GB/T 35306-2023 English PDF

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GB/T 35306-2023: Determination of carbon and oxygen content in single crystal silicon - Low temperature fourier transform infrared spectrometry method
Status: Valid

GB/T 35306: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 35306-2023	189	Add to Cart	3 days	Determination of carbon and oxygen content in single crystal silicon - Low temperature fourier transform infrared spectrometry method	Valid
GB/T 35306-2017	399	Add to Cart	3 days	Test method for carbon and oxygen content of single crystal silicon -- Low temperature Fourier transform infrared spectrometry	Obsolete

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GB/T 38976   GB/T 14849.3   GB/T 14849.1   GB/T 14140   GB/T 35309   

Basic data

Standard ID: GB/T 35306-2023 (GB/T35306-2023)
Description (Translated English): Determination of carbon and oxygen content in single crystal silicon - Low temperature fourier transform infrared spectrometry method
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H17
Classification of International Standard: 77.040
Word Count Estimation: 10,179
Date of Issue: 2023-08-06
Date of Implementation: 2024-03-01
Older Standard (superseded by this standard): GB/T 35306-2017
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 35306-2023: Determination of carbon and oxygen content in single crystal silicon - Low temperature fourier transform infrared spectrometry method

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77.040 CCSH17 National Standards of People's Republic of China Replace GB/T 35306-2017 Determination of carbon and oxygen content in silicon single crystal Low Temperature Fourier Transform Infrared Spectroscopy Published on 2023-08-06 2024-03-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document replaces GB/T 35306-2017 "Determination of carbon and oxygen content in silicon single crystals by low-temperature Fourier transform infrared spectroscopy" and is consistent with Compared with GB/T 35306-2017, in addition to structural adjustments and editorial changes, the main technical changes are as follows. a) Changed the scope of application (see Chapter 1, Chapter 1 of the.2017 edition); b) The method principle has been changed (see Chapter 4, Chapter 4 of the.2017 edition); c) Interference factors have been changed (see Chapter 5, Chapter 5 of the.2017 edition); d) The wavenumber range of the instrument has been changed (see 7.1,.2017 version of 7.1); e) The requirements for samples and reference samples have been changed (see Chapter 8, Chapter 8 and Chapter 9 of the.2017 edition); f) Changed the sample thickness requirements (see 9.2, 8.3 of the.2017 version); g) Added the baseline range, integration range and calibration factor of substituted carbon and interstitial oxygen (see 10.1); h) Test data processing has been changed (see Chapter 10, Chapter 11 of the.2017 edition); i) Changed the precision (see Chapter 11, Chapter 12 of the.2017 edition); j) The absorption peak positions and calibration factors of carbon and oxygen infrared spectra at different temperatures have been deleted (see Appendix A of the.2017 version). Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2). This document was drafted by. Qinghai Xincei Technology Co., Ltd., Longi Green Energy Technology Co., Ltd., and Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Qinghai Upper Yellow River Hydropower Development Co., Ltd. New Energy Branch, Luoyang China Silicon High-Tech Co., Ltd., Bruker (Beijing) Technology Co., Ltd., Asia Silicon Industry (Qinghai) Co., Ltd., Yichang CSG Silicon Materials Co., Ltd., Shaanxi Nonferrous Tianhongruike Silicon Materials Co., Ltd., Xinjiang Xinte New Energy Materials Testing Center Co., Ltd., Hongyuan New Materials (Baotou) Co., Ltd., Gaojing Solar Energy Co., Ltd. CO., LTD. The main drafters of this document. Xue Xinlu, Qin Rong, Li Suqing, Yang Xiaoqing, Deng Hao, Yue Yufang, Li Mingzhen, Zhao Xiong, Zhang Yuanyuan, Zhao Yue, Lei Haodong, Cai Yanguo, Chen Weiguo, Lu Shenggang, Xu Yan, Zhang Zun, Qiu Yanmei, Li Xiangyu, Yang Yang, Xu Zhiqun, Wang Qi. This document was first published in.2017 and this is the first revision. Determination of carbon and oxygen content in silicon single crystal Low Temperature Fourier Transform Infrared Spectroscopy

1 Scope

This document describes a method for determining the substitutional carbon and interstitial oxygen content in silicon single crystals using low-temperature Fourier transform infrared spectroscopy. This document is applicable to n-type silicon single crystals with room temperature resistivity greater than 1Ω·cm and p-type silicon single crystals with room temperature resistivity greater than 3Ω·cm. For the determination of intermediate carbon and interstitial oxygen content, the measurement range (in terms of number of atoms) is 2.5×1014cm-3~1.5×1017cm-3.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 8170 Numerical rounding rules and representation and determination of limit values GB/T 8322 Molecular absorption spectrometry terminology GB/T 14264 Semiconductor material terminology GB/T 29057 Procedure for evaluating polycrystalline silicon rods using zone melting crystal pulling method and spectral analysis method

3 Terms and definitions

The terms and definitions defined in GB/T 8322 and GB/T 14264 and the following apply to this document. 3.1 backgroundspectrum backgroundspectrum In an infrared spectrometer, the spectral lines obtained are measured using a single beam without the presence of a sample. Note. Usually includes nitrogen, air and other information. 3.2 referencespectrum Spectrum of the reference sample. Note. When testing with a double-beam spectrometer, place the reference sample in the sample optical path and obtain the result when the reference optical path is empty; when testing with a Fourier transform infrared spectrometer and a single When using a beam spectrometer, the spectrum is obtained by subtracting the background spectrum from the spectrum of the reference sample. 3.3 sample spectrum samplespectrum Spectrum of the test sample. Note. When using a double-beam instrument, place the sample in the sample optical path and obtain it when the reference optical path is empty; when using a Fourier transform infrared spectrometer and a single-beam spectrometer. When, it is obtained by subtracting the background spectrum from the spectrum of the test sample.

4 Method Principle

Cool the silicon single crystal sample to a temperature below 15K, and collect the background, reference and sample transmission spectra, reference spectrum and sample light respectively. ......

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