GB/T 40291-2021 English PDFUS$494.00 · In stock
Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 40291-2021: Nuclear instrumentation - High-purity germanium crystals for radiation detectors - Measurement methods of basic characteristics Status: Valid
Basic dataStandard ID: GB/T 40291-2021 (GB/T40291-2021)Description (Translated English): Nuclear instrumentation - High-purity germanium crystals for radiation detectors - Measurement methods of basic characteristics Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: F88 Word Count Estimation: 26,247 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 40291-2021: Nuclear instrumentation - High-purity germanium crystals for radiation detectors - Measurement methods of basic characteristics---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Nuclear instrumentation-High-purity germanium crystals for radiation detectors-Measurement methods of basic characteristics ICS 27.120 CCSF88 National Standards of People's Republic of China High-purity germanium crystal for nuclear instrument and radiation detector Measurement methods of basic characteristics (IEC 61435.2013, IDT) Released on 2021-05-21 2021-12-01 implementation State Administration of Market Supervision and Administration Issued by the National Standardization Management Committee Table of contentsForeword Ⅲ Introduction Ⅳ 1 Scope 1 2 Normative references 1 3 Terms, definitions and symbols 1 3.1 Terms and definitions 1 3.2 Symbols, abbreviations, quantities and units 2 3.3 Quantity and unit 4 4 Net electroactive impurities (NA-ND) measurement 4 4.1 Sample preparation of Van der Pauw method 4 4.2 Measuring the Net Concentration of Electroactive Impurities (NA-ND) 6 5 Determination of impurity center concentration by deep-level transient spectroscopy technique 11 5.1 Overview 11 5.2 Deep-level transient spectroscopy equipment 11 5.3 Sample selection and preparation for deep-level transient spectrum 11 5.4 Method for measuring impurity center concentration 12 5.5 P-type high purity germanium majority carrier deep energy level 15 5.6 Deep energy levels of majority carriers in n-type high purity germanium 16 5.7 Report 16 6 Crystallographic properties 16 6.1 Overview 16 6.2 Crystal orientation 17 6.3 Sample preparation 17 6.4 Report 18 Appendix A (informative) Hall factor of p-type and n-type high purity germanium 19 Appendix B (Normative) Correspondence RAB,CD RBC,DA F RAB ,CD RBC, DA value 20 Reference 21ForewordThis document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. The translation method used in this document is equivalent to IEC 61435.2013 "Basic characteristics of high-purity germanium crystals for nuclear instrumentation radiation detectors" Methods of Measuring Sexuality. This document has made the following editorial changes. ---Correct the incorrect content in the "Commonly Used Symbol Definition Comparison Table" in the original text of the international standard, including. the definitions of the symbols "f" and "F" are mutually exclusive Change, the symbol "K" is changed to "k", the symbol "P" is changed to "ρ", the symbol "T" [time, unit is second (s)] is changed to "t", the symbol is deleted "()" and its definition, the average value is represented by the upper horizontal line (example τr2). This document was proposed and managed by the National Standardization Technical Committee for Nuclear Instruments (SAC/TC30). Drafting organizations of this document. Nuclear Industry Aerial Survey and Remote Sensing Center, Shenzhen Institute of Metrology and Quality Inspection. The main drafters of this document. Zhang Jiyun, Du Xiaoli, Tang Xiaochuan, Li Mingzhao, Guan Shaobin, Zhou Zongjie, Zhang Changxing, Liang Yongshun, Liu Jinyao, Liu Shanshan.IntroductionThe detector manufacturer needs the specific parameters of the crystal to evaluate the characteristics of the coaxial detector. Since the physical characteristics are changed, only pass The manufacturer's measurement results cannot deduce a complete detector performance index. This document defines the basic parameters used to determine crystals (such as electrical activity) The method of measuring the net concentration of sexual impurities, the concentration of deep-level impurity centers and the crystallographic characteristics of crystals. When high purity germanium (HPGe) detectors are used to detect ionizing radiation, the size and purity of the germanium crystals need to be determined. Due to the high resistance of the material (When the temperature is 77K, the resistivity is about 10kΩ·cm), and the degree of impurity compensation causes special problems in the production of germanium crystals. And how to reasonably describe the distribution of large-volume crystal impurities in a single device, etc., the existing standards do not cover. One of the most important characteristics of high purity germanium is the net electroactive impurity concentration (NA-ND), which determines the depletion voltage when the detector is working. The van der Pauw method indicating n-type or p-type is usually used to determine (NA-ND), and the transfer measurement is carried out on the sheet samples immersed in liquid nitrogen. Pick When using this technique, (NA-ND) can be calculated by resistivity or Hall coefficient. Through a series of measurements on the sample to get the resistivity or Hall coefficient. High-purity germanium crystal for nuclear instrument and radiation detector Measurement methods of basic characteristics1 ScopeThis document describes the terminology and test methods for measuring the basic characteristics of high-purity germanium crystals. Including the net concentration of electroactive impurities (NA-ND), Deep-level impurity center concentration and crystallographic characteristics. This document applies to high-purity germanium crystals for γ-ray and X-ray radiation detectors. The net concentration of the electroactive impurity center of this germanium single crystal Less than 1011cm-3, usually on the order of 1010cm-3. The test methods listed in this document are not legal, but they are widely used in the industry and provide a The verified information satisfies the manufacturer's needs. In GB/T 7167-2008 and GB/T 11685-2003, a complete test method for assembled germanium detectors is given.2 Normative referencesThe contents of the following documents constitute the indispensable clauses of this document through normative references in the text. Among them, dated quotations Only the version corresponding to that date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to This document. GB/T 2900.66-2004 Electrotechnical terminology for semiconductor devices and integrated circuits (IEC 60050-521.2002, IDT) GB/T 2900.97-2016 Electrotechnical terminology nuclear instrument. physical phenomena, basic concepts, instruments, systems, equipment and detectors (IEC 60050-395.2014, IDT)1) 1) The original international standards IEC 60050-393.2003 and IEC 60050-394.2007 have been replaced by IEC 60050-395.2014. 3 Terms, definitions and symbols 3.1 Terms and definitions The following terms and definitions apply to this document. 3.1.1 Semiconductor The total conductivity caused by the two carriers is usually a material between the conductor and the insulator. The carrier concentration in this material varies with the external Ministry conditions change and change. Note. The term semiconductor generally applies to materials whose carriers are electrons or holes. [Source. GB/T 2900.66-2004,521-02-01] 3.1.2 High-purity semiconductor detector Semiconductor detectors using high-purity (such as high resistivity) semiconductor materials. [Source. GB/T 2900.97-2016,395-03-48] 3.1.3 Hall effect The electric field intensity generated in conductors and semiconductors that is proportional to the vector product of current density and magnetic induction. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 40291-2021_English be delivered?Answer: Upon your order, we will start to translate GB/T 40291-2021_English as soon as possible, and keep you informed of the progress. The lead time is typically 3 ~ 5 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 40291-2021_English with my colleagues?Answer: Yes. 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