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GB/T 30655-2014: Test methods for internal quantum efficiency of nitride LED epitaxial layers Delivery: 9 seconds. True-PDF full-copy in English & invoice will be downloaded + auto-delivered via email. See step-by-step procedure Status: Valid
Similar standardsGB/T 30655-2014: Test methods for internal quantum efficiency of nitride LED epitaxial layers---This is an excerpt. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.), auto-downloaded/delivered in 9 seconds, can be purchased online: https://www.ChineseStandard.net/PDF.aspx/GBT30655-2014GB NATIONAL STANDARD OF THE PEOPLE’S REPUBLIC OF CHINA ICS 77.040.99 H 21 Test Methods for Internal Quantum Efficiency of Nitride LED Epitaxial Layers Issued on: DECEMBER 31, 2014 Implemented on: SEPTEMBER 1, 2015 Issued by. General Administration of Quality Supervision, Inspection and Quarantine; Standardization Administration of the People’s Republic of China. Table of ContentsForeword... 3 1 Scope... 4 2 Normative Reference... 4 3 Terms and Definitions... 4 4 Symbols... 5 5 Method Principle... 6 6 Instrument... 9 7 Test Environment... 10 8 Specimens... 10 9 Test Procedure... 10 10 Calculation and Presentation of Test Results... 12 11 Precision... 14 12 Quality Assurance and Control... 14 13 Test Report... 14 Test Methods for Internal Quantum Efficiency of Nitride LED Epitaxial Layers1 ScopeThis Standard specifies the test method for the internal quantum efficiency of III-V nitride LED epitaxial layers. This Standard is applicable to the test of the internal quantum efficiency of quantum well LEDs based on III-V nitrides.2 Normative ReferenceThe following documents are essential to the application of this Document. For the dated documents, only the versions with the dates indicated are applicable to this Document; for the undated documents, only the latest version (including all the amendments) is applicable to this Document. GB/T 6379 Accuracy (trueness and precision) of measurement methods and results3 Terms and DefinitionsFor the purposes of this Document, the following terms and definitions apply. 3.1 Radiative recombination During the transition of electrons from a high-energy state to a low-energy state, a certain amount of energy shall be released when electrons and holes recombine. If the energy is released in the form of photons, this recombination is called radiative recombination. 3.2 Nonradiative recombination During the transition of electrons from a high-energy state to a low-energy state, a certain amount of energy shall be released when electrons and holes recombine. The recombination that releases energy in ways other than photon radiation is called nonradiative recombination. 3.3 Extraction efficiency The ratio between the number of photons emitted by a light-emitting diode per unit time and the number of photons generated by radiative recombination in the active area. 3.4 External quantum efficiency The ratio OF the number of photons emitted by the number of injected carriers per unit time TO the number of injected carriers. 3.5 Internal quantum efficiency Under certain injection conditions, the ratio of the number of photons generated by radiative recombination per unit time to the total number of composite carriers injected per unit time. 3.6 Injection efficiency The ratio between the number of composite carriers injected into the active area and the total number of injected carriers per unit time under certain injection conditions. 3.7 Exciton An electron-hole pair that is bound together by the Coulomb interaction. 3.8 Electroluminescence A physical phenomenon in which a material emits light through electrical injection. 3.9 Photoluminescence A physical phenomenon in which a material emits light through light stimulation.4 SymbolsThe following symbols are applicable to this Document. N. Carrier concentration. EL. Electroluminescence. PL. Photoluminescence. IPL. PL integrated intensity. Plaser. Laser power. ηEQE. External quantum efficiency. ηIQE. Internal quantum efficiency.7 Test EnvironmentUnless otherwise specified, the test shall be carried out under the following conditions. a) Ambient temperature. 23℃±5℃; b) Relative humidity. ≤90%; c) Atmospheric pressure. 86kPa~106kPa; d) The test environment shall be free of mechanical vibration, electromagnetic, light, chemical corrosion and other interference that may affect the test accuracy.8 SpecimensThe test specimens shall be polished wafers with clean wafer surfaces.9 Test Procedure9.1 Preparation of test Before the test, check and make sure that all instruments in the test system are in good conditions. 9.2 Test steps 9.2.1 The steps for testing the internal quantum efficiency by the ratio of the integrated intensity of low-temperature and room-temperature photoluminescence spectra are as follows. a) Turn on the laser and check whether it works properly; b) Turn on the power switches of the monochromator and detector in turn and check whether they work properly; c) Calibrate the monochromator by a standard light source; d) Install the sample on the sample rack; then install the vacuum protective cover; evacuate the vacuum; start circulating cooling water and compressor; wait until the temperature drops below 20K, and start measuring after stabilizing at this temperature for 30 min; e) Use the data acquisition system to measure the low-temperature photoluminescence spectrum by dedicated software; f) Then use resistance heating to raise the temperature to room temperature (295K) and stabilize for 30 min, and continue to use the data acquisition system to measure the room- temperature photoluminescence spectrum by dedicated software; g) Turn off power supplies of all the instruments after the test is completely finished; h) Calculate the internal quantum efficiency by software. 9.2.2 The steps for testing the internal quantum efficiency by the integral intensity of the photoluminescence spectrum with constant temperature-variable excitation density are as follows. a) Turn on the laser and check whether it works properly; b) Turn on the power switches of the monochromator and detector in turn to check whether they work properly; c) Calibrate the monochromator with a standard light source; if the room temperature test is used, proceed directly to step e); if the high and low temperature test is used, proceed to step d); d) Install the sample on the sample rack; then install the vacuum protective cover; evacuate the vacuum; start the circulating cooling water and compressor; wait until the temperature reaches the set temperature, and start the measurement after it stabilizes at this temperature for 30 min; e) Change the laser excitation density by inserting attenuation plates with different attenuation multiples in the laser optical path; and then use the data acquisition system to measure the photoluminescence spectra under different laser excitation densities by dedicated software; f) Then restore the temperature to room temperature (295K) through resistance heating or cooling machine; and after stabilizing for 30 min, turn off power supplies of all the instrument; g) Calculate the internal quantum efficiency by software. 9.2.3 The steps to infer the internal quantum efficiency from the external quantum efficiency by the light extraction model are as follows. a) Turn on the switches of power supply and detector power in turn to check whether they are working properly; b) Calibrate the integrating sphere with a standard light source; c) Install the sample on the sample rack; turn on the power supply to the LED; start measuring the light power of the LED; and calculate the external quantum efficiency by dividing it by the input power (the product of current and voltage); ......Source: Above contents are excerpted from the full-copy PDF -- translated/reviewed by: www.ChineseStandard.net / Wayne Zheng et al. 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