YS/T 839-2012 English PDF

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YS/T 839-2012: Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry
Status: Valid

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YS/T 839-2012	289	Add to Cart	3 days	Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry	Valid

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Basic data

Standard ID: YS/T 839-2012 (YS/T839-2012)
Description (Translated English): Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry
Sector / Industry: Nonferrous Metallurgy Industry Standard (Recommended)
Classification of Chinese Standard: H68
Classification of International Standard: 77.120.99
Word Count Estimation: 11,169
Regulation (derived from): Ministry of Industry and Information Technology Bulletin No. 55 of 2012; industry standard filing Notice 2013 No. 1 (Total No. 157);
Issuing agency(ies): Ministry of Industry and Information Technology
Summary: This standard specifies test methods using ellipsometry measurements grown or deposited on the silicon substrate insulator film thickness and refractive index method. This standard applies to no absorption wavelength of the test film and the substrate on

YS/T 839-2012: Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for measurement of insulator thickness and refractive index on silicon substrates by ellipsometry ICS 77.120.99 H68 People's Republic of China Nonferrous Metals Industry Standard An insulator film on a silicon substrate thickness and refractive index Elliptically polarized test method Issued on. 2012-11-07 2013-03-01 implementation Ministry of Industry and Information Technology of the People's Republic of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard by the national non-ferrous metals Standardization Technical Committee (SAC/TC243) centralized. This standard was drafted. China Institute of Metrology, there is research semiconductor material Co., Semi Leber Trading (Shanghai) Co., the company. The main drafters of this standard. Gao Ying, Wu Bin, Sun Yan, Xu Jiping, Xuzi Liang, Huang Li. An insulator film on a silicon substrate thickness and refractive index Elliptically polarized test method

1 Scope

1.1 The method specifies the insulator film thickness measured by ellipsometry Test grown or deposited on the silicon substrate and the refractive index method. 1.2 test method is applicable to the film and the substrate without absorption wavelength of the light-wavelength testing, and it is known to test the substrate at a wavelength of refraction Measuring the insulator film thickness and refractive index and extinction coefficient. For non-insulator film, when certain conditions are met before the present method.

2 Method summary

2.1 Instrument assembly shown in Figure 1. Since the light emitted from the monochromator after the polarizer is converted to linearly polarized light. 2.2 compensator set the angle -45 ° (or 315 °), the linearly polarized light into elliptically polarized light. In to see the beam incident surface (Looking A light source), the counterclockwise direction as a positive direction. 2.3 degree azimuth and polarization ellipse is determined by the incident light polarizer and compensator setting. 2.4 After the incident sample reflection, azimuth and polarization ellipse of change. System by alternating polarizer and analyzer is provided Position, light incident on the sample surface is elliptically polarized reflected light to linearly polarized light, the detector is adjusted to extinction. 2.5 insulator film thickness and refractive index by hand or by means of a graphic method Accompanying software calculated. 2.6 Non-insulating film having a certain thickness, refractive index and extinction coefficient, only when the reflected light measured meets the measuring signal When the requirements of the instrument before measurement.

3 disturbances

If there is contamination on the external surface of the sample 3.1, erroneous measurement results will be given. 3.2 in the spot diameter and comparable scope, if the substrate is uneven, the insulator film thickness is uneven, uneven distribution of the refractive index, can be Accuracy can not achieve complete extinction, the measurement results will be reduced. 3.3 If the insulator film is part of the test wavelength of light absorbed or scattered, it may not be the only solution. 3.4 If a graphic method in the calculation, when the angle of phase change (Δ, phase changes ejΔ) between 140 ° ~ 180 ° or amplitude change Angle [Ψ, amplitude changes tanΨ] is between 11.6 ° ~ 14 °, the measurement accuracy will be reduced.

4 measuring instruments

4.1 Source. multicolor lamp with a collimator or a monochromator, or a laser, monochrome collimated light beam to generate a designated test wavelength. 4.2 polarizer. a birefringent crystal, is used to produce unpolarized source of monochromatic light is converted to linearly polarized light. The crystals need to be rotated, and security Mounted on the positioning accuracy of ± 0.1 ° reach the round dial. 4.3 analyzer. a birefringent crystal, and from a similar partial structure and installed in a similar manner. 4.4 compensation. birefringent plate, a transmittance (Tc) and the phase delay (Delta] c) are known, for linearly polarized light into elliptically polarized light, mounted Positioning accuracy of ± reach the circular dial of 0.1 °. ......

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