GB/T 13388-2009 English PDFUS$259.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 13388-2009: Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques Status: Valid GB/T 13388: Historical versions
Basic dataStandard ID: GB/T 13388-2009 (GB/T13388-2009)Description (Translated English): Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H80 Classification of International Standard: 29.045 Word Count Estimation: 11,176 Date of Issue: 2009-10-30 Date of Implementation: 2010-06-01 Older Standard (superseded by this standard): GB/T 13388-1992 Adopted Standard: SEMI MF847-0705, MOD Regulation (derived from): National Standard Approval Announcement 2009 No.12 (Total No.152) Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China Summary: This standard specifies the method for measuring the angle ��. �� angle is perpendicular to the reference plane on the basis of circular silicon wafer surface crystal orientation between the reference plane and angle. This standard applies to the reference surface of the wafer length should comply with GB/T 12964 and GB/T 12965 of the requirements, and silicon angle deviation should be within -5 �� to +5 �� range. GB/T 13388-2009: Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques ICS 29.045 H80 National Standards of People's Republic of China Replacing GB/T 13388-1992 Wafer reference surface crystallographic orientation of the X-ray test method Posted 2009-10-30 2010-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released ForewordThis revised standard adopts SEMIMF847-0705 "reference surface of silicon crystal to X-ray testing methods." This standard compared with SEMIMF847-0705, with the following exceptions. --- Part of the international standard SEMI standard referenced by direct reference to corresponding our standards; --- The main form content according to GB/T 1.1 requirements choreography. This standard replaces GB/T 13388-1992 "wafer reference surface crystallographic orientation of the X-ray test method." This standard compared with GB/T 13388-1992, the main changes are as follows. Method 2 --- --- adds Laue back reflection X-ray method; --- Cancel specific provisions diameter and length of the reference surface of the wafer; --- GB prior to its amendment states that "the process does not apply to silicon in a predetermined orientation with the reference surface and the silicon surface perpendicular to the plane Between the projection and the wafer surface normal angle of not less than 3 ° measured wafer "; and SEMIMF847-0705, only for corner Degree deviate from -5 ° to + 5 ° silicon; --- Normative references increased; --- Modify the precision used SEMIMF847-0705 through a silicon wafer 50 times (25 times per side) measurements obtained This test instrument to a single aspect of the reproduction of a single operator Evaluation. 1-α α calculated value of distribution of 1.94 '; --- Increasing the relevant safety provisions. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) proposed. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Grinm Semiconductor Materials Co., Ltd. The main drafters of this standard. Sun Yan, Lu Liyan, Du Juan, Difu Yi, Gao rust. This standard replaces the standards previously issued as follows. --- GB/T 13388-1992. Wafer reference surface crystallographic orientation of the X-ray test method Objective 1 1.1 silicon reference plane crystallographic orientation (crystal orientation) is an important acceptance of material parameters. In the semiconductor device process, the general use of ginseng Test surface to calibrate the semiconductor device geometry array crystallographic planes of the crystal orientation and consistency. 1.2 silicon reference plane (located at the edge of the film) to the crystal surface is crystallographic orientation reference surface, the reference plane is usually defined as a related Low-index planes, such as the (110) plane, in this case, the reference surface of the crystal to be used for its deviation angle low index planes to describe. 1.3 This standard consists of two measuring methods. 1.4 Two test methods can process development and quality assurance for. But in the process of interlaboratory precision (reproducibility limit) Before determining if the parties have not successfully completed the correlation between the two methods, both supply and demand is not recommended to use this method.2 range2.1 standard specifies the method for measuring the angle α, α angle perpendicular to the reference plane of the crystal surface of silicon wafers circular reference to the reference plane Kakuma. 2.2 standard applies to the reference wafer surface length should be consistent with GB/T 12964 and GB/T 12965 provisions, and the angle of silicon Should deviate from -5 ° to + 5 ° range. Crystal 2.3 by the standard assay to directly dependent on the accuracy of the reference surface of the reference bezel and bezel with matching accuracy with respect to the X-ray Alignment accuracy. 2.4 Standard consists of the following two methods. Test Method 1 --- X-ray diffraction edge Test Method 2 --- Laue back reflection X-ray method 2.4.1 a non-destructive testing methods, in order to make the wafer with respect to the unique X-ray goniometer positioning, in addition to the use of special silicon Jig outside, similar to the GB/T 1555 Test Method 1. Compared with the back reflection Laue method, the technique for measuring the reference surface of the crystal to get higher Accuracy. 2.4.2 Method 2 is non-destructive to the reference surface with respect to the X-ray beam positioning, in addition to using "instant" film and special fixtures In addition, with ASTME82 and DIN50433 test methods - Part 3 is similar. Although Method 2 is more simple and fast, but does not have fine method 1 Degree, equipment and fixtures because it uses less accurate and low cost. Method 2 provides a measure of the permanent film recording. NOTE. explanation Laue photograph can get information wafer alignment errors. However, this is beyond the scope of the test method. This interpretation is willing to users, To see ASTME82 and DIN50433 test methods Part 3 or standard X-ray textbooks. Because you can use a different fixture methods 2 is also applicable to the determination of the orientation of the wafer surface. 2.5 Standard values \u200b\u200bare in metric units, the value of imperial units in parentheses for information purposes only. NOTE. This standard does not address safety issues, if any, associated with the use of standards. Standard before use, to establish appropriate safety and security measures and determining regulation Applications chapter system is the standard user's responsibility.3 Limitations3.1 Reference surface flatness can affect the alignment accuracy of the reference plane and the reference baffle. In the section reference plane is raised (less common situation Conditions), the reference surface crystal orientation may not be unique. More commonly, the reference surface along a plane perpendicular to the wafer surface with two straight reference the baffle Intersect at two points. In this case, the crystal orientation is measured perpendicular to the wafer surface by two plane crystal orientation. In the latter case, when the Between the reference plane and the reference bezel aligned to the measured crystal silicon is obtained in a subsequent process of crystal orientation. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 13388-2009_English be delivered?Answer: Upon your order, we will start to translate GB/T 13388-2009_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 13388-2009_English with my colleagues?Answer: Yes. 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