GB/T 30701-2014 English PDF

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GB/T 30701-2014: Surface chemical analysis -- Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 30701-2014	414	Add to Cart	4 days	Surface chemical analysis -- Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy	Valid

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Basic data

Standard ID: GB/T 30701-2014 (GB/T30701-2014)
Description (Translated English): Surface chemical analysis -- Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: G04
Classification of International Standard: 71.040.40
Word Count Estimation: 21,263
Date of Issue: 6/9/2014
Date of Implementation: 12/1/2014
Quoted Standard: GB/T 6379.2-2004; ISO 14644-1-1999; ISO 14706-2000
Adopted Standard: ISO 17331-2004, IDT
Regulation (derived from): National Standards Bulletin No. 11 of 2014
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This Standard specifies the working standard silicon sample surface elemental iron and/or chemical nickel collection method (gas phase decomposition of acid droplets or direct decomposition method) and total reflection X-ray fluorescence spectrometry (TXR

GB/T 30701-2014: Surface chemical analysis -- Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Surface chemical analysis. Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy ICS 71.040.40 G04 National Standards of People's Republic of China Surface chemical analysis work standard silicon sample surface Chemical elements collection methods and a total reflection X-ray Fluorescence Spectrometry (TXRF) Determination determinationbytotal-reflectionX-rayfluorescence (TXRF) spectroscopy (ISO 17331.2004, IDT) Issued on. 2014-06-09 2014-12-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Table of Contents

Introduction Ⅲ Introduction Ⅳ 1 Scope 1 2 Normative references 1 3 Terms and definitions 4 Abbreviations 2 5 Reagent 2 6 Equipment 5 7 sample preparation and measurement environment 5 Preparation 8 calibration sample 6 9 calibration curve 7 10 work on standard samples of iron and/or nickel collected 8 Determination of the standard work on the 11 samples collected iron and/or nickel 9 Precision 9 12 13 Test Report 9 Appendix A (informative) international laboratory test results 11 Annex B (informative) international laboratory GF-AAS pilot projects and ICP-MS measurements 14

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard uses the translation method identical with ISO 17331.2004 "Surface chemical analysis work standard silicon sample surface chemical elements Collection methods and a total reflection X-ray fluorescence spectrometry (TXRF) determination. " This standard incorporates ISO 17331.2010 amendments, the provisions of these amendments has been involved through its external.2004/Amd.1 Vertical wire (‖) side margin positions were marked. The standard micro-beam analysis by the National Standardization Technical Committee (SAC/TC38) and focal points. This standard was drafted. China Institute of Metrology. The main drafters of this standard. Wang, Song Xiaoping, Wang Meiling, Nichols Tian Feng meteor.

Introduction

In the semiconductor industry, commonly used total reflection X-ray fluorescence spectrometry (TXRF) measuring the wafer surface metal impurities. ISO 14706 specifies the silicon surface of the metal impurity atoms measuring surface density between 1 × 1010atoms/cm2 ~ 1 × 1014atoms/cm2 Range TXRF method also provides atomic surface density of from 5 × 108atoms/cm2 ~ 5 × 1012atoms/cm2 range Gas Decomposition (VPD). In VLSI (ULSI) manufacturing, the current very low levels required for wafer surface (less than 1010atoms/cm2) gold Genus impurities measured. Standard samples with low content of metal impurities in TXRF analysis is important (see ISO 14706), but the service life of standard samples are Limit, especially when considering the surface contamination. Thus, the need for sample preparation of working standards for standardization. This standard applies to the calculation of the standard and test silicon wafer surface of the metal impurities. Between 9 laboratories in different countries completed Tests showed that this standard method has good reproducibility and repeatability. Surface chemical analysis work standard silicon sample surface Chemical elements collection methods and a total reflection X-ray Fluorescence Spectrometry (TXRF) Determination

1 Scope

This standard specifies the silicon surface of the sample standard work of elemental iron and/or nickel chemical collection methods (vapor phase decomposition of acid droplets or direct Decomposition) and a total reflection X-ray fluorescence spectrometry (TXRF) assay. NOTE. to use graphite furnace atomic absorption spectroscopy or inductively coupled plasma mass spectrometry instead of total reflection X-ray fluorescence spectroscopy to determine the collected element. This standard applies to atomic surface density of from 6 × 109atoms/cm2 ~ 5 × 1011atoms/cm2 range of iron and/or nickel.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. (Trueness and precision) - Part 2 Accuracy GB/T 6379.2-2004 measurement methods and results. the standard measurement to determine the party Method repeatability and reproducibility of the basic method of multiplexing (ISO 5725-2.1994, IDT) ISO 14644-1.1999 Cleanrooms and associated controlled environments - Part 1. Classification of air cleanliness (Cleanroomsand associatedcontroledenvironments-Part 1. Classificationofaircleanliness) ISO 14706.2000 Surface chemical analysis element wafer surface contaminated total reflection X-ray fluorescence spectrometry (TXRF) Determination [Surfacechemicalanalysis-Determinationofsurfaceelementalcontaminationonsiliconwafersby total-reflectionX-rayfluorescence (TXRF) spectroscopy]

3 Terms and Definitions

The following terms and definitions apply to this document. 3.1 Working standard samples workingreferencematerial Specified in ISO 14706 for calibration wafers. 3.2 Calibration sample calibrationspecimen For calibrating and dried residue containing known amounts of iron and/or nickel silicon. 3.3 Calibration solution calibrationsolution Preparation of the sample solution for calibration. 3.4 Internal standard internalstandard A known amount of vanadium or scandium, used to normalize the residue iron and the fluorescent X-ray intensity/or nickel. ......

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