GB/T 32999-2016 English PDF

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GB/T 32999-2016: Surface chemical analysis -- Depth profiling -- Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 32999-2016	434	Add to Cart	3 days	Surface chemical analysis -- Depth profiling -- Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer	Valid

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Basic data

Standard ID: GB/T 32999-2016 (GB/T32999-2016)
Description (Translated English): Surface chemical analysis -- Depth profiling -- Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: G04
Classification of International Standard: 71.040.40
Word Count Estimation: 22,243
Date of Issue: 2016-10-13
Date of Implementation: 2017-09-01
Regulation (derived from): National Standard Notice No.1716 of 2016
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 32999-2016: Surface chemical analysis -- Depth profiling -- Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Surface chemical analysis - Depth profiling - Measurement of sputtering rate. mesh-replica method using a mechanical stylus profilometer ICS 71.040.40 G04 National Standards of People's Republic of China Mechanical analysis of surface chemistry analysis Measurement of Sputtering Rate by Profile Method (ISO /T R22335..2007, IDT) 2016-10-13 released 2017-09-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China China National Standardization Management Committee released Directory Preface III Introduction IV 1 Scope 1

2 terms and definitions

3 symbols and abbreviations 1 4 Principle 2 5 Method 2 5.1 Get Grid Complex Pattern 2 Measure the depth of the sputtering pit with a profiler 5.3 Calculate the sputtering rate Summary of laboratory results Appendix A (informative) Geometrical configuration of sample surfaces and ion guns 10 Appendix B (informative) Relationship between grid complex pattern and mesh size References 16

Foreword

This standard is drafted in accordance with the rules given in GB/T 1.1-2009. This standard uses the translation method equivalent to ISO /T R22335..2007 "Surface chemistry analysis depth analysis with mechanical profile grating Complex method to measure the sputtering rate ". This standard is proposed by the National Micro-Standardization Technical Committee (SAC/TC38). This standard is responsible for drafting units. Beijing Normal University Analysis and Testing Center, Tsinghua University Analysis Center. The main drafters of this standard. Wu Zhenglong, Yao Wenqing.

Introduction

This standard gives the use of Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) to determine the depth of the ion sputtering rate analysis Method, the sample sputtering area range of 0.4mm2 ~ 3.0mm2. First place a suitable size on the specimen and sample the table Surface contact of the grid, through the ion sputtering on the sample surface to copy a grid graphics. The sputtering depth is then measured by a mechanical profiler, Assuming that the ion sputtering rate is constant, the sputtering rate is equal to the sputter depth divided by the sputtering time. This standard provides a way to isolate depth analysis Sub-sputtering time is converted to sputter depth. Mechanical analysis of surface chemistry analysis Measurement of Sputtering Rate by Profile Method

1 Scope

This standard specifies the use of Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) to determine the depth of the ion sputtering rate analysis Method, the sample sputtering area range of 0.4mm2 ~ 3.0mm2. This standard applies only to transversely uniform bulk materials or monolayers The ion sputtering rate is determined by the sputtering depth and the sputtering time, and the sputtering depth is measured by a mechanical probe profiler. This standard provides a method of converting ion sputtering time in depth analysis into sputter depth and assuming a constant sputtering rate. This method is not designed for scanning probe microsystems and therefore can not be evaluated by scanning probe microscopy. This method does not apply The sputtering area is less than 0.4 mm2 and is not suitable for sputtering-induced surface roughness compared to the sputtering depth of the measured area Case.

2 terms and definitions

The following terms and definitions apply to this document. 2.1 Sputtering time Ion bombardment of the surface of the specimen. 2.2 Sputter depth The vertical distance between the original surface of the analyzed sample and the surface after the separation of a certain amount of material by depth analysis [1]. 2.3 Sputtering rate The ratio of sputtering depth to sputtering time. 2.4 Grid grid gridmesh An electroformed grid consisting of a set of cells or sieves, typically having a diameter of 3 mm throughout the grid. Note. It is recommended to use 75 mesh gratings per inch [2].

3 symbols and abbreviations

The following symbols and abbreviations apply to this document. d sputter depth t sputtering time R ion sputtering rate Rref reference material Rrel The sputtering rate of the test sample relative to the reference substance R1 The sputtering rate of the substance 1 to be tested AES Auger Electron Spectroscopy (Augerelectronspectroscopy) ......

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