GB/T 30653-2014 English PDF

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GB/T 30653-2014: Test method for crystal quality of Ⅲ-nitride epitaxial layers
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 30653-2014	189	Add to Cart	3 days	Test method for crystal quality of Ⅲ-nitride epitaxial layers	Valid

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Basic data

Standard ID: GB/T 30653-2014 (GB/T30653-2014)
Description (Translated English): Test method for crystal quality of ��-nitride epitaxial layers
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040.20
Word Count Estimation: 8,862
Date of Issue: 12/31/2014
Date of Implementation: 9/1/2015
Regulation (derived from): National Standards Bulletin 2014 No. 33
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This Standard specifies the use of high-resolution X-ray diffraction test �� nitride epitaxial wafer crystal quality. This Standard applies to the oxide substrate (Al2O3, ZnO, etc.) or a semiconductor substrate (GaN, Si, GaAs, SiC, etc.) epitaxially grown

GB/T 30653-2014: Test method for crystal quality of Ⅲ-nitride epitaxial layers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for crystal quality of Ⅲ-nitride epitaxial layers ICS 77.040.20 H21 National Standards of People's Republic of China Ⅲ-nitride epitaxial wafer crystal quality test methods Issued on. 2014-12-31 2015-09-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. Please note that some of the content of this document may involve patents. Distribution of this document Institutions do not assume the responsibility to identify these patents. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Institute of Semiconductors. The main drafters of this standard. Sun Baojuan, Xia Zhao, Wang Junxi, Zeng Yiping, Li Jin Min. Ⅲ-nitride epitaxial wafer crystal quality test methods

1 Scope

This standard specifies the use of high-resolution X-ray diffraction test Ⅲ nitride epitaxial wafer crystalline quality. This standard applies to the oxide substrate (Al2O3, ZnO, etc.) or epitaxial growth on the (GaN, Si, GaAs, SiC, etc.) of a semiconductor substrate Nitride (Ga, In, Al) N monolayer or multilayer heteroepitaxial crystal quality test sheet. The crystalline quality of the test piece may also be other heteroepitaxial The reference standard.

2 Terms and definitions

The following terms and definitions apply to this document. 2.1 Symmetrical diffraction symmetricdiffraction Incident beam and the reflected beam relative to the sample surface normal crystal diffraction occurs in a symmetrical position, the angle of incidence and reflection angle equal. 2.2 Asymmetric diffraction asymmetricdiffraction If the diffraction crystal surface and the sample surface has a angle χ, the incident beam and the reflected beam relative to the sample surface normal crystal in a non-symmetrical position, the angle of incidence Diffraction occurs when the angle of reflection is not equal. 2.3 Skew-symmetric diffraction skewdiffraction Incident beam and the reflected beam relative to the normal of the sample surface in a symmetrical position, while the diffraction crystal surface with respect to the sample surface has a tilt angle χ, this Diffraction occurs when the skew-symmetric diffraction. 2.4 Screw dislocation screwdislocation A certain part of the crystal relative to the rest slip occurs, spiraling atomic planes along an axis, the axis around every week A rising surface atom spacings. In the center of the axis is a screw dislocation. 2.5 Edge dislocation edgedislocation Crystal under the action of shear stress, in part with respect to the other part along a certain crystallographic plane (sliding surface) and grain (sliding direction) to generate bit Shift, thereby forming the extra half plane of atoms, also formed the edge dislocation. 2.6 Rocking curve rockingcurve The 2θB position detector fixed sample (hkl) planes, the front of the detector without the slit, the sample in the vicinity of the diffraction angle Δθ position to shake Pendulum, diffraction intensity will vary with the angle, and ω diffraction intensity curve obtained records.

3 Symbol

The following symbols apply to this document. FWHM FWHM of the diffraction peak at a diffraction peak half high full width. ......

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