GB/T 6616-2023 English PDF

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GB/T 6616-2023: Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films - Noncontact eddy-current gauge
Status: Valid

GB/T 6616: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 6616-2023	269	Add to Cart	3 days	Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films - Noncontact eddy-current gauge	Valid
GB/T 6616-2009	319	Add to Cart	3 days	Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge	Obsolete
GB/T 6616-1995	279	Add to Cart	3 days	Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage	Obsolete
GB 6616-1986	199	Add to Cart	2 days	Standard method for measuring resistivity of silicon slices by noncontacting technique	Obsolete

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Basic data

Standard ID: GB/T 6616-2023 (GB/T6616-2023)
Description (Translated English): Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films - Noncontact eddy-current gauge
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040
Word Count Estimation: 14,114
Date of Issue: 2023-08-06
Date of Implementation: 2024-03-01
Older Standard (superseded by this standard): GB/T 6616-2009
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 6616-2023: Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films - Noncontact eddy-current gauge

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 77.040 CCSH21 National Standards of People's Republic of China Replace GB/T 6616-2009 Semiconductor wafer resistivity and semiconductor film thin layer Testing of resistance by non-contact eddy current method Published on 2023-08-06 2024-03-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document replaces GB/T 6616-2009 "Non-contact eddy current method for testing resistivity of semiconductor silicon wafers and sheet resistance of silicon films". Compared with GB/T 6616-2009, in addition to structural adjustments and editorial changes, the main technical changes are as follows. a) Changed the scope (see Chapter 1, Chapter 1 of the.2009 edition); b) Interference factors have been changed (see Chapter 5, Chapter 5 of the.2009 edition); c) The test conditions have been changed (see Chapter 6, 6.1 of the.2009 edition); d) Changed the requirements for standard films and reference films (see 8.1, 8.2, 8.3, 4.2 of the.2009 edition); e) Added sample requirements (see 8.4, 8.5, 8.6); f) The test procedures have been changed (see Chapter 9, Chapter 6 of the.2009 edition); g) Changed the precision (see Chapter 10, Chapter 7 of the.2009 edition); h) Increased temperature coefficient of resistivity of silicon single crystal (see Appendix A). Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is sponsored by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2). This document was drafted by. China Electronics Technology Group Corporation No. 46 Research Institute, Nonferrous Metals Technology and Economic Research Institute Co., Ltd. Company, Zhejiang Jinruihong Technology Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Guangdong Tianyu Semiconductor Co., Ltd., Beijing Tongmei Crystal Technology Co., Ltd., Shandong Youyan Semiconductor Materials Co., Ltd., Tianjin Zhonghuan Leading Materials Technology Co., Ltd., Beijing Tian Keheda Semiconductor Co., Ltd., China Jinghua (Tianjin) Semiconductor Materials Co., Ltd., Zhejiang Xusheng Electronics Co., Ltd., Zhejiang Zhongjing Technology Co., Ltd., Kunshan Haifeiman Technology Group Co., Ltd. The main drafters of this document. He Xuankun, Liu Lina, Li Suqing, Zhang Ying, Ma Chunxi, Zhang Haiying, Pan Jinping, Ding Xiongjie, Ren Diansheng, Wang Yuanli, Zhu Xiaotong, Zhang Xueyuan, She Zongjing, Qi Fei, Xu Rong, Li Mingda, Zhan Yufeng, Huang Xiaoxiao, Bian Fang. This document was first published in.1995, revised for the first time in.2009, and this is the second revision. Semiconductor wafer resistivity and semiconductor film thin layer Testing of resistance by non-contact eddy current method

1 Scope

This document describes the non-contact eddy current method for testing the resistivity of semiconductor wafers and the sheet resistance of semiconductor films. This document is suitable for testing silicon, conductive gallium arsenide, and conductive gallium arsenide with a diameter or side length of not less than 25.0mm and a thickness of 0.1mm~1.0mm. The resistivity of the electric silicon carbide single crystal wafer, and the resistance of the thin film layer prepared on the substrate with a resistance not less than 1000 times the thin film resistance. one The testing range of wafer resistivity is 0.001Ω·cm~200Ω·cm, and the testing range of film sheet resistance is 2.0×103Ω/□~ 3.0×103Ω/□. This method can also be extended to other semiconductor materials, but it is not suitable for determining the radial resistivity change of the wafer.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 14264 Semiconductor material terminology GB/T 25915.1-2021 Clean rooms and related controlled environments Part 1.Classification of air cleanliness levels according to particle concentration

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

4 Principles

Insert the chip flat into the fixed gap between a pair of coaxial eddy current probes (eddy current sensors), and the two eddy current probes connected to the oscillation circuit The alternating magnetic field between the probes induces eddy currents on the chip, and the change in the excitation current is a function of the conductance of the chip. Excitation current by test The change in the conductivity of the wafer can be measured. The sheet resistance (Rs) of the wafer is calculated according to formula (1). Rs=ρt= G = δt (1) In the formula. Rs---Sheet resistance of the chip, unit is ohms per square (Ω/□); ρ ---Resistivity of the wafer, unit is ohm centimeter (Ω·cm); t ---Thickness at the center of the wafer (when measuring the film, the thickness is 0.0508cm as the effective thickness), in centimeters (cm); G ---Thin layer conductance of the wafer, the unit is Siemens (S); δ ---The conductivity of the wafer, the unit is Siemens per centimeter (S/cm).

5 Interference factors

5.1 The surface of the wafer is contaminated or damaged, which will introduce errors in the test results. ......

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