GB/T 42905-2023 English PDFUS$189.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 42905-2023: Test method for thickness of silicon carbide epitaxial layer - Infrared reflectance method Status: Valid
Basic dataStandard ID: GB/T 42905-2023 (GB/T42905-2023)Description (Translated English): Test method for thickness of silicon carbide epitaxial layer - Infrared reflectance method Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H21 Classification of International Standard: 77.040 Word Count Estimation: 10,165 Date of Issue: 2023-08-06 Date of Implementation: 2024-03-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 42905-2023: Test method for thickness of silicon carbide epitaxial layer - Infrared reflectance method---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. ICS 77.040 CCSH21 National Standards of People's Republic of China Testing of silicon carbide epitaxial layer thickness by infrared reflection method Published on 2023-08-06 2024-03-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee ForewordThis document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2). This document was drafted by. Anhui Changfei Advanced Semiconductor Co., Ltd., Anhui Xinle Semiconductor Co., Ltd., Hebei Puxing Electronic Technology Co., Ltd. Co., Ltd., Guangdong Tianyu Semiconductor Co., Ltd., Nanjing Guosheng Electronics Co., Ltd., Zhejiang Xinke Semiconductor Co., Ltd., Bruker (Beijing) Technology Co., Ltd., Institute of Semiconductors, Chinese Academy of Sciences, and Institute of Nonferrous Metals Technology and Economics Co., Ltd. The main drafters of this document. Niu Yingxi, Liu Min, Yuan Song, Zhao Lixia, Ding Xiongjie, Wu Huiwang, Qiu Guangyin, Li Suqing, Li Jingbo, Zhang Huijuan, Zhao Yue, Peng Tiekun, Lei Haodong, Yan Guoguo. Testing of silicon carbide epitaxial layer thickness by infrared reflection method1 ScopeThis document describes a method for testing the thickness of silicon carbide epitaxial layers using infrared reflection. This document is applicable to silicon carbide substrates with n-type doping concentration greater than 1×1018cm-3 and homogeneous doping concentration less than 1×1016cm-3. Testing of homogeneous silicon carbide epitaxial layer thickness, the test range is 3μm~200μm.2 Normative reference documentsThe contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 6379.2 Accuracy of measurement methods and results (correctness and precision) Part 2.Determination of repeatability of standard measurement methods Basic methods of sex and reproducibility GB/T 14264 Semiconductor material terminology3 Terms and definitionsThe terms and definitions defined in GB/T 14264 apply to this document.4 Method PrinciplesThe difference in optical constants between the silicon carbide substrate and the epitaxial layer causes optical interference of continuous maximum and minimum characteristic spectra in the reflection spectrum of the sample. Phenomenon, calculated based on the extreme wave number of the interference fringe in the reflection spectrum, the optical constants of the epitaxial layer and the substrate, and the incident angle of the infrared beam on the sample. Find the corresponding epitaxial layer thickness. The schematic diagram of the thickness detection principle of the silicon carbide epitaxial layer is shown in Figure 1. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 42905-2023_English be delivered?Answer: Upon your order, we will start to translate GB/T 42905-2023_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 42905-2023_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 42905-2023_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.Question 3: Does the price include tax/VAT?Answer: Yes. 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