GB/T 42274-2022 English PDF

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GB/T 42274-2022: Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials - Secondary ion mass spectrometry
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 42274-2022	199	Add to Cart	3 days	Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials - Secondary ion mass spectrometry	Valid

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Basic data

Standard ID: GB/T 42274-2022 (GB/T42274-2022)
Description (Translated English): Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials - Secondary ion mass spectrometry
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H17
Classification of International Standard: 77.040
Word Count Estimation: 10,131
Date of Issue: 2022-12-30
Date of Implementation: 2023-04-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 42274-2022: Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials - Secondary ion mass spectrometry

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77.040 CCSH17 National Standards of People's Republic of China The content of trace elements (magnesium, gallium) in aluminum nitride materials and Determination of distribution by secondary ion mass spectrometry Posted on 2022-12-30 2023-04-01 Implementation State Administration for Market Regulation Released by the National Standardization Management Committee

foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules for Standardization Documents" drafting. Please note that some contents of this document may refer to patents. The issuing agency of this document assumes no responsibility for identifying patents. This document is prepared by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standard It is jointly proposed and managed by the Materials Subcommittee (SAC/TC203/SC2) of the Chemical Technology Committee. This document was drafted by. University of Science and Technology Beijing, Institute of Semiconductors, Chinese Academy of Sciences, Nonferrous Metal Technology and Economic Research Institute Co., Ltd. Division, Qinghai Institute of Salt Lake, Chinese Academy of Sciences, Qinghai Shengnuo Optoelectronics Technology Co., Ltd. The main drafters of this document. Qi Junjie, Wei Xuecheng, Yan Dan, Li Suqing, Wei Zhe, Hu Chaosheng, Li Zhichao, Xu Lei, Wang Junxi, Li Jinmin, Wei Ming, Liu Jianghua, Zhang Chengrong. The content of trace elements (magnesium, gallium) in aluminum nitride materials and Determination of distribution by secondary ion mass spectrometry

1 Scope

This document describes a secondary ion mass spectrometry method for the determination of the content and distribution of trace magnesium and gallium in aluminum nitride single crystals. This document is applicable to the quantitative determination of the content and distribution of trace magnesium and gallium in aluminum nitride single crystal. The determination range is that the content of magnesium and gallium is not less than 1×1016cm-3, the element content (atomic percentage) is not more than 1%. Note. The content of the element to be measured in the aluminum nitride single crystal is calculated by the number of atoms per cubic centimeter.

2 Normative references

The contents of the following documents constitute the essential provisions of this document through normative references in the text. Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document. GB/T 14264 Terminology of semiconductor materials GB/T 22461 Surface Chemical Analysis Vocabulary GB/T 25186 Surface Chemical Analysis Secondary Ion Mass Spectrometry Determination of Relative Sensitivity Factors by Ion Implantation Reference Substances GB/T 32267 Analytical instrument performance measurement terms

3 Terms and Definitions

The terms and definitions defined in GB/T 14264, GB/T 22461, GB/T 25186 and GB/T 32267 apply to this document.

4 Principles of the method

Under the condition of high vacuum (vacuum degree is better than 10-7Pa), the primary ions generated by the oxygen ion source are accelerated, purified and focused, and bombarded with nitrogen A variety of particles are sputtered on the surface of an aluminum sample, and the secondary ions are extracted, and the ions with different mass-to-charge ratios are separated by a mass spectrometer, and the sample is recorded. The ratio of the ion count rate of the analyte element 24Mg, 69Ga and the matrix element 27Al in the product. Quantitatively analyzed and calculated using the relative sensitivity factor The content of the element to be measured in the aluminum nitride single crystal.

5 Interfering factors

5.1 Magnesium and gallium adsorbed on the surface of the sample may affect the test results of their content. During the entire operation process, the sample should avoid excessive contact with the outside world. If touched, purge with dry nitrogen before placing in the cavity. 5.2 Secondary ion mass spectrometers have memory effects. If samples with high magnesium and gallium content are tested, magnesium and gallium may remain in the sample chamber of the instrument. Gallium, which affects test results for magnesium and gallium content. 5.3 Different models of instruments or the state of the same instrument (such as beam current density, focus state, electron multiplier efficiency, visual Field diaphragm and contrast diaphragm size, analysis chamber vacuum, etc.) will affect the detection limit of this method. ......

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