GB/T 32189-2015 English PDF

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GB/T 32189-2015: Test method for surface roughness of GaN single crystal substrate by atomic force microscope
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 32189-2015	239	Add to Cart	3 days	Test method for surface roughness of GaN single crystal substrate by atomic force microscope	Valid

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Basic data

Standard ID: GB/T 32189-2015 (GB/T32189-2015)
Description (Translated English): Test method for surface roughness of GaN single crystal substrate by atomic force microscope
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040
Word Count Estimation: 11,195
Date of Issue: 2015-12-10
Date of Implementation: 2016-11-01
Quoted Standard: GB/T 3505; GB/T 14264; GB/T 27760; JJF 1351
Regulation (derived from): National Standard Announcement 2015 No.38
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies a method for measuring the surface roughness of a gallium nitride single crystal substrate by an atomic force microscope. This standard applies to chemical vapor deposition and other methods of preparation of the surface roughness of less than 10 nm of GaN single crystal substrate. Other semiconductor single crystal substrates with similar surface structures shall be agreed upon by the testing parties prior to testing using the methods provided in this standard.

GB/T 32189-2015: Test method for surface roughness of GaN single crystal substrate by atomic force microscope

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for surface roughness of GaN single crystal substrate by atomic force microscope ICS 77.040 H21 National Standards of People's Republic of China Crystal gallium nitride substrate surface roughness Atomic force microscopy test method microscope Issued on. 2015-12-10 2016-11-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science and Technology Co., Ltd., Suzhou Navier. The main drafters of this standard. Liu Zheng Hui, Zhong sea ship, Zhao Geng Xu, Fan Yingmin, Qiu Yongxin, who Xionghui, Wang Jianfeng, Xu Ke. Crystal gallium nitride substrate surface roughness Atomic force microscopy test method

1 Scope

This standard specifies the monocrystalline surface of the substrate with an atomic force microscope roughness of gallium nitride. This standard applies to chemical vapor deposition and other surface preparation method for growing gallium nitride single crystal substrate roughness less than 10nm in. Other semiconductor crystal substrate having a front surface structure similar to the standard method provided by the application test, the test reached by mutual agreement Consistent.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 3505 Geometrical product specifications (GPS) Surface texture Profile method - Terms, definitions and surface texture parameters GB/T 14264 semiconductor material terms GB/T 27760 by the method of atomic force microscope sub-nanometer height measurements to calibrate atomic steps (111) Si JJF1351 scanning probe microscope calibration specification

3 Terms and Definitions

GB/T 3505, the terms and definitions GB/T 14264 and GB/T 27760 apply to this document defined.

4 principle of the method

4.1 Test Principle This standard test sample AFM 3D surface topography of an area, and then included in the surface topography according to a set of tables Numerical evaluation of surface roughness profile. Since the resolution of the atomic force microscope (i.e., vertical resolution) in the height direction usually not more than 0.1nm, Generally horizontal resolution up to 10nm, so they can be clearly distinguished atomic steps on a single crystal substrate (step height is usually < 1nm), is the assessment Price effective means single crystal substrate roughness. Principle of AFM surface roughness of the test sample is shown in Fig. When the test sample surface morphology, first through a coarse approximation means Set close to the tip and the sample from several nanometers, thus producing interaction. AFM contact mode, tapping mode and other Operating modes probe tip and the sample interaction force. In contact mode, for example, direct contact with the probe and the sample, the interaction force suspension Beam arm is deformed so as to be detected by the laser and the optical lever quadrant photodetector constituted. When the sample by the scanning signal generator When the station to generate xy direction, through the feedback controller controls the level z of the sample, so that deformation of the cantilever arm is always kept constant, the output z Changes in surface topography is to test. If tapping mode, through a vibration exciter makes Izod generate several nanometers to tens of nanometers vibrator Vibration amplitude when the tip and sample interaction force generated close to each other, will change the vibration amplitude and phase by feedback control scanning Z height control sample, maintaining constant vibration amplitude, you can get the output z surface topography. ......

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