| GB/T 11297.7-1989 English PDFUS$809.00 · In stock Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 11297.7-1989: Test method for resistivity and Hall coefficient in InSb single crystals 
 Basic dataStandard ID: GB/T 11297.7-1989 (GB/T11297.7-1989)Description (Translated English): Test method for resistivity and Hall coefficient in InSb single crystals Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: L90 Classification of International Standard: 29.040.01 Word Count Estimation: 23,213 Date of Issue: 3/31/1989 Date of Implementation: 1/1/1990 Summary: This standard applies to the measurement of resistivity and Hall coefficient of rectangular and thin InSb monocrystalline samples. The standard sample used is from InSb single crystal prepared by cutting the electrode in contact is applied at a particular location, and the resistivity was measured by the Hall coefficient of the sample current method, and then calculating the carrier and the carrier concentration of the sample mobility. This standard applies to electrical resistivity lO ^ -3 ~ 10 ^ InSb single crystal sample of 2�� �� cm. |