GB/T 14142-2017 English PDFUS$139.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 14142-2017: Test method for crystallographic perfection of epitaxial layers in silicon -- Etching technique Status: Valid GB/T 14142: Historical versions
Basic dataStandard ID: GB/T 14142-2017 (GB/T14142-2017)Description (Translated English): Test method for crystallographic perfection of epitaxial layers in silicon -- Etching technique Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H25 Classification of International Standard: 77.040 Word Count Estimation: 7,768 Date of Issue: 2017-09-29 Date of Implementation: 2018-04-01 Older Standard (superseded by this standard): GB/T 14142-1993 Regulation (derived from): National Standard Announcement 2017 No. 23 Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China GB/T 14142-2017: Test method for crystallographic perfection of epitaxial layers in silicon -- Etching technique---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Test method for crystallographic perfection of epitaxial layers in silicon-Etching technique ICS 77.040 H25 National Standards of People's Republic of China Replacing GB/T 14142-1993 Silicon epitaxial layer crystal integrity test method corrosion method 2017-09-29 Posted 2018-04-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released ForewordThis standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 14142-1993 "silicon epitaxial crystal integrity test method corrosion." This standard compared with GB/T 14142-1993, the main technical changes are as follows. --- revised method summary (see Chapter 4,.1993 edition Chapter 2); --- Increasing the interference factor (see Chapter 5); --- Increasing the chromium-free solution and its corrosion method (see 5.2,6.13,9.2.2). This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Technical Committee Sub-Technical Committee on Materials (SAC/TC203/SC2) co-sponsored and centralized. This standard was drafted unit. Nanjing Guosheng Electronics Co., Ltd., research Semiconductor Materials Co., Ltd., Zhejiang Jinrui Wang Technology Co., Ltd. the company. The main drafters of this standard. Marin Bao, Luo Hong, Yang Fan, Liu Xiaoqing, Chen He, Zhang Haiying. This standard replaces the standards previously issued as. --- GB/T 14142-1993. Silicon epitaxial layer crystal integrity test method corrosion method1 ScopeThis standard specifies the use of chemical etching display, and the use of metallographic microscope test silicon epitaxial crystal integrity of the method. This standard applies to silicon epitaxial layer stacking fault stacking and dislocation density test, the silicon epitaxial layer thickness greater than 2μm, the defect density test Range 0 ~ 10000cm-2.2 Normative referencesThe following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 14264 semiconductor materials terminology GB/T 30453 silicon defects of the original map3 Terms and definitionsGB/T 14264 and GB/T 30453 defined terms and definitions apply to this document.4 method summaryThe sample was etched with a mixed solution of chromic acid, hydrofluoric acid or hydrofluoric acid, nitric acid, acetic acid, and silver nitrate. The crystal defects of the epitaxial silicon layer were excellent Corrosion first. By observing the surface of the sample with a microscope, the defect characteristics can be observed and the defects counted.5 Interference factors5.1 corrosive liquid placed too long, there is volatility, precipitation phenomenon, affecting the corrosion effect. 5.2 The choice of different etching solution (chromium, chromium-free) may cause some of the silicon epitaxial wafer corrosion effect is different. 5.3 Corrosion time is too short, if the defect characteristics are not obvious, or no pit corrosion, the corrosion time should be extended, while monitoring the silicon epitaxial layer thickness. 5.4 Corrosion time is too long, corrosion pits enlarged, while the surface roughness, the microscope will result in unclear background, defect characteristics are not obvious. 5.5 one-time corrosion of more than 2 epitaxial wafer, easy to cause corrosion temperature, corrosion rate, reactant easily adsorbed on the surface of the sample Subsidence observation, should pay attention to the need to be a one-time corrosion of the epitaxial wafer etching solution ratio. 5.6 Corrosion temperature between the operating room, the amount of corrosion solution ratio will affect the corrosion temperature, corrosion rate, thus affecting the corrosion effect Observed. 5.7 Detection of silicon epitaxial layer thickness of not more than 2μm stacking faults or dislocation defects, you can refer to this standard, the need for careful operation, strict control Corrosion rate. 5.8 Contamination that can not be removed by cleaning or depositing a silicon epitaxial wafer may appear after preferential etching. 5.9 Preferential corrosion, such as the corrosive liquid with insufficient mixing, precipitation may occur, easy and crystal defects confusion. 5.10 Calibration of the field of view of the microscope will directly affect the accuracy of defect density measurement. 5.11 This method of testing, which is based on the assumption of random distribution of defects on the silicon surface, can be used depending on the size and location of the defects ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 14142-2017_English be delivered?Answer: Upon your order, we will start to translate GB/T 14142-2017_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 14142-2017_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 14142-2017_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.Question 3: Does the price include tax/VAT?Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countriesQuestion 4: Do you accept my currency other than USD?Answer: Yes. If you need your currency to be printed on the invoice, please write an email to Sales@ChineseStandard.net. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.Question 5: Should I purchase the latest version GB/T 14142-2017?Answer: Yes. Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 14142-2017 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically. |
