|
Std ID |
Description (Standard Title) |
Detail |
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SJ 1761-1981
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BCD-type C-cores for single-phase transformers
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SJ 1761-1981
|
|
SJ 176-1977
|
(Germanium detector diode detector test methods efficiency)
|
SJ 176-1977
|
|
SJ 1767-1981
|
Metallic bell cover for vacuum equipment--Nominal diameter
|
SJ 1767-1981
|
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SJ 1768-1981
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Metallic bell cover for vacuum equipment--Body case
|
SJ 1768-1981
|
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SJ 1769-1981
|
Metallic bell cover for vacuum equipment--Sealing head
|
SJ 1769-1981
|
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SJ 1770-1981
|
Metallic bell cover for vacuum equipment--Flange
|
SJ 1770-1981
|
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SJ 1771-1981
|
Metallic bell cover for vacuum equipment--Sealing collar
|
SJ 1771-1981
|
|
SJ 177-1977
|
(Test Method germanium detector diode frequency characteristics)
|
SJ 177-1977
|
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SJ 1772-1981
|
(Vacuum measurement gauge fittings)
|
SJ 1772-1981
|
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SJ 1773-1981
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(Can bake vacuum measurement gauge fittings)
|
SJ 1773-1981
|
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SJ 1774-1981
|
Observation window for vacuum equipment
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SJ 1774-1981
|
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SJ 1775-1981
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Cermet-sealed electrodes
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SJ 1775-1981
|
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SJ 1776-1981
|
(CK-100 ~ 600 ultra-high vacuum diffusion pump oil metal structure type and parameters Series)
|
SJ 1776-1981
|
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SJ 1777-1981
|
(CK-100 ~ 600 ultra-high vacuum metal oil diffusion pump. Technical conditions)
|
SJ 1777-1981
|
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SJ 1778-1981
|
(Test methods CK-100 ~ 600 ultra-high vacuum metal oil diffusion pump.)
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SJ 1778-1981
|
|
SJ 1779-1981
|
Ordinary two-electrode sputtering ion pump--Parameters series
|
SJ 1779-1981
|
|
SJ 1780-1981
|
Ordinary two-electrode sputtering ion pump--Performance specification
|
SJ 1780-1981
|
|
SJ 1781-1981
|
Sputtering ion pump--Testing methods
|
SJ 1781-1981
|
|
SJ 178-1977
|
(Germanium detector test methods and switching diode capacitance)
|
SJ 178-1977
|
|
SJ 1782-1981
|
(Chinese Industry Standard)
|
SJ 1782-1981
|
|
SJ 1783-1981
|
Specification for electrical vacuum ceramic parts
|
SJ 1783-1981
|
|
SJ 1784-1981
|
Detail specification for silicon single phase bridge rectifiers, Type QL1-9 and QL21-28
|
SJ 1784-1981
|
|
SJ 1785-1981
|
General procedures of measurement for silicon single phase bridge rectifiers, up to 5A
|
SJ 1785-1981
|
|
SJ 1786-1981
|
Method of measurement for forward voltage of silicon single phase bridge rectifiers, up to 5A
|
SJ 1786-1981
|
|
SJ 1787-1981
|
Method of measurement for rated peak working reverse voltage and reverse current of silicon single phase bridge rectifiers, up to 5A
|
SJ 1787-1981
|
|
SJ 1788-1981
|
Method of measurement for operational junction temperature of silicon single phase bridge rectifiers, up to 5A
|
SJ 1788-1981
|
|
SJ 1789-1981
|
