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Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 36613-2018: Probe test method for light emitting diode chips Status: Valid
Basic dataStandard ID: GB/T 36613-2018 (GB/T36613-2018)Description (Translated English): Probe test method for light emitting diode chips Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: L45 Classification of International Standard: 31.260 Word Count Estimation: 10,110 Date of Issue: 2018-09-17 Date of Implementation: 2019-01-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 36613-2018: Probe test method for light emitting diode chips---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.Probe test method for light emitting diode chips ICS 31.260 L45 National Standards of People's Republic of China LED chip spot measurement method Published on.2018-09-17 2019-01-01 implementation State market supervision and administration China National Standardization Administration issued ContentForeword I Introduction II 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 chip test conditions and steps 2 5 electrical parameters point test 5 6 Optical parameter point measurement 5 7 Electrostatic discharge sensitivity point test 6ForewordThis standard was drafted in accordance with the rules given in GB/T 1.1-2009. Please note that some of the contents of this document may involve patents. The issuing organization of this document is not responsible for identifying these patents. This standard is under the jurisdiction of the Ministry of Industry and Information Technology (Electronics) of the People's Republic of China. This standard was drafted. Sanan Optoelectronics Co., Ltd., Xiamen Sanan Optoelectronics Technology Co., Ltd., China Electronic Technology Standardization Research Research Institute, Guangzhou Saixi Standard Testing Institute Co., Ltd. The main drafters of this standard. Cai Weizhi, Liang Fen, Liu Xiujuan, Li Guohuang, Lu Yan, Jin Wei, Shao Xiaojuan, Zhou Gang, Shi Junpeng.IntroductionThe semiconductor light-emitting diode chip is the core component of the light-emitting diode device, and its performance directly affects the light-emitting diode device. Applications in semiconductor lighting products. How to accurately test the photoelectric performance of a semiconductor light-emitting diode chip, and become a chip manufacturing and use An important part. The standard was developed to ensure reliable and stable chip quality while scaled up. LED chip spot measurement method1 ScopeThis standard specifies the light-emitting diode chip (hereinafter referred to as "chip") optical parameters, direct current parameters and electrostatic discharge sensitivity point measurement Conditions and point test methods. This standard is applicable to the detection method of the visible light emitting diode package chip and thin film chip for mass production. Ultraviolet light, infrared light The photodiode chip and the spot measurement of the epitaxial wafer can also be referred to. This standard does not apply to the thermal parameters and AC characteristics of LED chips.2 Normative referencesThe following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. SJ/T 11394-2009 Semiconductor Light Emitting Diode Test Method SJ/T 11395-2009 Semiconductor lighting terminology SJ/T 11399-2009 Semiconductor light-emitting diode chip test method3 Terms and definitionsThe following terms and definitions defined by SJ/T 11395-2009 apply to this document. 3.1 Spot test probetest A method for automatically detecting the photoelectric performance and parameters of a chip. Note. Using an automatic program-controlled test instrument in the form of probe contact, the chip is arranged according to a certain rule for transient test, and can be shaped according to the position of each chip. Into the parameter distribution map. 3.2 Parameter map mapping After the chip is tested, a color map indicating the photoelectric parameter test value by color is formed according to the position of the chip. 3.3 Transient test transienttest The millisecond-level pulse is used to drive the lighting chip. During the test time, the process control test instrument automatically reads a plurality of photoelectric parameter values. 3.4 Receiver photoreceiver An instrument used to collect the luminous intensity or radiant power of a chip under test. 3.5 Slide chuck chuck The chassis used to carry the chip in the spot test and provide electrical contact with the back electrode of the chip. 3.6 Ink needle inkpin A device for applying ink to a chip that does not meet the parameter requirements. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 36613-2018_English be delivered?Answer: Upon your order, we will start to translate GB/T 36613-2018_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 36613-2018_English with my colleagues?Answer: Yes. 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