JJF 1895-2021 English PDF

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JJF 1895-2021: Calibration Specification for Semiconductor Devices DC and Low Frequency Parameters Test Equipment
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
JJF 1895-2021	789	Add to Cart	6 days	Calibration Specification for Semiconductor Devices DC and Low Frequency Parameters Test Equipment	Valid

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Basic data

Standard ID: JJF 1895-2021 (JJF1895-2021)
Description (Translated English): Calibration Specification for Semiconductor Devices DC and Low Frequency Parameters Test Equipment
Sector / Industry: Metrology & Measurement Industry Standard
Classification of Chinese Standard: A55
Word Count Estimation: 34,370
Issuing agency(ies): State Administration for Market Regulation

JJF 1895-2021: Calibration Specification for Semiconductor Devices DC and Low Frequency Parameters Test Equipment

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Calibration Specification for Semiconductor Devices DC and Low Frequency Parameters Test Equipments National Metrology Technical Specifications of the People's Republic of China Semiconductor device DC and low frequency parameters Test equipment calibration specification Released on 2021-02-23 2021-08-23 implementation Issued by the State Administration for Market Regulation Semiconductor device DC and low frequency parameters Test equipment calibration specification TestEquipments Replace JJG725-1991 Focal point. National Radio Metrology Technical Committee Main drafting unit. China Electronics Standardization Institute Participating in the drafting unit. China Institute of Metrology Beijing Ketong Electronic Relay Factory Co., Ltd. The 13th Research Institute of China Electronics Technology Group Corporation Beijing Lixin Test Technology Co., Ltd. This specification entrusts the National Radio Measurement Technical Committee to be responsible for the interpretation The main drafters of this specification. Liu Chong (China Electronics Standardization Institute) Li Jie (China Electronics Standardization Institute) Shan Zhang (China Electronics Standardization Institute) Participating drafters. Gao Ying (China Institute of Metrology) Li Qi (Beijing Ketong Electronic Relay Factory Co., Ltd.) Qiao Yu'e (The 13th Research Institute of China Electronics Technology Group Corporation) Li Lijun (Beijing Lixin Test Technology Co., Ltd.)

table of Contents

Introduction (Ⅱ) 1 Scope (1) 2 Overview (1) 3 Measurement characteristics (1) 3.1 DC resistance(1) 3.2 Voltage output(1) 3.3 Voltage indication (1) 3.4 Current output (1) 3.5 Current indication (1) 3.6 Low frequency signal source (1) 3.7 Low frequency h parameter(1) 4 Calibration conditions (2) 4.1 Environmental conditions (2) 4.2 Equipment for calibration (2) 5 Calibration items and calibration methods (3) 5.1 Calibration items (3) 5.2 Appearance and working normality inspection (3) 5.3 DC resistance(3) 5.4 Voltage output (4) 5.5 Voltage indication (6) 5.6 Current output (7) 5.7 Current indication (9) 5.8 Low frequency signal source(10) 5.9 Low frequency h parameter(11) 6 Calibration result expression (12) 7 Re-calibration interval (12) Appendix A Original Record Format (13) Appendix B. Internal page format of calibration certificate (18) Appendix C Calibration Uncertainty Evaluation Examples of Major Items (23) Appendix D. Examples of structure diagrams, panels and test fixture terminals of the calibrated equipment (29)

Introduction

This specification is based on JJF 1071-2010 "Rules for the Compilation of National Metrology and Calibration Specifications" and JJF 1059.1-2012 "Evaluation and Expression of Measurement Uncertainty" was compiled. This specification is revised on the basis of JJG725-1991 "Transistor DC and Low Frequency Parameter Tester". versus Compared with JJG725-1991, in addition to editorial changes, the main technical changes are as follows. ---Revised calibration items such as current output and current indication; ---Added examples of uncertainty evaluation of calibration results for main items (see Appendix C). The release status of previous versions of this specification. ---JJG725-1991. Semiconductor device DC and low frequency parameters Test equipment calibration specification

1 Scope

This specification applies to the calibration of semiconductor device DC and low-frequency parameter test equipment.

2 overview

The semiconductor device DC and low-frequency parameter test equipment (hereinafter referred to as the calibrated equipment) consists of a bias voltage source and a bias voltage source. It consists of current source, voltage measurement unit, current measurement unit, low-frequency signal source, etc., which are mainly used for direct current of various semiconductor devices. Flow parameter, low frequency parameter test.

3 Metrological characteristics

3.1 DC resistance Range. 0.005Ω~20GΩ, maximum allowable error. ± (0.1%~1%). 3.2 Voltage output a) DC voltage. ± (0.01V~10kV), maximum allowable error. ± (0.1%~3%); b) AC voltage. ± (0.1V~5000V), maximum allowable error. ± (1%~5%), frequency. 50Hz. 3.3 Voltage indication a) DC voltage. ± (0.01V~10kV), maximum allowable error. ± (0.1%~3%); b) AC voltage. ± (0.1V~5000V), maximum allowable error. ± (1%~5%), frequency. 50Hz. 3.4 Current output a) DC current. ± (1nA~10A), maximum allowable error. ± (0.1%~1%); b) Pulse current. ± (1A~1200A), maximum allowable error. ± (0.5%~3%), single pulse, Pulse width. 250μs~10ms. 3.5 Current indication a) DC current. ± (1nA~10A), maximum allowable error. ± (0.1%~1%); b) Pulse current. ± (1A~1200A), maximum allowable error. ± (0.5%~3%), single pulse, Pulse width. 250μs~10ms. 3.6 Low frequency signal source a) Signal source output amplitude. 0.5V~1V, maximum allowable error. ± (1%~3%); b) Frequency. 1kHz, maximum allowable error. ±1%. 3.7 Low frequency h parameter a) hie, hib. 10Ω~10kΩ, maximum allowable error. ±5%; b)hoe, hob. 0.1μS~200μS, maximum allowable error. ±5%; ......

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