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GB/T 42972-2023 English PDF

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GB/T 42972-2023: Microwave circuits - Test methods for detector
Status: Valid
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 42972-2023419 Add to Cart 4 days Microwave circuits - Test methods for detector Valid

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Basic data

Standard ID: GB/T 42972-2023 (GB/T42972-2023)
Description (Translated English): Microwave circuits - Test methods for detector
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L55
Classification of International Standard: 31.200
Word Count Estimation: 22,259
Date of Issue: 2023-09-07
Date of Implementation: 2024-01-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 42972-2023: Microwave circuits - Test methods for detector

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.200 CCSL55 National Standards of People's Republic of China Microwave circuit detector test method Published on 2023-09-07 2024-01-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Table of contents

PrefaceⅠ 1 Scope 1 2 Normative reference documents 1 3 Terms and Definitions 1 4 General requirements 3 4.1 Test environment requirements 3 4.2 Test instrument 3 4.3 Note 3 5 Detailed requirements 4 5.1 Output voltage 4 5.2 Forward voltage drop 4 5.3 Forward voltage drop difference 5 5.4 Forward current 5 5.5 Reverse current 6 5.6 Reverse breakdown voltage 6 5.7 Input voltage standing wave ratio 7 5.8 Voltage sensitivity 8 5.9 Current sensitivity9 5.10 Video resistor 10 5.11 Tangential sensitivity 10 5.12 Frequency response flatness11 5.13 Output slope 12 5.14 Output intercept 12 5.15 Linearity13 5.16 Dynamic range 14 5.17 Maximum input power 15 5.18 Minimum input power15 5.19 Dynamic range center point 15 5.20 Temperature sensitivity16 Appendix A (informative) Correspondence between detector types and test parameters 18

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This document was drafted by. China Electronics Technology Group Corporation Thirteenth Research Institute, Hebei Beixin Semiconductor Technology Co., Ltd., Shenzhen Standard Quasi-Technology Research Institute, Shenzhen Shenbiao Intellectual Property Promotion Center, Hebei Zhongdian Kehang Testing Technology Service Co., Ltd., Beijing Saidijun Telecom Sub-Product Testing Laboratory Co., Ltd., Wuhan Gewuxin Technology Co., Ltd., Mianyang Micro Micro Testing Technology Co., Ltd. The main drafters of this document. Chi Lei, Peng Hao, Gao Jinhuan, Huang Jie, Gao Lei, Zhao Tao, Wang Lei, Chen Jixiang, Wang K, Wei Bing, Zhao Peng, Xu Xin, He Li, Yonemura Yan. Microwave circuit detector test method

1 Scope

This document describes the electrical parameter testing methods of detectors (hereinafter referred to as "detectors") in microwave circuits. This document is suitable for electrical parameter testing of detectors in single-tube, monolithic and hybrid integrated microwave circuits, including detector diodes, root mean square Detectors, logarithmic amplification detectors, envelope/peak detectors, etc. Note. See Appendix A for the correspondence between detector types and test parameters.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1.General principles

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 output voltageoutputvoltage U0 The voltage value of the output signal. 3.2 forward voltage drop forwardvoltage VF The voltage produced between two terminals by the flow of forward current. 3.3 ΔVF The voltage difference between two ends caused by the flow of different forward currents. 3.4 Forward current forwardcurrent IF The current caused by the forward voltage drop across the detector. 3.5 reverse current reversecurrent IR The current caused by the reverse voltage drop across the detector.
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