environmental testing of electrical and electronic products - Part 2. Test methods Test Db. alternating heat (12h) 12h cycle) GB/T 2423.5-1995 Environmental testing for electric and electronic products - Part 2. Test methods Test Ea and guide. Impact GB/T 2423.10-2008 Environmental testing for electric and electronic products - Part 2. Test method test Fc. Vibration (sinusoidal) GB/T 2423.15-2008 Environmental testing for electric and electronic products - Part 2. Test methods Tests Ga and guides. steady state plus speed GB/T 2423.22-2012 Environmental testing - Part 2. Test methods Test N. Temperature change GB/T 2423.23-2013 Environmental testing - Part 2. Test method test Q. Sealing GB/T 2423.28-2005 Environmental testing for electric and electronic products - Part 2. Test methods Test T. Soldering GB/T 2423.60-2008 Environmental testing of electric and electronic products - Part 2. Test methods Test U. Terminals and overall Assembly strength GB/T 2424.19-2005 Environmental testing guidelines for the environmental impact of electrical and electronic products GB/T 4589.1-2006 Part 10. General specification for discrete devices and integrated circuits GB/T 12565-1990 Semiconductor device optoelectronic device sub-specification SJ/T 11394-2009 Semiconductor Light Emitting Diode Test Method IEC 60191-2-DB-2012 Mechanical standardization of semiconductor devices - Part 2. Dimensions (Mechanical Standardizationofsemiconductordevices-Part 2.Dimensions) IEC 60749-21.2011 Methods of mechanical and climatic testing of semiconductor devices - Part 21. Solderability (Semiconductorde- vices-Mechanicalandclimatictestsmethods-Part 21.Solderability) Request information The items required below shall be included in the corresponding blanks of the regulations. Identification of detailed specifications. [1] The name of the national standardization body authorized to issue detailed specifications. [2] IEC Q detailed specification number. [3] Version number and standard number of the general and sub-specifications. [4] Detailed specification of the country number, release date and any more detailed information required by the national standard system. Device identification. [5] Main features and models. [6] Typical structures (materials, major processes) and packaged materials. If a device has several derivatives, those different points should It is pointed out that, for example, the difference in characteristics is listed in the comparison table. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 36360-2018_English be delivered?Answer: Upon your order, we will start to translate GB/T 36360-2018_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. 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