GB/T 20228-2021 English PDF

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GB/T 20228-2021: Gallium arsenide single crystal
Status: Valid

GB/T 20228: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 20228-2021	189	Add to Cart	3 days	Gallium arsenide single crystal	Valid
GB/T 20228-2006	239	Add to Cart	3 days	Gallium arsenide single crystal	Obsolete

Similar standards

GB/T 12963   GB/T 25074   SJ/T 11488   GB/T 20230   GB/T 20229   

Basic data

Standard ID: GB/T 20228-2021 (GB/T20228-2021)
Description (Translated English): Gallium arsenide single crystal
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H83
Word Count Estimation: 10,153
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 20228-2021: Gallium arsenide single crystal

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Gallium arsenide single crystal ICS 29.045 CCSH83 National Standards of People's Republic of China Replace GB/T 20228-2006 Gallium arsenide single crystal Released on 2021-05-21 2021-12-01 implementation State Administration of Market Supervision and Administration Issued by the National Standardization Management Committee

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document replaces GB/T 20228-2006 Gallium Arsenide Single Crystal. Compared with GB/T 20228-2006, except for structural adjustment and editing In addition to the changes, the main technical changes are as follows. a) The scope of application of the standard has been changed (see Chapter 1, Chapter 1 of the.2006 edition); b) Added normative reference document GB/T 13388 (see Chapter 2); c) Deleted the definition of single crystal and ingot in "Terms and Definitions" (see Chapter 3 of the.2006 edition); d) The classification by growth method has been deleted (see 4.1.2 in the.2006 edition), and the classification by diameter has been added (see 4.2.2); e) The representation method of single crystal ingots has been deleted (see 4.3 in the.2006 edition); f) The "single crystal" and "single crystal ingot" in the original document are unified as "gallium arsenide single crystal" (see Chapter 5, Chapter 5 of the.2006 edition); g) The size requirements are changed (see 5.1, 5.3.2 of the.2006 edition); h) The requirements for surface quality have been changed (see 5.2, 5.3.3 of the.2006 edition); i) The requirements of the reference surface are changed (see 5.3, 5.3.1 of the.2006 edition), and the corresponding content in the test method and inspection rules has been added (See 6.3, Chapter 7); j) The requirement of crystal orientation deviation has been added (see 5.4); k) The requirements for Hall mobility and resistivity of non-doped semi-insulating gallium arsenide single crystals are changed (see 5.5, 5.1.2 of the.2006 edition); l) The requirement for non-uniformity of cross-sectional resistivity (see 5.5) and its calculation method (see 6.5) have been added; m) The electrical performance requirements of C-doped semi-insulating gallium arsenide single crystal have been added (see 5.5); n) The requirements for dislocation density have been changed (see 5.6, 5.2 in the.2006 edition); o) The contents of group batching, inspection items, sampling, and inspection result judgment have been changed (see 7.2~7.4, 7.3~7.5 of the.2006 edition); p) The content of the accompanying documents has been changed (see 8.5, 8.3 of the.2006 edition); q) Added "Order Form Content" (see Chapter 9). Please note that some of the contents of this document may involve patents. The issuing agency of this document is not responsible for identifying patents. This document is composed of the National Semiconductor Equipment and Material Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Material Standards The material subcommittee of the Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed. Drafting organizations of this document. Yunnan Zhongke Xinyuan Crystal Material Co., Ltd., Yunnan Lincang Xinyuan Germanium Industry Co., Ltd., Non-ferrous Metal Technology Technology Economic Research Institute Co., Ltd., Guangdong Xiandao Advanced Materials Co., Ltd., Youyan Optoelectronics New Materials Co., Ltd., Yiwu Li Maixin Materials Co., Ltd. The main drafters of this document. Hui Feng, Lin Zuoliang, Pu Shikun, Li Suqing, Yin Guowen, Chen Weidi, Zhou Tiejun, Dong Rukun, Luo Aibin, Lin Quan, Ma Yingjun, Bin Qixiong, Pi Kunlin. This document was first published in.2006, and this is the first revision. Gallium arsenide single crystal

1 Scope

This document specifies the technical requirements, test methods, inspection rules, markings, packaging, transportation, storage, accompanying documents and orders for gallium arsenide single crystals. The contents of the manifest. This document is suitable for liquid-sealed straight pull method (LEC), vertical gradient coagulation method (VGF), vertical Bridgman method (VB) growth, for preparation The gallium arsenide single crystals of optoelectronics, microelectronics and other devices are not suitable for the gallium arsenide single crystals grown by the horizontal Bridgman method (HB).

2 Normative references

The contents of the following documents constitute the indispensable clauses of this document through normative references in the text. Among them, dated quotations Only the version corresponding to that date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to This document. GB/T 1555 Method for determination of crystal orientation of semiconductor single crystals GB/T 4326 Extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method GB/T 8760 Test method for dislocation density of gallium arsenide single crystal GB/T 13388 Crystallographic orientation X-ray test method of silicon wafer reference plane GB/T 14264 Terminology of Semiconductor Materials GB/T 14844 Semi-conductor material designation method SJ/T 11488 Semi-insulating gallium arsenide resistivity, Hall coefficient and mobility test method

3 Terms and definitions

The terms and definitions defined in GB/T 14264 are applicable to this document.

4 Grades and classifications

4.1 Grade The gallium arsenide single crystal grades are expressed in accordance with the regulations of GB/T 14844. 4.2 Classification 4.2.1 GaAs single crystals are divided into n-type, p-type and semi-insulating type (SI type) according to the conductivity type. 4.2.2 GaAs single crystal is divided into 50.8mm, 76.2mm, 100.0mm, 150.0mm,.200.0mm according to the diameter.

5 Technical requirements

5.1 Dimensions 5.1.1 The diameter and allowable deviation of the spheronized gallium arsenide single crystal should meet the requirements of Table 1.Exceed the diameter and allowable deviation listed in Table 1 or its ......

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