YS/T 985-2014 English PDF

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YS/T 985-2014: Polished reclaimed silicon wafers
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
YS/T 985-2014	339	Add to Cart	3 days	Polished reclaimed silicon wafers	Valid

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Basic data

Standard ID: YS/T 985-2014 (YS/T985-2014)
Description (Translated English): Polished reclaimed silicon wafers
Sector / Industry: Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard: H80
Classification of International Standard: 29.045
Word Count Estimation: 13,174
Date of Issue: 10/14/2014
Date of Implementation: 4/1/2015
Quoted Standard: GB/T 1550; GB/T 1554; GB/T 1555; GB/T 1557; GB/T 1558; GB/T 2828.1; GB/T 4058; GB/T 6616; GB/T 6618; GB/T 6619; GB/T 6620; GB/T 6621; GB/T 6624; GB/T 11073; GB/T 12962; GB/T 12964; GB/T 13387; GB/T 13388; GB/T 14140; GB/T 14144; GB/T 14264; GB/T 14844; GB
Adopted Standard: SEMI M38-0307, MOD
Regulation (derived from): People's Republic of China Ministry of Industry and Information Technology Notice 2014 No. 63; Industry Standard Filing Notice 2014 No. 12 (Overall No. 180)
Issuing agency(ies): Ministry of Industry and Information Technology
Summary: This Standard specifies the recovered piece of silicon polishing requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate and orders (or contract) content. This Standard applies to a user-supplied or r

YS/T 985-2014: Polished reclaimed silicon wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Polished reclaimed silicon wafers ICS 29.045 H80 People's Republic of China Nonferrous Metals Industry Standard Polished silicon chip recovery Issued on. 2014-10-14 2015-04-01 implementation Ministry of Industry and Information Technology of the People's Republic of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This revised standard adopts SEMIM38-0307 "polished silicon chip recovery norms," the existence of this technology compared to standard and SEMIM38-0307 Differences in terms of these differences has been involved in a single vertical line through its outer margin position (|) have been identified. Content and The main difference lies in SEMIM38-0307. --- Using only SEMIM38-0307 in within about 100mm, 125mm, 150mm and 200mm silicon polished recycled sheet Yung, delete the original standard about 50.8mm, 76.2mm and 300mm diameter polished silicon chip recycling content (including Appendix 1 and Appendix 2). --- The SEMIM38-0307 Table 1 and Table 2 on 100mm, 125mm, 150mm and 200mm polished silicon recycling Specification sheet merge to form this standard in Table 1. --- Prepared according to our standard habits of typesetting, and the technical requirements of the table in advance. This standard by the national non-ferrous metals Standardization Technical Committee (SAC/TC243) centralized. This standard is drafted by. Zhejiang Jinrui Hong Technology Co., Ltd. Participated in the drafting of this standard. Yes REVIEW Semiconductor Materials Co., Ltd., Hangzhou Haina Semiconductor Co., universal silicon peak Electronics Stocks Parts Co., Shanghai Material Co., Ltd. co-crystal silicon. The main drafters of this standard. He Liangen, Dan, Xu Feng, Zhang Haiying, Sun Yan, Cao Zi, Wang Feiyao, Chunlan floor, Xu Xinhua. Polished silicon chip recovery

1 Scope

This standard specifies the polished silicon chip recovery requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate and Order Manifest (or contract) content. This standard applies to the user or a third party from recovering silicon sheet (including 100mm, 125mm, 150mm and 200mm single or double polished silicon wafer or epitaxial wafer unpolished) single-sided polished silicon wafers by polishing preparation. Products are mainly used in machine Mechanical, furnace process, particles and lithography monitoring sheet. In addition, consumers should pay attention to the thermal history of the silicon chip recovery, body and surface sediment contamination Happening.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 1550 extrinsic conductivity type semiconductor material testing methods GB/T 1554 crystallographic perfection of silicon by preferential etch test methods GB/T 1555 to the measurement method of a semiconductor single crystal GB/T 1557 interstitial oxygen content in the silicon crystal infrared absorption measurement method GB/T 1558-generation silicon-carbon atom content of the infrared absorption measurement method GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan GB/T 4058 Test Method polished silicon oxide induced defects GB/T 6616 resistivity of semiconductor silicon and silicon thin film sheet resistance test method of non-contact eddy current method GB/T 6618 wafer thickness and total thickness variation of test methods GB/T 6619 wafer curvature testing methods GB/T 6620 wafer warpage non-contact test method GB/T 6621 Test Method for wafer surface flatness GB/T 6624 polished silicon surface quality by visual inspection Methods of measurement GB/T 11073 radial resistivity variation on silicon GB/T 12962 monocrystalline silicon GB/T 12964 monocrystalline silicon polished wafer GB/T 13387 and other electronic materials silicon wafer reference surface length measurement method GB/T 13388 wafer reference surface crystallographic orientation of the X-ray test method GB/T 14140 wafer diameter measuring method GB/T 14144 interstitial oxygen content in the silicon crystal radial variation measurement method GB/T 14264 semiconductor material terms GB/T 14844 semiconductor material grades that way GB/T 19921 Test Method polished silicon surface of the particles GB/T 19922 flatness of polished silicon wafers local non-contact detection method GB/T 24575 silicon and silicon wafer surface Na, Al, K, and Fe secondary ion mass spectrometry test methods ......

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