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GB/T 29557-2013 English PDF

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GB/T 29557-2013: Surface chemical analysis -- Depth Profiling -- Measurement of sputtered depth
Status: Valid
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 29557-2013314 Add to Cart 3 days Surface chemical analysis -- Depth Profiling -- Measurement of sputtered depth Valid

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Basic data

Standard ID: GB/T 29557-2013 (GB/T29557-2013)
Description (Translated English): Surface chemical analysis -- Depth Profiling -- Measurement of sputtered depth
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: G04
Classification of International Standard: 71.040.40
Word Count Estimation: 16,190
Adopted Standard: ISO/TR 15969-2001.IDT
Regulation (derived from): National Standards Bulletin 2013 No. 10
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies: sputter sputter depth profiling measured depth criteria. This standard applies to divest some combination of ion bombardment of solid samples surface chemical analysis techniques, usually sputter depth of up to a few microns.

GB/T 29557-2013: Surface chemical analysis -- Depth Profiling -- Measurement of sputtered depth

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Surface chemical analysis.Depth Profiling.Measurment of sputtered depth ICS 71.040.40 G04 National Standards of People's Republic of China Surface chemical analysis - Depth profiling Sputter depth measurement (ISO /T R15969.2001, IDT) Issued on. 2013-07-19 2014-03-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard uses the translation method identical with ISO /T R15969.2001 "Surface chemical analysis sputter depth profiling depth measurement." This standard by the National Standardization Technical Committee microbeam (SAC/TC38) and focal points. This standard is drafted by. Zhongshan University, Zhejiang University, Dalian Institute of Chemical Physics. The main drafters of this standard. Chen, Zhang Xun students, Xiefang Yan, GONG force, Zhang Weihong, Sheng Shishan.

Introduction

This standard applies to the following three aspects. a) When the detection signal intensity sputter time (or ion dose density) function to determine the depth ruler sputter profiling. When the unit Sputter depth between the sputtering rate (usually nm/s units). b) enhancement obtained with different instruments depth analysis of comparability of data, to improve the reliability of depth profiling and promoting its industry application. c) as the sputtering depth measurement basis for international standards development. Surface chemical analysis - Depth profiling Sputter depth measurement

1 Scope

This standard specifies the sputter depth profiling measuring the sputtering depth guidelines. This standard applies to combined ion bombardment release surface portion of the solid sample chemical analysis techniques, often sputter depth of up to a few microns.

2 Terms and definitions

The following terms and definitions apply to this document. Note. The term used in this standard basically followed the definition ASTME673-95c [1] of. To define and ISO /TC201/SC1 developed in the previous term Cause, these definitions should be some changes, see reference [2] and [3]. 2.1 Sputter depth sputtereddepth Distance z (m) (the surface perpendicular to the sample surface and the sputtering surface of original sample analysis release a certain amount of material sputtered between Straight), is defined as. z = mA · ρ (1) Where. --- Peeling the sample size m, in kilograms (kg); A --- sputtering area, in square meters (m2); p --- sample density in kilograms per cubic meter (kg/m3). 2.2 Crater depth craterdepth The average distance from the original surface and produce a crater bottom region of the measured signal (perpendicular to the surface). NOTE. Assume the incident ion implantation and residue caused in a direction perpendicular to the surface of the expansion of the sample ( "bump") can be neglected [5], the crater depth is equal to the sputtering depth. If the analysis by measuring outdoor crater depth measured sputter depth, surface reactions (such as oxidation) will increase the crater bottom ridge, which is usually measured arc Pit depth is less than the sputtering depth.

3 Abbreviations

Auger electron spectroscopy AES Augerelectronspectroscopy Atomic force microscopy AFM Atomicforcemicroscopy EDS Energydispersivespectrometry energy dispersive spectroscopy EPMA Electronprobemicroanalysis electron probe microanalysis Focused Ion Beam FIB Focusedionbeam GIXR GrazingincidenceX-rayreflectivity grazing incidence X-ray reflectivity MEIS Mediumenergyionscattering in energy ion scattering spectroscopy
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