Std ID |
Description (Standard Title) |
Detail |
SJ 1631-1980
|
(CCW7 type circular plate-shaped tuning ceramic capacitors)
|
SJ 1631-1980
|
SJ 1632-1980
|
Type designation system for waveguide components
|
SJ 1632-1980
|
SJ 1635-1980
|
(Electronics industry pipeline regulations coloring)
|
SJ 1635-1980
|
SJ 1636-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD151 and 3DD152
|
SJ 1636-1980
|
SJ 1637-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD153 and 3DD154
|
SJ 1637-1980
|
SJ 1638-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD155 and 3DD156
|
SJ 1638-1980
|
SJ 1639-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD157 and 3DD158
|
SJ 1639-1980
|
SJ 1640-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD159, 3DD160 and 3DD161
|
SJ 1640-1980
|
SJ 1641-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD162 and 3DD163
|
SJ 1641-1980
|
SJ 1642-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD164, 3DD165 and 3DD166
|
SJ 1642-1980
|
SJ 1643-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD167, 3DD168 and 3DD169
|
SJ 1643-1980
|
SJ 1644-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD170, 3DD171 and 3DD172
|
SJ 1644-1980
|
SJ 1645-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD173 and 3DD174
|
SJ 1645-1980
|
SJ 1646-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD175 and 3DD176
|
SJ 1646-1980
|
SJ 1647-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD253 and 3D
|
SJ 1647-1980
|
SJ 1648-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD255 and 3DD256
|
SJ 1648-1980
|
SJ 1649-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD257 and 3DD258
|
SJ 1649-1980
|
SJ 1650-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD259, 3DD260 and 3DD261
|
SJ 1650-1980
|
SJ 1651-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD262 and 3DD263
|
SJ 1651-1980
|
SJ 1652-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD264, 3DD265 and 3DD266
|
SJ 1652-1980
|
SJ 1653-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD267, 3DD268 and 3DD269
|
SJ 1653-1980
|
SJ 1654-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD270, 3DD271 and 3Dd272
|
SJ 1654-1980
|
SJ 1655-1980
|
Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD275 and 3DD276
|
SJ 1655-1980
|
SJ 1656-1980
|
(Metal sealing ultrahigh vacuum flange structure type)
|
SJ 1656-1980
|
SJ 1657-1980
|
Ultragigh vacuum flanges with copper seal washer--Types and dimensions
|
SJ 1657-1980
|
SJ 1658-1980
|
(Copper ultrahigh vacuum sealing flange type and size series)
|
SJ 1658-1980
|
SJ 1659-1980
|
Copper seal washer--Types and dimensions
|
SJ 1659-1980
|
SJ 1660-1980
|
(Copper ring type and size of the columns line)
|
SJ 1660-1980
|
SJ 1661-1980
|
Heat treatment performance requirements for special equipment for electronic industry (Provsional)
|
SJ 1661-1980
|
SJ 1666-1980
|
Electronic tubes, Type FM-150
|
SJ 1666-1980
|
SJ 1667-1980
|
Electronic tubes, Type FM-12F
|
SJ 1667-1980
|
SJ 1668-1980
|
Electronic tubes, Type FM-110 and FM-110F
|
SJ 1668-1980
|
SJ 1669-1980
|
(Chinese Industry Standard)
|
SJ 1669-1980
|
SJ 1669-1981
|
Specification for wire MODEMs
|
SJ 1669-1981
|
SJ 1670-1980
|
Terminology for power supplies for use in electronic equipment
|
SJ 1670-1980
|
SJ 1671-1980
|
Specification for low voltage d. c. regulated power supply used in radar equipment
|
SJ 1671-1980
|
SJ 1672-1980
|
Detail specification for silicon NPN forward AGC high frequency low power transistors, Type 3DG253
|
SJ 1672-1980
|
SJ 1673-1980
|
Detail specification for silicon NPN forward AGC high frequency low power transistors, Type 3DG254
|
SJ 1673-1980
|
SJ 1674-1980
|
Detail specification for silicon NPN image intermediate frequency amplification end-use transistors, Type 3DG255
|
SJ 1674-1980
|
SJ 1676-1981
|
Electronic tubes, Type FU-824S (F)
|
SJ 1676-1981
|
SJ 1677-1980
|
Terminology for optical fibers and cables
|
SJ 1677-1980
|
SJ 1678-1980
|
Terminology for fiber optics connectors
|
SJ 1678-1980
|
SJ 1680-1980
|
(3DG150 high frequency low power silicon NPN transistor)
|
SJ 1680-1980
|
SJ 1681-1980
|
(3DA150 frequency power silicon NPN transistor)
|
SJ 1681-1980
|
SJ 1682-1980
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA151
|
SJ 1682-1980
|
SJ 1683-1980
|
Detail specification for silicon NPN high-frequency high power transistors, Type 3DA152
|
SJ 1683-1980
|
SJ 1684-1980
|
(3DD200 low-power silicon NPN transistor)
|
SJ 1684-1980
|
SJ 1685-1980
|
(3DD201 low-power silicon NPN transistor)
|
SJ 1685-1980
|
SJ 1686-1980
|
