GB/T 28275-2012 English PDF

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GB/T 28275-2012: Silicon-based MEMS fabrication technology -- Specification for KOH etch process
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 28275-2012	259	Add to Cart	3 days	Silicon-based MEMS fabrication technology -- Specification for KOH etch process	Valid

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Basic data

Standard ID: GB/T 28275-2012 (GB/T28275-2012)
Description (Translated English): Silicon-based MEMS fabrication technology -- Specification for KOH etch process
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L55
Classification of International Standard: 31.200
Word Count Estimation: 11,146
Quoted Standard: GB/T 26111-2010; GB/T 1031-2009; GB 50073-2001
Regulation (derived from): National Standards Bulletin No. 9 of 2012
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the use of potassium hydroxide etch process for MEMS device fabrication process requirements to be followed. This standard applies to nitrogen hydroxide etching process and management.

GB/T 28275-2012: Silicon-based MEMS fabrication technology -- Specification for KOH etch process

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS31.200 L55 National Standards of People's Republic of China Silicon MEMS Manufacturing Technology KOH etching process specification Issued on. 2012-05-11 2012-12-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard rule according to GB/T 1.1-2009 given draft. This standard by the National MEMS Technology Standardization Technical Committee (SAC/TC336) and focal points. This standard was drafted. Shanghai Institute of Microsystem and Information Technology, Chongqing University, Southeast University, China Electronic Science and Technology collection Mission Institute of the forty-ninth, the machine Productivity Promotion Center. The main drafters of this standard. Xia Weifeng, Xiong Bin, Feng, Ge Xiao Hong, Zhou recurrence, Yuling, He Xuefeng, Tian Lei, Liu Wei. Silicon MEMS Manufacturing Technology KOH etching process specification

1 Scope

This standard specifies the use of potassium hydroxide etch process performed MEMS device fabrication process requirements to be followed. This standard applies to KOH etching process and management.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated edition applies to this article Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 26111-2010 micro-electromechanical systems (MEMS) technology terms GB/T 1031-2009 Geometrical product specifications (GPS) Surface texture Profile method of surface roughness parameters and their values GB 50073-2001 clean plant design specifications

3 Terms and Definitions

GB/T 26111-2010 defined and the following terms and definitions apply to this document. 3.1 Cleanliness cleanliness Number of Units volume of air in a particle size to distinguish cleanliness. 3.2 Cleanroom cleanroom Airborne particle concentration controlled room. Its construction and use should be induced to reduce indoor, generation and retention of particles. Other indoor Relevant parameters such as temperature, humidity, pressure, etc. as required for control. 3.3 Wet etching wetetching Utilization of material to be engraved can produce a chemical reaction solution or a thin film device structure etching technology. Note. during wet etching, etching of part of the mask will not need to expose the rest, and then the material is immersed in the reaction solution can be divided to each. Isotropic etching and anisotropic etching. [GB/T 26111-2010, the definition 3.5.17] 3.4 Etchant escharotic Corrosive effect of chemical substances. 3.5 Etchant etchant The solution containing etchant. ......

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