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GB/T 35309-2017 English PDF

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GB/T 35309-2017: Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies
Status: Valid
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 35309-2017199 Add to Cart 3 days Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies Valid

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Basic data

Standard ID: GB/T 35309-2017 (GB/T35309-2017)
Description (Translated English): Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H17
Classification of International Standard: 77.040
Word Count Estimation: 10,181
Date of Issue: 2017-12-29
Date of Implementation: 2018-07-01
Regulation (derived from): National Standards Bulletin 2017 No. 32
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 35309-2017: Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies


---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies ICS 77.040 H17 National Standards of People's Republic of China Evaluation by zone melting and spectroscopic methods Specification of granular polycrystalline silicon 2017-12-29 Posted 2018-07-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Technical Committee Sub-Technical Committee on Materials (SAC/TC203/SC2) co-sponsored and centralized. This standard was drafted unit. Jiangsu Zhongneng Silicon Technology Development Co., Ltd., Newtenergy Co., Ltd., Tianjin Central European semiconductor material Materials Technology Co., Ltd., Qinghai Yellow River Hydropower Development Co., Ltd. New Energy Branch, Luoyang Silicon High Technology Co., Ltd. The main drafters of this standard.Wang Tao Xia, Liu Xiaoxia, Geng Quan Rong, Lu Wenfeng, Liu Defa, Hu Wei, Qiu Yanmei, silver, by Bai Ling, Qin Rong, Yan continents. Evaluation by zone melting and spectroscopic methods Specification of granular polycrystalline silicon

1 Scope

This standard specifies the use of zone melting method and spectroscopic analysis of granular polysilicon sub-position carbon atom concentration, the donor impurity concentration and acceptor Method of impurity concentration. This standard applies to the size of 600μm ~ 3000μm granular polysilicon, other sizes of granular polysilicon can refer to the standard Quasi-implementation.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 620 chemical reagents hydrofluoric acid GB/T 622 chemical reagents hydrochloric acid GB/T 626 chemical reagent nitric acid GB/T 1558 silicon substituted carbon atoms in infrared absorption measurement method GB/T 4059 silicon polycrystalline atmosphere area test method of fusion phosphorus GB/T 4842 argon GB/T 6679 General rules for sampling solid chemical products GB/T 11446.1 electronic water GB/T 14264 semiconductor materials terminology GB/T 24581 Low-temperature Fourier transform infrared spectroscopy method for the determination of III and V impurity in silicon single crystal GB/T 25915.1 cleanroom and related controlled environment Part 1. air cleanliness level GB/T 29057 zone melting crystal pulling method and spectroscopic analysis of polycrystalline silicon rod procedures

3 Terms and definitions

GB/T 14264 defined terms and definitions apply to this document.

4 method summary

The silicon particles into the high-purity quartz tube, the quartz tube into the high-purity argon below the silicon particles in the role of argon in fluidized, transfer Section coil position and power, so that the gradual adhesion of particles of silicon in the molten silicon rods (or seed), prepared as polycrystalline silicon rods. Using GB/T 4059, Argon atmosphere, the role of single crystal seed, the use of regional melting polycrystalline silicon rods grown as a single crystal ingot rod. Using GB/T 1558 And GB/T 24581 provisions of the method for determining the carbon substitution and donor impurity concentration, acceptor impurity concentration.

5 Interference factors

The main disturbing factors in sample preparation are as follows.
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