GB/T 20176-2025 English PDF

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GB/T 20176-2025: Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
Status: Valid

GB/T 20176: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 20176-2025	444	Add to Cart	4 days	Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials	Valid
GB/T 20176-2006	394	Add to Cart	3 days	Surface chemical analysis -- Secondary-ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped materials	Valid

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Basic data

Standard ID: GB/T 20176-2025 (GB/T20176-2025)
Description (Translated English): Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: G04
Classification of International Standard: 71.040.40
Word Count Estimation: 22,261
Date of Issue: 2025-06-30
Date of Implementation: 2026-01-01
Older Standard (superseded by this standard): GB/T 20176-2006
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 20176-2025: Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials

---This is an excerpt. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.), auto-downloaded/delivered in 9 seconds, can be purchased online: https://www.ChineseStandard.net/PDF.aspx/GBT20176-2025
ICS 71.040.40 CCSG04 National Standard of the People's Republic of China Replaces GB/T 20176-2006 Surface chemical analysis secondary ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials (ISO 14237.2010, IDT) Released on June 30, 2025 Implementation on January 1, 2026 State Administration for Market Regulation The National Standardization Administration issued

Table of Contents

Preface III Introduction IV 1 Scope 1 2 Normative references 1 3 Principle 1 4 Reference materials 1 4.1 Primary reference materials 1 4.2 Secondary reference materials 1 5 Instruments 2 6 Sample 2 7 Step 2 7.1 Debugging of Secondary Ion Mass Spectrometer 2 7.2 Optimizing SIMS Instrument Settings 3 7.3 Injection 3 7.4 Measured Ions 3 7.5 Calibration 3 7.6 Measurement of specimens 5 8 Results presentation 5 8.1 Calculation method 5 8.2 Precision 6 9 Test Report 6 Appendix A (Informative) Determination of Carrier Concentration in Silicon Wafers 7 Appendix B (Informative) Measurement of Boron Isotope Ratios by SIMS 9 Appendix C (Normative) Instrument Performance Evaluation Procedure 12 Appendix D (Informative) Inter-laboratory Test Statistical Report 14 Reference 17 Preface This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents" Drafting. This document replaces GB/T 20176-2006 "Surface chemical analysis secondary ion mass spectrometry for the determination of boron in silicon using uniformly doped substances" Compared with GB/T 20176-2006, the main technical changes are as follows. --- Changed the test conditions for oxygen ion beam (see 7.1, 7.1 of the.2006 edition). This document is equivalent to ISO 14237.2010 “Surface chemical analysis - Determination of boron in silicon using uniformly doped materials using secondary ion mass spectrometry” Atomic Concentration. Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents. This document is proposed and coordinated by the National Technical Committee for Standardization of Surface Chemistry Analysis (SAC/TC608). This document was drafted by. Tsinghua University, China University of Geosciences (Beijing), China University of Mining and Technology (Beijing), China People's Public Security University, Beijing University, Sun Yat-sen University, and Institute of Materials, China Academy of Engineering Physics. The main drafters of this document are. Li Zhanping, Guo Chong, Wang Mengqin, Heping, Wang Fufang, Liu Zhaolun, Lang Yubo, Li Qin, Zhang Shuo, Liu Kexin, Wu Meixuan, Chen Jian, and Fu Xiaoguo. The previous versions of this document and the documents it replaces are as follows. ---GB/T 20176-2006; ---This is the first revision.

introduction

Developed to determine the degree. Quantitative analysis by SIMS requires reference materials. They are expensive and calibrated reference materials are only suitable for specific combinations of matrix and impurities. These reference materials are inevitably consumed in every SIMS measurement. Every laboratory can prepare secondary reference materials for calibration with standard reference materials, which are useful in routine analysis. This document describes a standard procedure for the quantitative analysis of boron in single crystal silicon using a secondary reference material that has been calibrated and implanted Calibration with boron reference material. Surface chemical analysis secondary ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials 1 Scope This document details the determination of the atomic concentration of boron in single crystal silicon using a calibrated uniform dopant (calibrated using a boron-implanted reference material). The secondary ion mass spectrometry method is suitable for uniform boron doping with a concentration range of 1×1016 atoms/cm3 to 1×1020 atoms/cm3. 2 Normative references The contents of the following referenced documents constitute the essential provisions of this document through normative reference in the text. For referenced documents without a date, only the latest version (including all amendments) shall apply to this document. For use in this document. Note. GB/T 40109-2021 Surface chemical analysis - Boron depth profiling method in silicon by secondary ion mass spectrometry (ISO 17560.2014, IDT) ISO 18114 Surface chemical analysis Secondary ion mass spectrometry Determination of relative sensitivity factors (Sur- Note. GB/T 25186-2010 Surface chemical analysis secondary ion mass spectrometry - Determination of relative sensitivity factors by ion implantation reference materials (ISO 18114. 2003, IDT) 3 Principles The oxygen or cesium ion beam impinges on the sample surface and the emitted boron and silicon secondary ions are mass analyzed and detected. A uniformly doped secondary reference material (calibrated with the primary reference material by ion implantation) was used as the working reference material. 4 Reference materials 4.1 Primary reference materials The primary reference material is used to determine the atomic concentration of boron in the secondary reference material. The primary reference material should be a calibrated boron-doped silicon. 4.2 Secondary reference materials 4.2.1 Secondary reference materials are used to determine the atomic concentration of boron in each test sample. There should be at least one boron-doped and one non-boron-doped reference material. The material is used for routine analysis. It is recommended to use two other reference materials with different boron doping levels to determine the performance of the instrument (see Appendix C). ......

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