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GB/T 11297.7-1989 English PDF

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GB/T 11297.7-1989: Test method for resistivity and Hall coefficient in InSb single crystals
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 11297.7-1989809 Add to Cart 4 days Test method for resistivity and Hall coefficient in InSb single crystals  

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Basic data

Standard ID: GB/T 11297.7-1989 (GB/T11297.7-1989)
Description (Translated English): Test method for resistivity and Hall coefficient in InSb single crystals
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L90
Classification of International Standard: 29.040.01
Word Count Estimation: 23,213
Date of Issue: 3/31/1989
Date of Implementation: 1/1/1990
Summary: This standard applies to the measurement of resistivity and Hall coefficient of rectangular and thin InSb monocrystalline samples. The standard sample used is from InSb single crystal prepared by cutting the electrode in contact is applied at a particular location, and the resistivity was measured by the Hall coefficient of the sample current method, and then calculating the carrier and the carrier concentration of the sample mobility. This standard applies to electrical resistivity lO ^ -3 ~ 10 ^ InSb single crystal sample of 2�� �� cm.
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