GB/T 32188-2015 English PDF

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GB/T 32188-2015: Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 32188-2015	169	Add to Cart	3 days	Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate	Valid

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Basic data

Standard ID: GB/T 32188-2015 (GB/T32188-2015)
Description (Translated English): Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040
Word Count Estimation: 8,834
Date of Issue: 2015-12-10
Date of Implementation: 2016-11-01
Quoted Standard: GB/T 14264
Regulation (derived from): National Standard Announcement 2015 No.38
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the use of double-crystal X-ray diffraction test gallium nitride single crystal substrate sheet rocking curve full width at half way. This standard applies to chemical vapor deposition and other methods for preparing a gallium nitride single crystal substrate sheet growth.

GB/T 32188-2015: Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate ICS 77.040 H21 National Standards of People's Republic of China Gallium nitride single crystal substrate sheet double-crystal X-ray rocking curve FWHM test methods Issued on. 2015-12-10 2016-11-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou Navier Technology Co., Ltd., China science School Physics Institute, Beijing Branch of days of blue Semiconductor Co., Ltd., Dandong New Oriental Crystal Instruments. The main drafters of this standard. Qiu Yongxin, Ren Guoqiang, Liu Zheng Hui, who Xionghui, Wang Jianfeng, Chen Xiaolong, Wang Wenjun, Zheng Hongjun, Xu Ke, Zhao Songbin. Gallium nitride single crystal substrate sheet double-crystal X-ray rocking curve FWHM test methods

1 Scope

This standard specifies the use of double-crystal X-ray diffraction test gallium nitride single crystal substrate sheet rocking curve full width at half way. This standard applies to chemical vapor deposition and other methods for preparing a gallium nitride single crystal substrate sheet growth.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 14264 semiconductor material terms

3 Terms and Definitions

GB/T 14264 and defined by the following terms and definitions apply to this document. 3.1 Diffraction plane thediffractionplane X-ray of the incident beam, the beam diffraction plane configuration. 3.2 FWHM fulwidthathalfmaximum; FWHM Rocking curve width at half maximum intensity curve. 3.3 χ axis χaxis Sample tilt axes intersect the surface of the sample stage and the diffraction plane is made. 3.4 χ angle χangle The angle between the sample surface and a crystal surface of the sample. 3.5 φ angle φangle Sample surface normal angle of rotation around the sample stage. 3.6 φ scan φscan And recorded continuously changing φ angle diffraction intensity measurement mode. 3.7 ω angle ωangle The angle between the incident X-rays and the sample stage surface. ......

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