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GB/T 35305-2017 English PDF

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GB/T 35305-2017: Monocrystalline gallium arsenide polished wafers for solar cell
Status: Valid
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 35305-2017199 Add to Cart 3 days Monocrystalline gallium arsenide polished wafers for solar cell Valid

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Basic data

Standard ID: GB/T 35305-2017 (GB/T35305-2017)
Description (Translated English): Monocrystalline gallium arsenide polished wafers for solar cell
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H83
Classification of International Standard: 29.045
Word Count Estimation: 10,164
Date of Issue: 2017-12-29
Date of Implementation: 2018-07-01
Regulation (derived from): National Standards Bulletin 2017 No. 32
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 35305-2017: Monocrystalline gallium arsenide polished wafers for solar cell

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Monocrystalline gallium arsenide polished wafers for solar cell ICS 29.045 H83 National Standards of People's Republic of China GaAs single crystal polishing sheet for solar cells 2017-12-29 Posted 2018-07-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Technical Committee Sub-Technical Committee on Materials (SAC/TC203/SC2) co-sponsored and centralized. This standard was drafted unit. Yunnan Lincang Xin Yuan Germanium Co., Ltd., Yunnan Zhongke Xin Yuan Crystal Materials Co., Ltd., Chinese Academy of Sciences Semiconductor Institute. The main drafters of this standard. Huifeng, universal Kun, Lvchun Fu, Dong Rukun. GaAs single crystal polishing sheet for solar cells

1 Scope

This standard specifies the requirements of solar gallium arsenide single crystal wafers for solar cells, test methods, inspection rules and signs, packaging, transportation, Storage and quality certificates. This standard applies to solar cells with gallium arsenide single crystal polishing film (hereinafter referred to as gallium arsenide polishing film).

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 2828.1 Sampling procedures for sampling inspection - Part 1. Batch inspection sampling plan retrieved by acceptance quality limit (AQL) GB/T 6618 Wafer thickness and total thickness change test method GB/T 6619 silicon bending test method GB/T 6620 silicon warpage non-contact test method GB/T 6621 silicon surface roughness test method Visual inspection of GB/T 6624 surface quality of silicon polishing GB/T 13387 silicon and other electronic materials - Reference surface length measurement method GB/T 14264 semiconductor materials terminology GB/T 19921 silicon polishing surface particle test methods GB/T 25075 gallium arsenide single crystal solar cells GB/T 25915.1 cleanroom and related controlled environment Part 1. air cleanliness level GB/T 29505 flat surface of silicon surface roughness measurement method YS/T 26 silicon edge detection method

3 Terms and definitions

GB/T 14264 defined terms and definitions apply to this document.

4 requirements

4.1 Classification 4.1.1 gallium arsenide polishing film according to the conductivity type is divided into two types of N-type and P-type. 4.1.2 gallium arsenide polishing film according to the diameter of the size is divided into φ50.8mm, φ76.2mm, φ100.0mm three. 4.2 Physical and chemical properties GaAs polishing sheet resistivity, carrier concentration, crystal orientation and deviation from the degree of dislocation density should be consistent with the provisions of GB/T 25075. 4.3 geometric parameters Gallium arsenide polishing sheet geometry parameters should be consistent with the provisions of Table 1.
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