Method of measurement for maximum operational frequency of silicon single phase bridge rectifiers, up to 5A
|
SJ 1789-1981
|
|
SJ 1790-1981
|
Method of measurement for overload current multiplication factor of silicon single phase bridge rectifiers, up to 5A
|
SJ 1790-1981
|
|
SJ 1791-1981
|
Method of measurement for insulation robustness of silicon single phase bridge rectifiers, up to 5A
|
SJ 1791-1981
|
|
SJ 179-1977
|
(0: 00 germanium detector and switching diode junction capacitance of the test method)
|
SJ 179-1977
|
|
SJ 1794-1981
|
General specification for diffusion furnace for semiconductor device manufacturing
|
SJ 1794-1981
|
|
SJ 1795-1981
|
Detail specification for 50-1000mA low current thyristors
|
SJ 1795-1981
|
|
SJ 180-1977
|
(Test Method germanium detector diode surge current)
|
SJ 180-1977
|
|
SJ 1802-1981
|
Electronic tubes, Type FU-113Z (F)
|
SJ 1802-1981
|
|
SJ 1804-1981
|
Detail specification for silicon tuning variable capacitance diodes, Type 2CC101~104, 2CC201~204, 2CC301~304, 2CC401~404
|
SJ 1804-1981
|
|
SJ 1805-1981
|
Detail specification for silicon frequency modulated variable capacitance diodes, Type 2CC126
|
SJ 1805-1981
|
|
SJ 1806-1981
|
Detail specification for silicon band switching varialbe capacitance diodes, Type 2CC110, 2CC210, 2CC310, 2CC410, 2CC130
|
SJ 1806-1981
|
|
SJ 1807-1981
|
Detail specification for silicon tuning variable capacitance diodes, for Type 2CC120, 2CC122 and 2CC124; 2CC220, 2CC222 and 2CC224; 2CC320, 2CC322, 2CC324; 2CC420, 2CC422 and 2CC424
|
SJ 1807-1981
|
|
SJ 1819-1981
|
Preferred series--Module, number of teeth, face width and diameter of datum apperture for fine-pitch gears
|
SJ 1819-1981
|
|
SJ 1820-1981
|
Preferred fine-pitch spur gears
|
SJ 1820-1981
|
|
SJ 1821-1981
|
Preferred thin plated fine-pitch spur gears
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SJ 1821-1981
|
|
SJ 1822-1981
|
Preferred fine-pitch straight bevel gears
|
SJ 1822-1981
|
|
SJ 1823-1981
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Preferred double thin plate fine-pitch spur gears (Provisional)
|
SJ 1823-1981
|
|
SJ 1824-1981
|
Preferred structure and size for fine-pitch cylindrical worm wheel and worm
|
SJ 1824-1981
|
|
SJ 1825-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK21
|
SJ 1825-1981
|
|
SJ 1826-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK100
|
SJ 1826-1981
|
|
SJ 1827-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK6
|
SJ 1827-1981
|
|
SJ 1828-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK53
|
SJ 1828-1981
|
|
SJ 1829-1981
|
Detail specification silicon NPN epitaxial planar low power switching transistors, Type 3DK5
|
SJ 1829-1981
|
|
SJ 1830-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK101
|
SJ 1830-1981
|
|
SJ 1831-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK28
|
SJ 1831-1981
|
|
SJ 1832-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK102
|
SJ 1832-1981
|
|
SJ 1833-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK103
|
SJ 1833-1981
|
|
SJ 1834-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK104
|
SJ 1834-1981
|
|
SJ 1835-1981
|
(3DK105 type NPN silicon epitaxial planar low power switching transistor)
|
SJ 1835-1981
|
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SJ 1836-1981
|
(3DK106 type NPN silicon epitaxial planar low power switching transistor)
|
SJ 1836-1981
|
|
SJ 1837-1981
|
(3DK107 type NPN silicon epitaxial planar low power switching transistor)
|
SJ 1837-1981
|
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SJ 1838-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK29
|
SJ 1838-1981
|
|
SJ 1839-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK108
|
SJ 1839-1981
|
|
SJ 1840-1981
|
Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK14
|
SJ 1840-1981
|
|
SJ 1841-1981
|
Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK100
|
SJ 1841-1981
|
|
SJ 1842-1981
|
Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK110
|
SJ 1842-1981
|
|
SJ 1843-1981
|
Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK111
|
SJ 1843-1981
|
|
SJ 1844-1981
|
Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK112
|
SJ 1844-1981
|
|
SJ 1845-1981
|
Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK113
|
SJ 1845-1981
|
|
SJ 1846-1981
|
Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK120
|
SJ 1846-1981
|
|
SJ 1847-1981
|
Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK121
|
SJ 1847-1981
|
|
SJ 1848-1981
|
Detail specification for silicon PNP epitaxial planar low power switching transistors, Type 3CK130
|
SJ 1848-1981
|
|
SJ 1851-1981
|
(Crystal oscillator test methods)
|
SJ 1851-1981
|
|
SJ 1852-1981
|
Terms for quartz crystal controlled oscillators
|
SJ 1852-1981
|
|
SJ 1856-1981
|
(Electronic ceramic materials alumina impurity atom absorption spectrophotometry)
|
SJ 1856-1981
|
|
SJ 1860-1981
|
Measurement of AM-PM conversion coefficient of power klystrons
|
SJ 1860-1981
|
|
SJ 1861-1981
|
Fluorescent character indicator tubes, Type YS9-3
|
SJ 1861-1981
|
|
SJ 1862-1981
|
Fluorescent character indicator tubes, Type YS13-3
|
SJ 1862-1981
|
|
SJ 1863-1981
|
(YS18-3 digital fluorescent indicator tube)
|
SJ 1863-1981
|
|
SJ 1864-1981
|
(KND1 type Rocker Switch)
|
SJ 1864-1981
|
|
SJ 1865-1981
|
(KND2 type Rocker Switch)
|
SJ 1865-1981
|
|
SJ 1866-1981
|
Terminating posts, Type TZ
|
SJ 1866-1981
|
|
SJ 1867-1981
|
Socket of LC type and WC type for inspecition purpose
|
SJ 1867-1981
|
|
SJ 1869-1981
|
Continuous wave power amplification klystrons, Type KF-115
|
SJ 1869-1981
|
|
SJ 1871-1981
|
Measurement conditions for gas laser devices
|
SJ 1871-1981
|
|
SJ 1872-1981
|
Methods of measurement for firing voltage of gas laser devices
|
SJ 1872-1981
|
|
SJ 1873-1981
|
Methods of measurement for optimum working current of gas laser devices
|
SJ 1873-1981
|
|
SJ 1874-1981
|
Methods of measurement for tube voltage drop of gas laser devices
|
SJ 1874-1981
|
|
SJ 1875-1981
|
Methods of measurement for output power of gas laser devices
|
SJ 1875-1981
|
|
SJ 1876-1981
|
Methods of measurement for stability of output power for gas laser devices
|
SJ 1876-1981
|
|
SJ 1877-1981
|
Methods of measurement for excursion of beam direction of gas laser devices
|
SJ 1877-1981
|
|
SJ 1878-1981
|
Methods of discrimination for transverse mode of gas laser devices
|
SJ 1878-1981
|
|
SJ 1879-1981
|
Methods of measurement for angle of beam divergence of gas laser devices
|
SJ 1879-1981
|
|
SJ 1880-1981
|
Methods of measurement for frequency drift of gas laser devices
|
SJ 1880-1981
|
|
SJ 1881-1981
|
Methods of measurement for polarization of gas laser devices
|
SJ 1881-1981
|
|
SJ 1882-1981
|
General specification for variable air dielectric capacitors for use in radio receivers
|
SJ 1882-1981
|
|
SJ 1885-1981
|
Generic specification for compound dielectric capacitors
|
SJ 1885-1981
|
|
SJ 1886-1981
|
Marking content and method of thermistors
|
SJ 1886-1981
|
|
SJ 1887-1981
|
Major technical parameters for thermistors
|
SJ 1887-1981
|
|
SJ 1893-1981
|
General specification for sockets for electronic tubes and valves and crystal units
|
SJ 1893-1981
|
|
SJ 1894-1981
|
(GZC4-1 type ceramic tube socket legs)
|
SJ 1894-1981
|
|
SJ 1895-1981
|
(GZC4-1B-K-type legs ceramic header)
|
SJ 1895-1981
|
|
SJ 1896-1981
|
(GZC4-3A-K, GZS4-3A-K-type legs Headers)
|
SJ 1896-1981
|
|
SJ 1897-1981
|
(GZC4-3B-K-type legs ceramic header)
|
SJ 1897-1981
|