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Std ID |
Description (Standard Title) |
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SJ 1170-1977
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(Y31 phosphor)
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SJ 1185-1977
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Color television test pattens (Provisional)
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SJ 119-1973
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(Chinese Industry Standard)
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SJ 119-1986
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Rotary wafer switches (low current rating), with central mounting, maximum number of positions; 12, maximum diameter: 55mm, Type KX01
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SJ 1224-1977
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(General technical conditions of vacuum evaporation equipment)
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SJ 1225-1977
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Detail specification for germanium detector diodes, Type 2AP11~2AP17
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SJ 1226-1977
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Detail specification for germanium detector diodes, Type 2AP9~2AP10
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SJ 1227-1977
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Detail specification for germanium detector diodes, Type 2AP1~2AP8, 2AP21 and 2AP27
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SJ 1228-1977
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Detail specification for germanium wideband detector diodes, Type 2AP30~2AP31
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SJ 1229-1977
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Detail specification for germanium switching diodes, Type 2AK1~20
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SJ 1230-1977
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Methods of measurement for high frequency rectified current of germanium detector diodes
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SJ 1231-1977
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(Germanium switching diode reverse recovery time of the test method)
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SJ 123-1965
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(Chinese Industry Standard)
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SJ 1233-1977
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(CB10 polystyrene capacitor)
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SJ 1234-1977
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(DB11 polystyrene capacitor)
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SJ 1241-1977
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Generic specification for paper dielectic capacitors
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SJ 1242-1977
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(CZ11 type paper capacitor)
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SJ 1243-1977
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(CZ12 type paper capacitor)
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SJ 1244-1977
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(CZ30 seal paper capacitor)
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SJ 1245-1977
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(CZ31 low-sealing paper capacitor)
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SJ 1246-1977
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(CZ32 seal paper capacitor)
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SJ 1247-1977
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Hermetically sealed paper dielectric capacitors for Type CZ40
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SJ 1248-1977
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Hermetically sealed paper dielectric capacitors for Type CZ41
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SJ 1249-1977
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Hermetically sealed high-voltage paper dielectric capacitors for Type CZ82
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SJ 1263-1977
|
XED/XCD-type C-cores for single-phase transformers
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SJ 1267-1977
|
Thermal resistance measurements of sinks for semiconductor devices under natural air cooling conditions
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SJ 1269-1977
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Through-hole glass power insulators, Type FBJ
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SJ 1270-1977
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Through-hole glass insulators
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SJ 1271-1977
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(Chinese Industry Standard)
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SJ 1274-1977
|
Diamond wortle
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SJ 1276-1977
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Techical requirements for quality inspection of metallic coatings and chemically treated layers
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SJ 1277-1977
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Quality inspection rules for the acceptance of metallic coatings and chemically treated layers
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SJ 1278-1977
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Inspection methods appearance of metallic coatings and chemically treated layers
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SJ 1279-1977
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Test methods for metallic coatings
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SJ 1280-1977
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Test methods for porosity of metallic coatings
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SJ 1281-1977
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Test methods for thickness of metallic coatings and chemically treated layers
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SJ 1282-1977
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Test methods for adhesion of metallic coatings
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SJ 1283-1977
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Test methods for corrosion of metallic coatings and chemically treated layers
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SJ 1284-1977
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Methods for evaluation of corrosion test results for metallic coatings and chemically treated layers
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SJ 1285-1977
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Test methods for electric insulating property of aluminium alloy anodizing
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SJ 1286-1977
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Electronic tubes, Type FU-105Z
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SJ 1287-1977
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Electronic tubes, Type FU-101F and F-101Z
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SJ 1370-1978
|
(CBM 443 (403) BF type FM AM four with variable capacitor dielectric film)
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SJ 1372-1978
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Dimension tolerances for moulding plastic parts
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SJ 1373-1978
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(Fax type designation)
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SJ 1374-1978
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(Teletype Model naming)
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SJ 1381-1978
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Structure and technology of test diode
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SJ 1382-1978
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Electronic tubes, Type FU-822Z (F)
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SJ 1383-1978
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Electronic tubes, Type FU-104Z (F)
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SJ 1385-1978
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General specification for noise-generator diodes and gas discharge noise tubes
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SJ 1386-1978
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Measurement conditions for noise-generator diodes and gas discharge noise tubes
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SJ 1387-1978
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Methods of measurement for filament current and filament voltage of noise-generator diodes
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SJ 1388-1978
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Methods of measurement for anode conductance of noise-generator diodes
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SJ 1389-1978
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Methods of measurement for diodes leakage current between electrodes of noise-generator diodes
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SJ 1390-1978
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Methods of measurement for nonliearity factor of excess noise power of noise-generator diodes
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SJ 1391-1978
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Methods of measurement for voltage standing wave ratio on cold conditions of noise-generator diodes
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SJ 1392-1978
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Methods of measurement for excess noise power of noise-generator diodes
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SJ 1393-1978
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Methods of measurement for cathode preheating time of gas discharge noise tubes
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SJ 1394-1978
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Methods of measurement for firing voltage of gas discharge noise tubes
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SJ 1395-1978
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Methods of measurement for anode current and tube voltage drop of gas discharge noise tubes
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SJ 1396-1978
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Methods of measurement for voltage standing wave ratio of gas discharge noise tubes
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SJ 1397-1978
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Methods of measurement for decaying characteristic of gas discharge noise tubes
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SJ 1398-1978
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Methods of measurement for excess noise ratio and nonstationary characteristic of gas discharge noise tubes
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SJ 1405-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA1
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SJ 1406-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA96
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SJ 1407-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA4
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SJ 1408-1978
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Detail specification for silicon NPN high frequency high power transistors, Type 3DA101
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SJ 1409-1978
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Detail specification for silicon NPN high-frequency high pwer transistors, Type 3DA3
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SJ 1410-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA98
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SJ 1411-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA5
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SJ 1412-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA14
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SJ 1413-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA2
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SJ 1414-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA102
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SJ 1415-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA28
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SJ 1416-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA100
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SJ 1417-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA103
|
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SJ 1418-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA10
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SJ 1419-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA18
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SJ 1420-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA104
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SJ 1421-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA22
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SJ 142-1978
|
(Electronic equipment - General technical requirements)
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SJ 1422-1978
|
Detail specificaiton for silicon NPN high-frequency high power transistors, Type 3DA37
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SJ 1423-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA32
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SJ 1424-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA105
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SJ 1425-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA106
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SJ 1426-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA21
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SJ 1427-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA92
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SJ 1428-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA107
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SJ 1429-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA108
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SJ 1430-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA89
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SJ 1431-1978
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Detail specification for silicon NPN high-frequency high power transistors, Type 3DA39
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SJ 143-1965
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(General technical requirements and test methods for ceramic parts are silver)
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SJ 1436-1978
|
Pulsed magnetron, Type CKM-104
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SJ 1437-1978
|
Pulsed magnetron, Type CKM-104B
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SJ 1438-1978
|
Pulsed magnetron, Type CKM-114
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SJ 1439-1978
|
Pulsed magnetron, Type CKM-114B
|
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SJ 1444-1978
|
(Chinese Industry Standard)
|
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SJ 1445-1978
|
(Chinese Industry Standard)
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SJ 1446-1978
|
(Chinese Industry Standard)
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SJ 1447-1978
|
(Chinese Industry Standard)
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