YS/T 840-2025 English PDF

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
YS/T 840-2025	RFQ	ASK	3 days	Renewable silicon raw materials	Valid
YS/T 840-2012	189	Add to Cart	3 days	Classification and technical specification for renewable crystal silicon	Valid

Basic data

Standard ID: YS/T 840-2025 (YS/T840-2025)
Description (Translated English): Renewable silicon raw materials
Sector / Industry: Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard: H82
Classification of International Standard: 29.045
Date of Issue: 2025-04-10
Date of Implementation: 2025-11-01
Older Standard (superseded by this standard): YS/T 840-2012
Issuing agency(ies): Ministry of Industry and Information Technology

YS/T 840-2012: Classification and technical specification for renewable crystal silicon

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Classification and technical specification for renewable crystal silicon ICS 77.150.99 H68 People's Republic of China Nonferrous Metals Industry Standard Renewable silicon material classification and technical conditions Issued on. 2012-11-07 2013-03-01 implementation Ministry of Industry and Information Technology of the People's Republic of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard by the national non-ferrous metals Standardization Technical Committee (SAC/TC243) centralized. This standard was drafted. Xi'an Longji Silicon Materials Co., Ltd. The main drafters of this standard. Li Zhenguo, Zhongbao Shen, Zhao Wu, Qun community. This standard is the first release. Renewable silicon material classification and technical conditions

1 Scope

This standard specifies the technical conditions for the regeneration of silicon material and classification, test methods, inspection rules, and packaging, labeling, transportation, storage, order Such as single. This standard applies to generated from the production, processing, use silicon process recyclable material, including sources for the production of solar grade silicon In addition to excessive carbon crystal carbon electrode polysilicon (the first carbon material), crystalline silicon material end to end, side leather, crucible base material, crystalline silicon specimens native type scrap silicon wafers and the like.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 1550 extrinsic conductivity type semiconductor material testing methods GB/T 1551 silicon single crystal resistivity measuring method GB/T 1558 silicon substitutional atomic carbon content by infrared absorption method GB/T 14264 semiconductor material terms Photoluminescence test method GB/T 24574 Silicon Crystal Ⅲ-Ⅴ family impurities GB/T 24579 acid leach atomic absorption spectrometry polysilicon surface metal contamination Measurement Silicon Crystal Ⅲ GB/T 24581 cryogenic Fourier transform infrared spectroscopy, test methods Ⅴ family impurities GB/T 24582 acid leach - Inductively Coupled Plasma Mass Spectrometry polysilicon surface of the metal impurity SEMIPV1 solar grade silicon Determination of trace elements in high resolution glow discharge spectrometry

3 Terms and Definitions

GB/T 14264 and defined by the following terms and definitions apply to this document. 3.1 Carbon electrode polysilicon (the first carbon material) carbonendspolysilicon In the polysilicon production process, carbon electrode surrounded by a U-shaped polycrystalline silicon rod around, stick with irregular shaped graphite polysilicon material. 3.2 Monocrystalline silicon material end to end monocrystalinetopandtail Head and tail cone during the drawing process of the formation of silicon rods. Including single crystal pulling polycrystalline silicon rod and bit error failures resulting single crystal. 3.3 Pot bottom material potscrap In the process of drawing a monocrystalline silicon rod, the residual quartz crucible silicon material. 3.4 Crystalline silicon specimens testsiliconmaterial The detection and evaluation of crystalline silicon rods as specimens for testing. 3.5 Native type scrap silicon brokenwafer In the silicon rod cutting, grinding or polishing of silicon failure generated in the process. ......

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