GB/T 28856-2012 English PDF

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GB/T 28856-2012: Silicon piezoresistive pressure-sensitive chip
Status: Valid

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GB/T 28856-2012	439	Add to Cart	4 days	Silicon piezoresistive pressure-sensitive chip	Valid

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Basic data

Standard ID: GB/T 28856-2012 (GB/T28856-2012)
Description (Translated English): Silicon piezoresistive pressure-sensitive chip
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: N05
Classification of International Standard: 17.100
Word Count Estimation: 19,120
Quoted Standard: GB/T 191-2008; GB/T 2829-2002; GB/T 7665-2005
Regulation (derived from): National Standards Bulletin 2012 No. 28
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the silicon piezoresistive pressure sensing chip (hereinafter referred to as sensitive chip) terms and definitions, classifications, basic parameters, requirements, test methods, inspection rules, marking, packaging, transportation

GB/T 28856-2012: Silicon piezoresistive pressure-sensitive chip

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Silicon piezoresistive pressure-sensitive chip ICS 17.100 N05 National Standards of People's Republic of China Silicon piezoresistive pressure sensor chip Issued on. 2012-11-05 2013-02-15 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Table of Contents

Introduction Ⅲ 1 Scope 1 2 Normative references 1 3 Terms and definitions 1 4 Category 1 4.1 electrically isolated from Type 1 4.2 sensitive chip reference pressure sensing chamber type 2 Basic parameters 2 5 5.1 Measuring range 2 5.2 Working medium 2 5.3 Operating temperature range 2 5.4 Incentive Power 2 6 requires 2 6.1 General 2 6.2 Basic performance requirements 2 Test Method 5 7 7.1 Environmental conditions 5 7.2 Electrical connection and appearance 5 7.3 sensing resistor 6 7.4 Leakage current 6 7.5 Breakdown Voltage 6 Isolation voltage 7.6 7 7.7 Zero Offset Voltage 7 7.8 Atmospheric offset voltage 7 7.9 static performance 7 7.10 8 Stability 8 8 Inspection Rules 8.1 Inspection classification 8 8.2 factory inspection 8 8.3 Type inspection 9 9 signs, packaging, transportation and storage 10 9.1 mark 10 9.2 Packaging 10 9.3 Transport 10 9.4 Storage 10 Calculation Method Appendix A (normative) sensor performance indicators 11 A.1 actual calibration feature 11 A.2 least squares linear equation 11 A.3 full scale output (YFS) 12 A.4 nonlinear (ξL) 12 A.5 hysteresis (ξH) 12 A.6 repeatability (ξR) 12 A.7 accuracy (ξ) 13 A.8 zero drift (dz) 13 A.9 thermal zero drift (α) 14 A.10 hot full scale output drift (β) 14

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard proposed by China Machinery Industry Federation. The standard by the China Machinery Industry Federation. This standard was drafted. Shenyang Academy of Instrumentation Science, National Engineering Research Center for Sensors, National Instruments Quality Supervision Component Inspection Center, Kunshan Shuangqiao Sensor Measurement and Control Technology Co., Ltd., Dalian University of Technology, China Electronics Technology Group Corporation 29th Institute, Beijing Xin Connaught Sensing Technology Co., Ltd., Beijing Rip Endress + Hauser Instrument Co., Ltd., Nanjing Wolfowitz days Technology Co., Ltd., China National Instruments Instrument Society sensor Branch of China Instrument Society of Instrument member clubs. The main drafters of this standard. Hui Tang, Liu Qin, Xu Qiuling, YU Zhen Yi, Zhang Zhiguo, Xushu Xia, Yin Bo, Wang Bing, Chen Xinqi, Huang Zhengxing, Wang Wenxiang, Guo Hong, Ningning, Li Yanfu peak. Silicon piezoresistive pressure sensor chip

1 Scope

This standard specifies the silicon piezoresistive pressure sensor chip (hereinafter referred to as sensitive chip) terms and definitions, classification, basic parameters, requirements, testing Methods, inspection rules, marking, packaging, transportation and storage. This standard applies to silicon piezoresistive pressure sensor chip.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 191-2008 Packaging - Pictorial signs GB/T 2829-2002 periodic inspection Sampling procedures and tables (suitable for process stability test) GB/T 7665-2005 sensor generic term

3 Terms and definitions

GB/T 7665-2005 and defined the following terms and definitions apply to this document. 3.1 Piezoresistive effect of silicon material, the pressure change is converted into a resistance change of the pressure-sensitive chip. 3.2 Dielectric isolation dielectricisolation With an insulating layer (such as oxide) around the sensitive monolithic semiconductor chip components, so that the chip in the form of one or more elements among Into electrical isolation. (Element comprises a flexible diaphragm) 3.3 Remainder foreignmaterial A pressure of 80kPa ~ 100kPa air blowing small foreign body can not afford. 3.4 Passivation layer passivationlayer Grown or deposited directly on the chip surface of the silicon oxide, silicon nitride, or other insulating material. Category 4 4.1 electrically isolated Type Electrically isolated by type into. --- PN junction isolation; --- Dielectric isolation. ......

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