GB/T 249-2017 English PDF

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GB/T 249-2017: The rule of type designation for discrete semiconductor devices
Status: Valid

GB/T 249: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 249-2017	109	Add to Cart	3 days	The rule of type designation for discrete semiconductor devices	Valid
GB/T 249-1989	199	Add to Cart	2 days	The rule of type designation for discrete semiconductor devices	Obsolete

Similar standards

SJ/T 11281   SJ/T 11141   GB/T 18910.2   GB/T 4937.35   GB/T 4937.34   GBZ/T 249   

Basic data

Standard ID: GB/T 249-2017 (GB/T249-2017)
Description (Translated English): The rule of type designation for discrete semiconductor devices
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L40
Classification of International Standard: 31.080.01
Word Count Estimation: 5,546
Date of Issue: 2017-05-12
Date of Implementation: 2017-12-01
Older Standard (superseded by this standard): GB/T 249-1989
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the composition of the semiconductor discrete device model naming principle, the components of the symbol and its significance. This standard applies to a variety of semiconductor discrete devices.

GB/T 249-2017: The rule of type designation for discrete semiconductor devices

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
The rule of type designation for discrete semiconductor devices ICS 31.080.01 L40 National Standards of People's Republic of China Replacing GB/T 249-1989 Semiconductors Discrete Device Model Naming Method 2017-05-12 released 2017-12-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of the People 's Republic of China China National Standardization Management Committee released

Foreword

This standard is drafted in accordance with the rules given in GB/T 1.1-2009. This standard instead of GB/T 249-1989 "semiconductor discrete device model naming method", compared with GB/T 249-1989 main technical The changes are as follows. --- Mixing tube and detector tube are named (see 3.1, 1989 version 3.1); The second part of the diode adds the symbol E, representing the compound or alloy material (see 3.1); - increased naming of noise and limiting tubes (see 3.1); --- Added the name of the transistor array (see 3.2); --- "ZL" is replaced by a representative rectifier array representing a diode array (see 3.2, 1989, 3.2); --- Added the name of the Schottky diode (see 3.2); --- Added the name of the trigger diode (see 3.2). This standard is proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This standard is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). The drafting unit of this standard. China Electronics Technology Group Corporation thirteenth research institute. The main drafters of this standard. Chen Hairong, Cui Bo, Li Lixia. This standard replaced the previous version of the standard release. GB/T 249-1964, GB/T 249-1974, GB/T 249-1989. Semiconductors Discrete Device Model Naming Method

1 Scope

This standard specifies the composition of the semiconductor discrete device model naming principles, components of the symbol and its significance. This standard applies to a variety of semiconductor discrete devices.

2 model composition principle

2.1 The basic meaning of the five components of the semiconductor discrete device is as follows. first part The number of electrodes of the device is represented by an Arabic numeral the second part Use Pinyin letters to represent the material and polarity of the device the third part Use the Chinese phonetic alphabet to indicate the type of device fourth part Use the Arabic numerals to indicate the registration sequence number the fifth part Use the Chinese phonetic alphabet to indicate the specification number 2.2 Semiconductor discrete device models generally from the first part to the fifth part of the composition, but also from the third part to the fifth part.

3 symbol of the model and its meaning

3.1 The symbol of the device model consisting of the first part to the fifth part and its meaning are shown in Table 1. Table 1 Symbol of the device model consisting of the first part to the fifth part and its significance The first part The second part The third part The fourth part The fifth part With Arabic numerals The number of electrodes of the device With Chinese phonetic alphabet Device material and polarity Use the Chinese phonetic alphabet to indicate the type of device With the Arabian Digital representation Registration sequence number Pinyin in Chinese Letters Specification number Symbolic meaning symbolic meaning symbolic meaning Diode N-type, germanium material P-type, germanium material N type, silicon material P-type, silicon material Compound or alloy material

3 Transistor A

PNP type, germanium material NPN type, germanium material PNP type, silicon material Small signal tube Mixing tube Detector tube Voltage regulator tube and voltage reference tube Variable capacity tube Rectifier Rectifier reactor Tunnel tube ......

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