GB/T 34326-2017 English PDF

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GB/T 34326-2017: Surface chemical analysis -- Depth profiling -- Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 34326-2017	359	Add to Cart	4 days	Surface chemical analysis -- Depth profiling -- Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS	Valid

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Basic data

Standard ID: GB/T 34326-2017 (GB/T34326-2017)
Description (Translated English): Surface chemical analysis -- Depth profiling -- Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: G04
Classification of International Standard: 71.040.40
Word Count Estimation: 18,111
Date of Issue: 2017-09-29
Date of Implementation: 2018-08-01
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 34326-2017: Surface chemical analysis -- Depth profiling -- Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS ICS 71.040.40 G04 National Standards of People's Republic of China Surface Chemical Analysis Depth analysis of AES and Ion beam alignment method and its application in depth analysis of XPS Beam or beam current density measurement method (ISO 16531.2013, IDT) 2017-09-29 Posted 2018-08-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released Directory Foreword Ⅲ Introduction IV 1 Scope 1 2 Normative references 1 3 Terms, definitions, symbols and abbreviations 1 4 system requirements 2 5 ion beam alignment method 3 6 When does the ion beam alignment and its inspection 10 Appendix A (informative) AES ion profile alignment advantages and disadvantages of the depth profile of AES contrast 11 Appendix B (informative) aligned using coaxial electrode cup 12 Reference 13

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard uses the translation method identical with ISO 16531.2013 "Surface chemical analysis of depth analysis of AES and XPS depth analysis When the ion beam alignment method and beam or beam current density measurement method. " This standard by the National Microbeam Analysis Standardization Technical Committee (SAC/TC38) and focal point. This standard drafting unit. China Institute of Metrology. The main drafters of this standard. Wang Hai, Wang Meiling, Zhang Ai Rui, Song Xiaoping.

Introduction

Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) are used for surface chemical analysis, ion sputtering often with their extensive junction It is suitable for surface cleaning of many devices and materials as well as deep characterization of its layered structure. At present, ultrathin films with a thickness of less than 10 nm are in the modern age Devices are increasingly used, and lower-energy ions become more important in depth profiling. In order to get a reproducible sputtering rate and good Depth resolution, it is important to align the ion beam in the best possible position. As the depth resolution that requires better and better, the optimization process becomes more and more It is very important. Regular ion beam alignment is usually not necessary, but ion beam alignment should be performed when instrument parameters change, for example After replacing the ion gun filament or baking instrument. In the ion beam alignment process, the need to stop sputtering, or it will affect the specimen sample to be analyzed Product Ion beam alignment involves different parts of the instrument. This standard describes seven methods to ensure that most analysts can use them Of at least one method. Both methods are also very useful for measuring ion beam or beam densities, and in measuring sputtering yield and sputtering rate The consistency is very important. For commercial instrumentation, manufacturers provide a method and equipment for aligning the ion beam. If the manufacturer The methods provided are appropriate and the methods described in this standard may not be necessary, but they can help confirm the effectiveness of the methods provided by the manufacturer. Literature [1] describes the use of layered samples to measure the depth resolution, and how to use the depth resolution to monitor whether the depth of filling Points, correctly optimized or in line with expectations. However, the method described in literature [1] (from depth measurement to depth resolution evaluation of instruments) is very time consuming. In order to ensure that the ion beam is properly aligned, this standard provides a more efficient method, which can be used in literature [1] describes the first Steps or more daily check. Surface Chemical Analysis Depth analysis of AES and Ion beam alignment method and its application in depth analysis of XPS Beam or beam current density measurement method

1 Scope

This standard specifies the use of inert gas ions in Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) to ensure sputtering In-depth analysis of ion beam alignment methods with good depth resolution and optimal surface cleaning. These methods fall into two categories. One class measures ion beam flow through the Faraday cup and the other passes through the imaging method. The Faraday cup method also specifies ion beam beam densities and beams Flow distribution measurement. These methods do not include depth resolution optimization. These methods are suitable for ion beam gun beam diameter less than 1mm.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. ISO 18115-1 Glossary of surface chemical analysis - Part 1. General terms and spectroscopy terms (Surfacechemical analysis-Vocabulary-Part 1.Generaltermsandtermsusedinspectroscopy) 3 Terms, definitions, symbols and abbreviations The terms and definitions defined in ISO 18115-1 and the following symbols and abbreviations apply to this document. A Faraday cup hole area (AreaofFaradaycupaperture) A0 sample plane ion beam scanning area (Areaofionbeamrasterinsampleplane) The scan area of the AR in the known orientation of the ion beam, B ion beam broadening parameter, equal to Iouter/Iinner ratio (IonbeambroadeningparameterequaltoratioIouter / Iinner) C Current CD beam density (Currentdensity) D 'sample ion dose rate (Iondoserateatthesample) Ion flux rate delivered by the F 'ion gun (Ion fluenceratedeliveredbyiongun) FC Faraday Cup FWHM FWHM, full width at half maximum height (Fulwidthatthehalfmaximum) I in the Faraday cup hole measured at the ion beam current (Rastered ion current amured a property of Far- adaycup) I0 Faraday cup hole measured at the static, small diameter ion beam (Stationary, smaldiameterionbeamcurrent measuredinapertureofFaradaycup) Iinner in the coaxial cup electrode measured ion beam current (Ioncurrentmeasuredatinnerelectrodeofco-axialcup) Iouter measured at the outer coaxial electrode cup ion beam current (Ioncurrent smeared electrodeodeco-axialcup) IS 5.5 provisions of the method measured in the dark zone beam current (Beam currentasmeasuredintodarkregioninthemeth- odspecifiedin5.5) ......

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