GB/T 29505-2013 English PDFUS$669.00 · In stock
Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 29505-2013: Test method for measuring surface roughness on planar surfaces of silicon wafer Status: Valid
Basic dataStandard ID: GB/T 29505-2013 (GB/T29505-2013)Description (Translated English): Test method for measuring surface roughness on planar surfaces of silicon wafer Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H80 Classification of International Standard: 29.045 Word Count Estimation: 29,267 Quoted Standard: GB/T 14264 Regulation (derived from): National Standards Bulletin 2013 No. 6 Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China Summary: This standard specifies the wafer surface roughness measuring instrument commonly used in the outline, interferometer, scattering three methods of measuring principle, measuring equipment and procedures, and provides for partial or entire wafer surface ar GB/T 29505-2013: Test method for measuring surface roughness on planar surfaces of silicon wafer---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.Test method for measuring surface roughness on planar surfaces of silicon wafer ICS 29.045 H80 National Standards of People's Republic of China Flat wafer surface roughness measurement surface Issued on. 2013-05-09 2014-02-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released Table of ContentsIntroduction Ⅲ 1 Scope 1 2 Normative references 1 3 Terms and definitions Method summary 4 2 5 disturbances 3 Equipment 3 6 7 roughness measurement Step 5 8 8 Report Examples Appendix A (normative) roughness measurement specifications and the relevant output 9 Annex B (informative) related to wafer testing and model roughness distribution (from SEMIM40 appendix) 11 References 25ForewordThis standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points. This standard was drafted. Grinm Semiconductor Materials Co., Ltd., China Nonferrous Metals Industry Institute of Standards and Metrology and Quality. The main drafters of this standard. Sun Yan, Li Li, Lu Liyan, Difu Yi to Lei. Flat wafer surface roughness measurement surface1 ScopeThis standard provides a measure of the silicon wafer surface roughness measurement principle common profile gauge interferometer, scatterometer three methods of measuring equipment And procedures and the provisions of the silicon surface or partial scan position standard graphics and roughness of the region as a whole abbreviation definitions. This standard applies to flat wafer surface roughness measurements; can also be used for other types of flat wafer material, but not for the wafer edge Roughness measurement edge region. This standard does not apply to the bandwidth-space wavelength ≤10nm measuring instruments.2 Normative referencesThe following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 14264 semiconductor material terms3 Terms and DefinitionsGB/T 14264 and defined by the following terms and definitions apply to this document. 3.1 Autocorrelation function autocorrelationfunction Strong spectral density function of the Fourier transform. It represents a slippage between the surface profile and by the same contour or lateral movement on its Self-similarity. 3.2 Autocorrelation length autocorrelationlength It requires lateral sliding to the autocorrelation function reduced to a value equal to e-1 multiplied by its sliding value 0. Sometimes the use of 10% or 0 value is defined alternative e-1. 3.3 Bidirectional reflectance distribution function bi-directionalreflectancedistributionfunction; BRDF From one surface to describe the distribution of light scattering to different luminance (irradiance) normalized different light emitting (radiation rate), and approximation Projected per unit solid angle scattering power divided by incident power. 3.4 Nyquist criterion Nyquiscriterion Detecting the shortest wavelength space. It is twice the sampling interval. 3.5 A one-dimensional grating equation one-dimensionalgratingequation According to the most common form, it is an expression of the position of diffraction grating given a one-dimensional sine. 3.6 Power Spectral Density (PSD) function powerspectraldensity (PSD) function A function of surface features, the surface of which the ratio of the square of the Fourier transform of the coefficients, and can be seen as a crude per unit of spatial frequency ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 29505-2013_English be delivered?Answer: Upon your order, we will start to translate GB/T 29505-2013_English as soon as possible, and keep you informed of the progress. The lead time is typically 3 ~ 5 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 29505-2013_English with my colleagues?Answer: Yes. 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