GB/T 42895-2023 English PDF

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GB/T 42895-2023: Micro-electromechanical systems(MEMS) technology - Bending strength test method for microstructures of silicon based MEMS
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Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 42895-2023	269	Add to Cart	3 days	Micro-electromechanical systems(MEMS) technology - Bending strength test method for microstructures of silicon based MEMS	Valid

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Basic data

Standard ID: GB/T 42895-2023 (GB/T42895-2023)
Description (Translated English): Micro-electromechanical systems(MEMS) technology - Bending strength test method for microstructures of silicon based MEMS
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L59
Classification of International Standard: 31.200
Word Count Estimation: 14,129
Date of Issue: 2023-08-06
Date of Implementation: 2023-12-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 42895-2023: Micro-electromechanical systems(MEMS) technology - Bending strength test method for microstructures of silicon based MEMS

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.200 CCSL59 National Standards of People's Republic of China Microelectromechanical Systems (MEMS) Technology Test method for bending strength of silicon-based MEMS microstructures Published on 2023-08-06 Implemented on 2023-12-01 State Administration for Market Regulation Released by the National Standardization Administration Committee

Table of contents

Preface III 1 Scope 1 2 Normative reference documents 1 3 Terms and Definitions 1 4 Test requirements 2 4.1 Design requirements for in-situ on-chip flexural strength testing machine 2 4.2 Preparation requirements for in-situ on-chip flexural strength testing machine 3 4.3 Test environment requirements 4 5 Test method 4 5.1 Overview 4 5.2 Microstructure bending strength test process 4 5.3 Calculation of microstructure bending strength test results 5 Appendix A (Normative) Test device and test structure design dimensions 6

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed and coordinated by the National Microelectromechanical Technology Standardization Technical Committee (SAC/TC336). This document was drafted by. Peking University, China Machinery Productivity Promotion Center Co., Ltd., China Electronics Technology Standardization Institute, Beijing Yandong Microelectronics Technology Co., Ltd., Wuxi Weigan Semiconductor Co., Ltd., Shenzhen Meisi Advanced Electronics Co., Ltd., Nanjing Fein Microelectronics Co., Ltd. Company, Guangzhou Aosong Electronics Co., Ltd., Shanghai Lingang New Area Cross-Border Data Technology Co., Ltd. The main drafters of this document. Zhang Dacheng, Yang Fang, Li Genzi, Gu Feng, Liu Peng, Gao Chengwu, Yu Zhiheng, Wang Xufeng, Li Fengyang, Hua Xuanqing, Chen Yi, Liu Ruobing, Zhang Yanxiu, Wan Caixin, Wu Bin, Cao Wan, Zhang Bin, Zhang Qixin. Microelectromechanical Systems (MEMS) Technology Test method for bending strength of silicon-based MEMS microstructures

1 Scope

This document describes the requirements and test methods for in-situ testing of the bending strength of microstructures involved in silicon-based MEMS processing. This document applies to bending strength testing of microstructures manufactured using microelectronic processes.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 26111 Microelectromechanical systems (MEMS) technical terminology GB/T 34558 Metal matrix composite terminology

3 Terms and definitions

The terms and definitions defined in GB/T 26111 and GB/T 34558 and the following apply to this document. 3.1 A beam in which the maximum normal stress is equal in all cross sections. 3.2 silicon processing technology siliconprocess Silicon micromachining technology. Note. Although silicon processes are generally divided into surface micromachining and bulk silicon micromachining, many of the technologies are the same. [Source. GB/T 26111-2010,3.5.2] 3.3 Bending strengthbendingstrength The maximum normal stress that the specimen bears before bending and breaking. [Source. GB/T 34558-2017,3.6.1.5] 3.4 It consists of a test structure and a test device, and the two are integrated on the same wafer and processed using the same silicon processing process. Testing machine for evaluating the bending strength of process-related microstructures. 3.4.1 testing structure testing structure Microstructures specially made for the purpose of measuring material properties or the performance of microstructures. Note. For example, cantilever beam or fixed beam. ......

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