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GB/T 32279-2015 English PDF

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GB/T 32279-2015: Specification for order entry format of silicon wafers
Status: Valid
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 32279-2015399 Add to Cart 4 days Specification for order entry format of silicon wafers Valid

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Basic data

Standard ID: GB/T 32279-2015 (GB/T32279-2015)
Description (Translated English): Specification for order entry format of silicon wafers
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H80
Classification of International Standard: 29.045
Word Count Estimation: 19,171
Date of Issue: 2015-12-10
Date of Implementation: 2017-01-01
Regulation (derived from): National Standard Announcement 2015 No.38
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 32279-2015: Specification for order entry format of silicon wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Specification for order entry format of silicon wafers ICS 29.045 H80 National Standards of People's Republic of China Wafer order form input specification 2015-12-10 released 2017-01-01 Implementation General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China China National Standardization Management Committee released

Foreword

This standard is drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the national semiconductor equipment and materials standards (SAC/TC203/SC2) jointly proposed and centralized. The drafting of this standard unit. universal silicon peak Electronics Co., Ltd., Zhejiang Province, silicon material quality inspection center, Hangzhou Heiner Semiconductor limited Company, Nanjing Guosheng Electronics Co., Ltd., a new research materials Co., Ltd., Zhejiang Jinruihong Technology Co., Ltd., Jiangsu Association Xin silicon Science and Technology Development Co., Ltd., China Nonferrous Metals Industry Standard Measurement Quality Institute. The main drafters of this standard. Zhu Xingping, Lou Chunlan, Dai Wenxian, Mao Weizhong, Zhao Jiping, Wang Feiyao, Ma Linbao, Sun Yan, Lin Qingxiang, Yang Suxin, Zou Jianqiu. Wafer order form input specification

1 Scope

This standard specifies the format requirements and use of the wafer order. This standard applies to silicon single crystal grinding film, silicon single crystal polishing film, silicon single crystal epitaxial wafers, solar cell silicon single crystal cutting sheet, solar energy The order form of the polycrystalline silicon wafer for the pool should be used in the order of other semiconductor materials.

2 normative reference documents

The following documents are indispensable for the application of this document. For dated references, only the dated edition applies to this article Pieces. For undated references, the latest edition (including all modifications) applies to this document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 1551 silicon single crystal resistivity determination method GB/T 1553 Photodiode attenuation method for the determination of minority carriers in silicon and germanium bodies GB/T 1554 silicon crystal integrity chemical selective corrosion test method GB/T 1555 Semiconductor single crystal crystal orientation method Measurement of Interstitial Oxygen Content in Silicon Crystal by Infrared Absorption Determination of Substituted Carbon Atom Content in Silicon by Infrared Absorption GB/T 4058 Test method for oxidative inducing defects of silicon polishing sheets GB/T 6618 Wafer thickness and total thickness variation test method GB/T 6619 Test method for bending of silicon wafers Non - contact test method for wobble of wafers GB/T 6620 GB/T 6621 wafer surface flatness test method Test method for surface quality of GB/T 6624 silicon polishing sheet Methods of measurement of radial resistivity change in silicon wafers GB/T GB/T 12965 silicon single crystal cutting disc and grinding plate GB/T 13387 Wafer and other electronic material Wafer reference surface length measurement method GB/T 13388 silicon reference surface crystallographic orientation X - ray test method GB/T 14139 silicon epitaxial wafers Method for measuring the diameter of silicon wafers GB/T Test method for crystal integrity of silicon epitaxial layers - Corrosion method GB/T 14142 GB/T 14144 Method for measuring the radial variation of interstitial oxygen content in silicon crystals GB/T 14264 terminology for semiconductor materials Measurement of Infrared Reflectance of Light - Doped Silicon Epitaxial Layer on heavily Doped Substrates Test method for surface particles of silicon polished sheets GB/T 19921 Test Method for Total Reflection X - ray Fluorescence Spectra of Metal Stains on Si/T GB/T 26068 Non-contact microwave reflection photoconductive attenuation test method for silicon carrier carrier lifetime GB/T 26071 silicon single crystal cutting sheet for solar cells GB/T 29055 Polycrystalline silicon wafers for solar cells
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