Detail specification for silicon NPN low-frequency high power transistors, Type 3DD202
|
SJ 1686-1980
|
SJ 1687-1980
|
(3DD203 low-power silicon NPN transistor)
|
SJ 1687-1980
|
SJ 1688-1980
|
(3DD204 low-power silicon NPN transistor)
|
SJ 1688-1980
|
SJ 1689-1980
|
Detail specification for silicon NPN low-frequency high power transistors, Type 3DD205
|
SJ 1689-1980
|
SJ 1690-1980
|
Detail specification for silicon NPN low-frequency high power transistors, Type 3DD206
|
SJ 1690-1980
|
SJ 1691-1980
|
(3DD207 low-power silicon NPN transistor)
|
SJ 1691-1980
|
SJ 1692-1980
|
Detail specification for silicon NPN low-frequency high power transistors, Type 3DD208
|
SJ 1692-1980
|
SJ 1693-1980
|
Detail specification for silicon PNP low-frequency high power transistors, Type 3AD150
|
SJ 1693-1980
|
SJ 1703-1981
|
Method of accelerated life test of low power electronic tubes
|
SJ 1703-1981
|
SJ 1704-1981
|
Generic specification for power klystrons
|
SJ 1704-1981
|
SJ 1705-1981
|
Measurement conditions of power klystrons
|
SJ 1705-1981
|
SJ 1706-1981
|
Measurement of electron-beam transmission efficiency of power klystrons
|
SJ 1706-1981
|
SJ 1707-1981
|
Measurement of gains of power klystrons
|
SJ 1707-1981
|
SJ 1708-1981
|
Measurement of bandwidth of power klystrons
|
SJ 1708-1981
|
SJ 1709-1981
|
Measurement of input power of power klystrons
|
SJ 1709-1981
|
SJ 1710-1981
|
Measurement of output power of power klystrons
|
SJ 1710-1981
|
SJ 1711-1981
|
Measurement of operating frequency range of power klystrons
|
SJ 1711-1981
|
SJ 171-1977
|
(Germanium detector and switching diode test - General)
|
SJ 171-1977
|
SJ 1712-1981
|
Measurement of resettability of power klystrons
|
SJ 1712-1981
|
SJ 1713-1981
|
Measurement of phaseshift of power klystrons
|
SJ 1713-1981
|
SJ 1714-1981
|
Measurement of intermodulation distortion ration of power klystrons
|
SJ 1714-1981
|
SJ 1715-1981
|
(Chinese Industry Standard)
|
SJ 1715-1981
|
SJ 1716-1981
|
Measurement of pulse characteristics of power klystrons
|
SJ 1716-1981
|
SJ 1717-1981
|
Measurement of pulse voltage of power klystrons
|
SJ 1717-1981
|
SJ 1718-1981
|
Measurement of cathode pulse current of power klystrons
|
SJ 1718-1981
|
SJ 1719-1981
|
Measurement of oscillation frequency of power klystrons
|
SJ 1719-1981
|
SJ 1720-1981
|
Measurement of spectrum of power klystrons
|
SJ 1720-1981
|
SJ 1721-1981
|
Measurement of frequency temperaturre coefficient of power klystrons
|
SJ 1721-1981
|
SJ 172-1977
|
(Germanium detector test methods and switching diode forward voltage drop)
|
SJ 172-1977
|
SJ 1722-1981
|
Pulsed magnetron, Type CKM-174~176
|
SJ 1722-1981
|
SJ 1723-1981
|
Gas-filled microwave switching tubes, Type RX-32
|
SJ 1723-1981
|
SJ 1724-1981
|
Gas-filled microwave switching tubes, Type RX-56
|
SJ 1724-1981
|
SJ 1725-1981
|
Gas-filled microwave switching tubes, Type RX-61
|
SJ 1725-1981
|
SJ 1726-1981
|
Gas-filled microwave switching tubes, Type RX-109
|
SJ 1726-1981
|
SJ 173-1977
|
(Germanium detector test methods and switching diode reverse current)
|
SJ 173-1977
|
SJ 1735-1981
|
Generic specification for communication acoustic devices
|
SJ 1735-1981
|
SJ 1737-1981
|
(Receiver Test method of electro-acoustic communication)
|
SJ 1737-1981
|
SJ 1738-1981
|
Acoustic test method for acoustic assemblies for use in communication
|
SJ 1738-1981
|
SJ 1739-1981
|
Outline dimension series for acoustic devices for use in communication
|
SJ 1739-1981
|
SJ 1741-1981
|
Type series of unsealed electromagnetic relays for use in electonic equipment
|
SJ 1741-1981
|
SJ 174-1977
|
(Germanium detector and switching diode breakdown voltage test method)
|
SJ 174-1977
|
SJ 1743-1981
|
X series small circular connectors
|
SJ 1743-1981
|
SJ 1744-1981
|
(Q-type small circular plug seat)
|
SJ 1744-1981
|
SJ 1746-1981
|
Specification for cabinet and case for electronic industry special equipment
|
SJ 1746-1981
|
SJ 1748-1981
|
U-cores made of magnetic oxide for Types UY12 and UY16
|
SJ 1748-1981
|
SJ 1749-1981
|
Type designation system for tuning fork and tablet resonators
|
SJ 1749-1981
|
SJ 1750-1981
|
Terms for tuning fork and tablet resonators
|
SJ 1750-1981
|
SJ 1751-1981
|
Nominal frequency series for tuning fork and tablet resonators
|
SJ 1751-1981
|
SJ 1752-1981
|
General specification for thumbwheel switches
|
SJ 1752-1981
|
SJ 1753-1981
|
Thumbwheel switches, Type KL1
|
SJ 1753-1981
|
SJ 1754-1981
|
Thumbwheel switches, Type KL3
|
SJ 1754-1981
|
SJ 1760-1981
|
BOD-type C-cores for single-phase transformers
|
SJ 1760-1981
|