SJ 2376-1983 English PDFUS$199.00 ยท In stock
Delivery: <= 2 days. True-PDF full-copy in English will be manually translated and delivered via email. SJ 2376-1983: Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD647 Status: Obsolete
Basic dataStandard ID: SJ 2376-1983 (SJ2376-1983)Description (Translated English): Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD647 Sector / Industry: Electronics Industry Standard Classification of Chinese Standard: L42 Word Count Estimation: 3,398 Date of Issue: 8/19/1983 Date of Implementation: 3/1/1984 Regulation (derived from): Industry-Science (2010) No. 77 |