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SJ 2376-1983 English PDF

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SJ 2376-1983: Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD647
Status: Obsolete
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
SJ 2376-1983199 Add to Cart 2 days Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD647 Obsolete

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Basic data

Standard ID: SJ 2376-1983 (SJ2376-1983)
Description (Translated English): Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD647
Sector / Industry: Electronics Industry Standard
Classification of Chinese Standard: L42
Word Count Estimation: 3,398
Date of Issue: 8/19/1983
Date of Implementation: 3/1/1984
Regulation (derived from): Industry-Science (2010) No. 77
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