GB/T 42897-2023 English PDF

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GB/T 42897-2023: Micro-electromechanical systems(MEMS) technology - Tensile strength test method for nano-scale membranes of silicon based MEMS
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 42897-2023	269	Add to Cart	3 days	Micro-electromechanical systems(MEMS) technology - Tensile strength test method for nano-scale membranes of silicon based MEMS	Valid

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Basic data

Standard ID: GB/T 42897-2023 (GB/T42897-2023)
Description (Translated English): Micro-electromechanical systems(MEMS) technology - Tensile strength test method for nano-scale membranes of silicon based MEMS
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L59
Classification of International Standard: 31.200
Word Count Estimation: 14,164
Date of Issue: 2023-08-06
Date of Implementation: 2023-12-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 42897-2023: Micro-electromechanical systems(MEMS) technology - Tensile strength test method for nano-scale membranes of silicon based MEMS

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.200 CCSL59 National Standards of People's Republic of China Microelectromechanical Systems (MEMS) Technology Test method for tensile strength of silicon-based MEMS nanometer-thick films Published on 2023-08-06 Implemented on 2023-12-01 State Administration for Market Regulation Released by the National Standardization Administration Committee

Table of contents

Preface III 1 Scope 1 2 Normative reference documents 1 3 Terms and Definitions 1 4 Test requirements 1 5 Test method 3 Appendix A (informative) Recommended deformation scale structure and reading method of indicated value 5 Appendix B (informative) In-situ on-chip test of nanometer thickness film tensile strength body silicon process preparation example 6 Appendix C (informative) Recommended dimensions for in-situ on-chip testing machine for nanometer thickness film tensile strength 7

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed and coordinated by the National Microelectromechanical Technology Standardization Technical Committee (SAC/TC336). This document was drafted by. Peking University, China Machinery Productivity Promotion Center Co., Ltd., China Electronics Technology Standardization Institute, Beijing Yandong Microelectronics Technology Co., Ltd., Xiamen Smart Health Research Institute Co., Ltd., Ningbo Ruicheng Packaging Materials Co., Ltd., Sichuan Fusheng Electric Co., Ltd. Limited liability company, Shenzhen Meisi Advanced Electronics Co., Ltd., Wuxi Weigan Semiconductor Co., Ltd., Guangzhou Aosong Electronics Co., Ltd., Jiang Store Runyu Sensor Technology Co., Ltd. The main drafters of this document. Zhang Dacheng, Yang Fang, Li Genzi, Gu Feng, Liu Peng, Li Fengyang, Wang Xufeng, Gao Chengwu, Chen Yi, Yu Zhiheng, Hua Xuanqing, Liu Ruobing, Zhang Yanxiu, Wang Qingna, Shao Zheng, Li Qiang, Hong Yu, Zhao Chenglong, Zhang Bin, Li Haiquan. Microelectromechanical Systems (MEMS) Technology Test method for tensile strength of silicon-based MEMS nanometer-thick films

1 Scope

This document describes the requirements and tests for in-situ testing of the axial tensile strength of nanometer-thick films involved in silicon-based MEMS processing. method. This document is suitable for tensile strength testing of nanometer-thick films manufactured using microelectronics processes.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 26111 Microelectromechanical systems (MEMS) technical terminology

3 Terms and definitions

The terms and definitions defined in GB/T 26111 and the following apply to this document. 3.1 silicon processing technology siliconprocess Silicon micromachining technology. Note. Although silicon processes are generally divided into surface micromachining and bulk silicon micromachining, many of the technologies are the same. [Source. GB/T 26111-2010,3.5.2] 3.2 It consists of a test structure and a test device, and the two are integrated on the same wafer and processed using the same silicon processing process. A testing machine used to evaluate the tensile strength of process-related micro-nano structures. 3.3 Test structure teststructure Micro-nano structures specially made to measure material properties or microstructure properties. Note. For example, cantilever beam or fixed beam. [Source. GB/T 26111-2010, 3.7.19, modified] 3.4 testing device testingdevice A microstructure that transmits force or displacement to the test structure and allows the force or displacement to be read out.

4 Test requirements

4.1 Design requirements for in-situ on-chip tensile strength testing machine The structural diagram of the in-situ on-chip tensile strength testing machine is shown in Figure 1. ......

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