GB/T 31225-2014 English PDF

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GB/T 31225-2014: Test method for the thickness of silicon oxide on Si substrate by ellipsometer
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 31225-2014	229	Add to Cart	3 days	Test method for the thickness of silicon oxide on Si substrate by ellipsometer	Valid

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Basic data

Standard ID: GB/T 31225-2014 (GB/T31225-2014)
Description (Translated English): Test method for the thickness of silicon oxide on Si substrate by ellipsometer
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: J04
Classification of International Standard: 17.040.01
Word Count Estimation: 10,163
Date of Implementation: 4/15/2015
Quoted Standard: JJF 1059.1-2012
Regulation (derived from): People's Republic of China Announcement of Newly Approved National Standards 2014 No. 22
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This Standard specifies the method for measuring the thickness of a thin layer of silicon dioxide. This Standard applies to the test silicon substrate uniform thickness, isotropic, 10nm ~ l 000 nm thick silicon dioxide layer thickness, the other to the te

GB/T 31225-2014: Test method for the thickness of silicon oxide on Si substrate by ellipsometer

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for the thickness of silicon oxide on Si substrate by ellipsometer ICS 17.040.01 J04 National Standards of People's Republic of China Ellipsometer measurements on silicon surface of the silica The thickness of the thin layer method Issued on. 2014-09-30 2015-04-15 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard was proposed by the Chinese Academy of Sciences. This standard by the National Standardization Technical Committee of nano technology (SAC/TC279) centralized. This standard was drafted. Shanghai Jiaotong University, nano-technology and application National Engineering Research Center. The main drafters of this standard. Kim Seung-yu, Li Wei, Liang Qi, Lu Qinghua, Dannong, Zhang Bing.

Introduction

Conventional ellipsometry technique for measuring film thickness of the sample pervasive, General Instrument mostly variable wavelength variable angle spectroscopic ellipsometer type, relative Given angle in a given wavelength of light extinction ellipsometry measurements, ellipsometry can get more information for the model fit to get accurate film thickness knot Fruit; In addition, since the material is traceable standard silicon surface of the silica thin reason, this standard specifies the use of continuously variable wavelength, variable angle Spectral type ellipsometer measuring the thickness of the silicon surface of the silica thin layer method. Ellipsometer measurements on silicon surface of the silica The thickness of the thin layer method

1 Scope

This standard gives a continuous variable wavelength, variable angle spectroscopic ellipsometer type silicon dioxide layer thickness measurements on silicon surfaces method. This standard applies to the test silicon substrate thickness uniform, isotropic, 10nm ~ 1000nm thick silicon dioxide layer thickness, other Monolayer on the substrate dielectric film thickness measurement test sample at a wavelength of opaque can refer to this method.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. JJF1059.1-2012 Evaluation and Expression of Uncertainty in Measurement

3 Terms and Definitions

The following terms and definitions apply to this document. 3.1 Ellipsometry technique elipsometer Use change in the polarization state of the polarized light beam reflected or transmitted when appearing on the screen and film studies between two media interface or film made An optical method for raw phenomena and their properties. 3.2 Fresnel reflection law fresnellawofreflection When natural light is incident on the interface, can be decomposed into two equal and mutually perpendicular plane polarized light to s indicate normal incidence Surface, p represents a parallel incident surface, and the vibration component s and p components are independent of each other. 3.3 Linearly polarized light linearlypolarizedlight Light vector vibration in one direction only, that is, the propagation of light in the process of vibration of the electric vector is limited to within a defined plane, also known as partial plane Polarized light. 3.4 Elliptically polarized elipticalpolarizedlight The same two frequencies, the vibration direction perpendicular to each other and the spread of synthetic linearly polarized in the same direction, and the endpoint of its electric vector in an inner surface wave An elliptical trajectory is depicted.

4 works

Elliptic functions ρ ellipsometry technique available film showing the reflection film is formed ellipsometry polarization characteristics, can be expressed as the formula (1) and (2). ......

Image     

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