GB/T 24578-2024 English PDFUS$399.00 ยท In stock
Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 24578-2024: Test method for measuring surface metal contamination on semiconductor wafers - Total reflection X-Ray fluorescence spectroscopy Status: Valid GB/T 24578: Historical versions
Basic dataStandard ID: GB/T 24578-2024 (GB/T24578-2024)Description (Translated English): Test method for measuring surface metal contamination on semiconductor wafers - Total reflection X-Ray fluorescence spectroscopy Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H21 Classification of International Standard: 77.040 Word Count Estimation: 20,253 Date of Issue: 2024-07-24 Date of Implementation: 2025-02-01 Older Standard (superseded by this standard): GB/T 24578-2015, GB/T 34504-2017 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 24578-2024: Test method for measuring surface metal contamination on semiconductor wafers - Total reflection X-Ray fluorescence spectroscopy---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. ICS 77.040 CCSH21 National Standard of the People's Republic of China Replaces GB/T 24578-2015, GB/T 34504-2017 Determination of Metal Contamination on Semiconductor Wafer Surface Total reflection X-ray fluorescence spectrometry Released on 2024-07-24 2025-02-01 Implementation State Administration for Market Regulation The National Standardization Administration issued ForewordThis document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting. This document replaces GB/T 24578-2015 "Test Method for Total Reflection X-ray Fluorescence Spectroscopy of Metal Contamination on Silicon Wafer Surface" and GB/T 34504-2017 "Measurement method for residual metal elements on the surface of polished sapphire substrates". Compared with GB/T 34504-2017, in addition to structural adjustments and editorial changes, the main technical changes are as follows. a) The scope has been changed (see Chapter 1, Chapter 1 of GB/T 24578-2015 and GB/T 34504-2017); b) Added the definition of "total reflection" (see 3.1); c) The abbreviations have been deleted (see Chapter 4 of GB/T 24578-2015 and 3.2 of GB/T 34504-2017); d) The principle of the method has been changed (see Chapter 4, Chapter 5 of GB/T 24578-2015 and Chapter 4 of GB/T 34504-2017); e) The influence of grazing angle calibration, the influence of sample surface roughness and ripples in the interference factors have been changed [see 5.2.3, 5.3.2, 6.2.1, 6.3.2 of GB/T 24578-2015 and 6.2b), 6.2g) of GB/T 34504-2017]; added the grazing angle option selection, detection limit when testing sodium, magnesium and aluminum elements, the influence of target working mode, the influence of target chamber vacuum, nitrogen in the main chamber The influence of purity and the influence of different angular scanning of calibration samples and test samples (see 5.1.1, 5.1.6, 5.2.6, 5.2.7, 5.2.8, 5.3.1); f) The influence of contamination elements and the influence of uneven contamination in the interference factors have been changed [see 5.3.4, 5.3.5, GB/T 34504-2017 6.3e), 6.3f)]; g) Removed the interference factors such as the vibration of the elevated floor of the equipment host, the environment where the equipment is located, the sample carrier, and the operator's gloves The impact of poor cleanliness and other conditions [see 6.3a) and 6.3c) of GB/T 34504-2017]; h) The test conditions have been changed (see Chapter 6, Chapter 9 of GB/T 24578-2015 and Chapter 7 of GB/T 34504-2017); i) Added the approximate calculation formula for the critical angle of total reflection in calibration (see 9.2.3); j) The calibration of the equipment has been changed (see Chapter 9, Chapter 10 and Chapter 11 of GB/T 24578-2015 and Chapter 8 of GB/T 34504-2017); k) The test procedures have been changed (see Chapter 10, Chapter 12 of GB/T 24578-2015 and Chapter 9 of GB/T 34504-2017); l) The precision has been changed (see Chapter 11, Chapter 13 of GB/T 24578-2015 and Chapter 11 of GB/T 34504-2017); m) The calculation of test results has been deleted (see Chapter 10 of GB/T 34504-2017). Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document was jointly issued by the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203) and the National Technical Committee on Semiconductor Equipment and Materials Standardization (SAC/TC203). It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemical Technical Committee (SAC/TC203/SC2). This document was drafted by. YUYAN Semiconductor Silicon Materials Co., Ltd., Tiantong Yinxia New Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd. Co., Ltd., Beijing Tongmei Crystal Technology Co., Ltd., Shenzhen Makino Microelectronics Technology Co., Ltd., Zhejiang Jinruihong Technology Co., Ltd. Co., Ltd., Nonferrous Metals Technology and Economic Research Institute Co., Ltd., Guangdong Tianyu Semiconductor Co., Ltd., Jiangsu Huaxing Laser Technology Co., Ltd. Jiangsu Xinmeng Semiconductor Equipment Co., Ltd., Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co., Ltd., Shenzhen Shenhongsheng Electronics Co., Ltd., Shenzhen Jingdao Electronics Co., Ltd., and Hunan Dezhi New Materials Co., Ltd. The main drafters of this document are. Ning Yongduo, Sun Yan, He Dongjiang, Li Suqing, Zhu Xiaotong, Kang Sen, Jin Huijie, Sun Yunzhe, Pan Jinping, Ren Diansheng, Zhang Haiying, He Ling, Ding Xiongjie, Liu Wei, Shen Yanfeng, Liao Zhoufang, Zhao Lili, Zhang Xigang, Lai Huipeng, Liao Jiahao. The previous versions of this document and the documents it replaces are as follows. ---First published in.2009 as GB/T 24578-2009; --- This is the second revision, incorporating GB/T 34504-2017 "Measurement of residual metal elements on the surface of polished sapphire substrates" method". Determination of Metal Contamination on Semiconductor Wafer Surface Total reflection X-ray fluorescence spectrometry1 ScopeThis document describes the total reflection X-ray fluorescence spectroscopy (TXRF) of metallic elements within a depth of 5 nm from the surface of semiconductor mirror wafers. Test method. This document applies to single crystal polishing of silicon, silicon on insulating substrate (SOI), germanium, silicon carbide, sapphire, gallium arsenide, indium phosphide, gallium antimonide, etc. The determination of metal contamination on the surface of wafers or epitaxial wafers is particularly suitable for the determination of metal contamination on the natural oxide layer after wafer cleaning or on the oxide layer grown by chemical methods. Determination of surface density of pollutant elements, measurement range. 109atoms/cm2~1015atoms/cm2. The method specified in this document can detect elements with atomic numbers 16 (S) to 92 (U) in the periodic table, and is particularly suitable for potassium, calcium, titanium, vanadium, Metal elements such as chromium, manganese, iron, cobalt, nickel, copper, zinc, arsenic, molybdenum, palladium, silver, tin, tantalum, tungsten, platinum, gold, mercury and lead. Note. The test range can be extended to elements with atomic numbers 11 (Na) to 92 (U) under certain conditions, depending on the X-ray source provided by the test equipment.2 Normative referencesThe contents of the following documents constitute essential clauses of this document through normative references in this document. For referenced documents without a date, only the version corresponding to that date applies to this document; for referenced documents without a date, the latest version (including all amendments) applies to This document. GB/T 8979-2008 Pure nitrogen, high purity nitrogen and ultra-pure nitrogen GB/T 14264 Terminology of Semiconductor Materials GB/T 25915.1-2021 Clean rooms and related controlled environments Part 1.Classification of air cleanliness levels according to particle concentration3 Terms and definitionsThe terms and definitions defined in GB/T 14264 and the following apply to this document. 3.1 Total reflection When light is emitted from a denser medium to a less dense medium, when the incident angle exceeds the critical angle, the refracted light disappears completely and only the reflected light remains. Note. For X-rays, solids are generally less optically dense than air. 3.2 glancing angle The angle between the sample surface plane and the virtual plane containing the X-rays incident on the sample surface. Note. When this method is incident on the wafer surface at a small grazing angle, the X-rays will be totally reflected on the wafer surface, and the reflection angle is equal to the grazing angle. 3.3 critical angle The incident angle at which X-rays can produce total reflection. When the grazing angle is lower than this angle, the surface being measured will be completely reflected by the incident X-rays. reflection. Note. If the incident angle is small enough, the X-rays will not pass through the sample and will be reflected. The incident angle at the junction of the refraction angle and the reflection angle is called the critical angle. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 24578-2024_English be delivered?Answer: Upon your order, we will start to translate GB/T 24578-2024_English as soon as possible, and keep you informed of the progress. The lead time is typically 2 ~ 4 working days. 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Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.Question 5: Should I purchase the latest version GB/T 24578-2024?Answer: Yes. Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 24578-2024 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically. |
