GB/T 44515-2024 English PDFUS$354.00 · In stock
Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 44515-2024: Micro-electromechanical system(MEMS) technology - Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film Status: Valid
Basic dataStandard ID: GB/T 44515-2024 (GB/T44515-2024)Description (Translated English): Micro-electromechanical system(MEMS) technology - Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: L59 Classification of International Standard: 31.080.99 Word Count Estimation: 18,169 Date of Issue: 2024-09-29 Date of Implementation: 2025-01-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 44515-2024: Micro-electromechanical system(MEMS) technology - Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. National Standard of the People's Republic of China ICS 31.080.99CCS L 59 Micro-Electro-Mechanical Systems (MEMS) Technology MEMS piezoelectric film electromechanical conversion characteristics measurement method Micro⁃electromechanical system (MEMS) technology-Measurement methods of electro⁃mechanical conversion characteristics of MEMS piezoelectric thin film (IEC 62047⁃30..2017, Semiconductor-Micro-electromechanical devices- Part 30.Measurement methods of electro⁃mechanical conversion 2024-09-29 Release 2025-01-01 Implementation State Administration for Market Regulation The National Standardization Administration issued Table of ContentsPreface Ⅲ 1 Scope...1 2 Normative references ...1 3 Terms and Definitions 1 4 MEMS piezoelectric film test bench...1 4.1 General Principles 1 4.2 Functional modules and components 3 5 Tested film...4 5.1 General Principles 4 5.2 Measurement Principle 4 5.3 Measurement process of positive transverse piezoelectric coefficient 4 5.4 Measurement process of inverse transverse piezoelectric coefficient 4 6 Test Report 5 Appendix A (Informative) Examples of MEMS Piezoelectric Film Measurement Methods 7 A.1 Overview 7 A.2 Sample preparation process...7 A.3 Measurement Process 7 A.4 Test Report 10 A.5 Neutral Surface Equation 12 References ...13ForewordThis document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting is required. This document is equivalent to IEC 62047-30.2017 "Semiconductor devices Microelectromechanical devices Part 30.MEMS piezoelectric film machine Electrical conversion characteristics measurement method. The following minimal editorial changes were made to this document. --To coordinate with the existing standards, the name of the standard will be changed to "Micro-Electro-Mechanical Systems (MEMS) Technology - MEMS Piezoelectric Thin Film Electromechanical Transducers" Characteristic Measurement Methods. --Added notes for 3.2 and 3.3. -- Figure 1 is further annotated so that the description in Table 1 corresponds to Figure 1. The principle of the close connection is to explain the basic principle of the functional module or component of the MEMS piezoelectric film transverse piezoelectric coefficient test bench in Figure 1. This composition is shown in Figure 1” before and after it is adjusted to the position where it appears in Figure 1, i.e., at 4.1. -- Corrected "ec31,f (min)" in Chapter 6 a) 11) to "ec31,f (V in, min)" and corrected "ec31,f (max)" to "ec31,f (V in, max)". -- Corrected "ed31, f" in Chapter 6 b) 3) to "ed31, f", corrected "ec31, f (min)" to "ec31, f (V in, min)", corrected "ec31, f (max)” is “ec31,f (V in, max)”. --Corrected "ec31,f(0)" in Chapter 6 b)4) to "ec31,f (V in,0)". -- Corrected A.3.2."ec31,f (V in,0) and ec31,f (V in, max) can be determined as 10.0 N/Vm and 15.0 N/Vm respectively" to “|ec31,f (V in,0) | and |ec31,f (V in, max) | can be determined to be 10.6 N/Vm and 15.0 N/Vm, respectively”. --Corrected the calculated result of positive transverse piezoelectric coefficient "ed31,f" in Table A.3 to a negative value. -- Corrected "ec31,f (min)" in item 11 of Table A.6 to "ec31,f (V in, min)" and corrected "ec31,f (max)" to "ec31,f (V in, max)". Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document is proposed and coordinated by the National Micro-Electromechanical Technology Standardization Technical Committee (SAC/TC 336). This document was drafted by. Beijing Automation Control Equipment Research Institute, Anhui Aofei Acoustic Technology Co., Ltd., Xinlian Integrated Circuit Manufacturing Co., Ltd. Co., Ltd., China Machinery Productivity Promotion Center Co., Ltd., Suzhou University, Wuxi China Resources Shanghua Technology Co., Ltd., Taiyuan Aviation Instrument Co., Ltd. Ltd., China Aerospace Science and Industry Aerospace Technology Research Institute, Shandong Zhongkang Guochuang Advanced Printing and Dyeing Technology Research Institute Co., Ltd., Shenzhen Meisixian Duan Electronics Co., Ltd., Beijing Telemetry Technology Research Institute, Xi'an Jiaotong University, Beijing Chenjing Electronics Co., Ltd., Shanghai Xinwei Technology Research and Development Center Xin Co., Ltd., Tianjin Xinzhi Perception Technology Co., Ltd., Shanghai Xinwu Technology Co., Ltd., Tianjin University, Peking University, Hebei Chuguang Automobile Components Co., Ltd., Gongda Electroacoustic Co., Ltd., Henan Xinrui Electronic Technology Co., Ltd., Guangdong Runyu Sensor Co., Ltd., Huajing Sensing Technology (Wuxi) Co., Ltd. The main drafters of this document are. Wang Yongsheng, Zhang Hongyu, An Zhiwu, Li Genzi, Zhang Jinghua, Sun Lining, Su Yi, Zhang Xinwei, Li Latu, Liu Huicong, Xing Wenzhong, Xu Kun, Mao Zhiping, Lu Wenyi, Shan Weizhong, Xu Keyu, Wang Zhiguang, Tang Yi, Yao Yanqing, Lou Liang, Zheng Dongchen, Chen Demin, Yao Peng, Hu Xiaodong, Lu Yipeng, Yuan Changzuo, Zhong Shengli, Hou Jie, Chen Fucao, Li Shucheng, Wang Zhihong. Micro-Electro-Mechanical Systems (MEMS) Technology MEMS piezoelectric film electromechanical conversion characteristics measurement method1 ScopeThis document describes methods for measuring the electromechanical transduction characteristics of piezoelectric films used in devices such as piezoelectric microsensors and microactuators. This document applies to piezoelectric films prepared by MEMS technology.2 Normative referencesThis document has no normative references.3 Terms and definitionsThe following terms and definitions apply to this document. 3.1 Unimorph beam A beam consisting of a layer of piezoelectric film on a substrate. 3.2 Direct transverse piezoelectric coefficient The charge or voltage generated by strain or stress is used to calculate the transverse piezoelectric coefficient of the piezoelectric film. Note. When used for piezoelectric films, it is generally expressed as the positive equivalent transverse piezoelectric coefficient. 3.3 Converse transverse piezoelectric coefficient The strain or stress caused by the electric field or voltage is used to calculate the transverse piezoelectric coefficient of the piezoelectric film. Note. When used for piezoelectric films, it is generally expressed as the inverse equivalent transverse piezoelectric coefficient.4 MEMS piezoelectric film test bench4.1 General The following transverse piezoelectric properties measurement method is applicable to single piezoelectric layer beams. Functions of MEMS piezoelectric film transverse piezoelectric coefficient test bench The basic structure of the module or component is shown in Figure 1.The symbols and names of the test bench are shown in Table 1. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 44515-2024_English be delivered?Answer: Upon your order, we will start to translate GB/T 44515-2024_English as soon as possible, and keep you informed of the progress. The lead time is typically 2 ~ 4 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 44515-2024_English with my colleagues?Answer: Yes. 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